IP Library › Granted Patent US 10,804,079
Granted Patent B2
US 10,804,079 · App. 16/544,769 · Granted Oct 13, 2020

Active showerhead

Inventors: Mariusch Gregor (Gilroy, CA); Thorsten Lill (Santa Clara, CA); David Trussell (Fremont, CA)
Assignee: Lam Research Corporation
H01J37/32449C23C16/4401C23C16/4404C23C16/45565C23C16/45574C23C16/45589C23C16/505C23C16/5096C23C16/52G01J3/50H01J37/32091H01J37/32183H01J37/32697H01J37/32715H01J37/32981H01L21/67069H01L21/67253
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Quick Facts
Patent No.
US 10,804,079
App. No.
16/544,769
Granted
Oct 13, 2020
Kind
B2
Abstract

An active showerhead used for a plasma reactor is described. The active showerhead includes a plurality of substrate layers. The substrate layers include at least one actuator and transfer component. The actuator and transfer component is coupled to a gas line via a gas channel. The active showerhead further includes an electrode layer located below the substrate layers. The electrode layer and the actuator and transfer component both share an opening. The actuator and transfer component allows passage of one or more process gases received from the gas line and the gas channel into the opening without the need for a conventional gas box.

Claims (56)

1. An active showerhead comprising:

a diaphragm layer having a plurality of portions, wherein the diaphragm layer has a top surface and a bottom surface, wherein the top surface is attached to a plurality of strain sensors, wherein each of the plurality of strain sensors is configured to measure an amount of strain in a corresponding one of the plurality of portions of the diaphragm layer;

a valve seat layer located below the diaphragm layer, wherein the valve seat layer includes a transfer channel and a gas passage;

a gas distribution layer located below the valve seat layer, wherein the gas distribution layer includes a transfer channel, a gas reception chamber, and a passage channel,

wherein the plurality of portions of the diaphragm layer are configured to move to allow passage of one or more process gases received from the passage channel via the gas reception chamber, the gas passage, and the transfer channel of the valve seat layer to the transfer channel of the gas distribution layer.

2. The active showerhead of claim 1 , wherein the plurality of portions of the diaphragm layer includes a first portion, a second portion, and a third portion, wherein the plurality of strain sensors include a first strain sensor and a second strain sensor, wherein the second portion is located between the first and third portions, wherein the first strain sensor is located above the first portion and the second strain sensor is located above the third portion.

3. An active showerhead comprising:

a diaphragm layer having a plurality of portions;

a valve seat layer located below the diaphragm layer, wherein the valve seat layer includes a transfer channel and a gas passage, wherein the valve seat layer includes a first portion, a second portion, a third portion, wherein the transfer channel of the valve seat layer is located between the first portion and the second portion and includes a filter, wherein the second portion is located between the transfer channel of the valve seat layer and the gas passage, and wherein the gas passage is located between the second portion and the third portion;

a gas distribution layer located below the valve seat layer, wherein the gas distribution layer includes a transfer channel, a gas reception chamber, and a passage channel,

wherein the plurality of portions of the diaphragm layer are configured to move to allow passage of one or more process gases received from the passage channel via the gas reception chamber, the gas passage, and the transfer channel of the valve seat layer to the transfer channel of the gas distribution layer.

4. The active showerhead of claim 1 , wherein the gas distribution layer includes a first portion and a second portion, wherein the transfer channel of the gas distribution layer is located between the first portion and the second portion, and wherein the gas reception chamber is a space formed within the second portion.

5. The active showerhead of claim 4 , wherein the valve seat layer has a bottom surface, wherein the second portion has a top surface, wherein the passage channel is located between the top surface of the second portion of the gas distribution layer and the bottom surface of the valve seat layer.

6. An active showerhead comprising:

a diaphragm layer having a plurality of portions;

a valve seat layer located below the diaphragm layer, wherein the valve seat layer includes a transfer channel and a gas passage;

a gas distribution layer located below the valve seat layer, wherein the gas distribution layer includes a transfer channel, a gas reception chamber, and a passage channel,

wherein the plurality of portions of the diaphragm layer are configured to move to allow passage of one or more process gases received from the passage channel via the gas reception chamber, the gas passage, and the transfer channel of the valve seat layer to the transfer channel of the gas distribution layer; and

a measurement layer located above the diaphragm layer, wherein the measurement layer includes an integrated metrology tool configured to measure a parameter associated with the one or more process gases.

7. The active showerhead of claim 6 , wherein the parameter includes a flow rate of the one or more process gases.

8. The active showerhead of claim 1 , further comprising a substrate support layer located above the diaphragm layer.

9. The active showerhead of claim 8 , further comprising:

a gas reservoir layer located above the substrate support layer; and

a measurement layer located above the gas reservoir layer, wherein the measurement layer includes an integrated metrology tool configured to measure a parameter associated with the one or more process gases.

10. An active showerhead comprising:

a diaphragm layer having a plurality of portions;

a valve seat layer located below the diaphragm layer, wherein the valve seat layer includes a transfer channel and a gas passage;

a gas distribution layer located below the valve seat layer, wherein the gas distribution layer includes a transfer channel, a gas reception chamber, and a passage channel,

wherein the plurality of portions of the diaphragm layer are configured to move to allow passage of one or more process gases received from the passage channel via the gas reception chamber, the gas passage, and the transfer channel of the valve seat layer to the transfer channel of the gas distribution layer; and

an actuator layer located above the diaphragm layer, wherein the actuator layer is attached to an actuator, wherein the actuator is configured to move to control movement of one of the plurality of portions of the diaphragm layer to further control passage of the one or more process gases from the gas passage to the transfer channel of the valve seat layer.

11. A plasma reactor comprising:

a chuck; and

an active showerhead located above the chuck to form a gap between the chuck and the active showerhead,

wherein the active showerhead includes:

a diaphragm layer having a plurality of portions, wherein the diaphragm layer has a top surface and a bottom surface, wherein the top surface is attached to a plurality of strain sensors, wherein each of the plurality of strain sensors is configured to measure an amount of strain in a corresponding one of the plurality of portions;

a valve seat layer located below the diaphragm layer, wherein the valve seat layer includes a transfer channel and a gas passage;

a gas distribution layer located below the valve seat layer, wherein the gas distribution layer includes a transfer channel, a gas reception chamber, and a passage channel,

wherein the plurality of portions of the diaphragm layer are configured to move to allow passage of one or more process gases received from the passage channel via the gas reception chamber, the gas passage, and the transfer channel of the valve seat layer to the transfer channel of the gas distribution layer; and

an upper electrode located below the gas distribution layer, wherein the upper electrode includes one or more openings to facilitate a transfer of the one or more process gases received from the transfer channel of the gas distribution layer to the gap.

12. The plasma reactor of claim 11 , wherein the plurality of portions of the diaphragm layer includes a first portion, a second portion, and a third portion, wherein the plurality of strain sensors include a first strain sensor and a second strain sensor, wherein the second portion is located between the first and third portions, wherein the first strain sensor is located above the first portion and the second strain sensor is located above the third portion.

13. The plasma reactor of claim 11 , wherein the valve seat layer includes a first portion, a second portion, a third portion, wherein the transfer channel of the valve seat layer is located between the first portion and the second portion, wherein the second portion is located between the transfer channel of the valve seat layer and the gas passage, and wherein the gas passage is located between the second portion and the third portion.

14. The plasma reactor of claim 13 , wherein the transfer channel of the valve seat layer includes a filter.

15. The plasma reactor of claim 11 , wherein the gas distribution layer includes a first portion and a second portion, wherein the transfer channel of the gas distribution layer is located between the first portion and the second portion, and wherein the gas reception chamber is a space formed within the second portion.

16. The plasma reactor of claim 15 , wherein the valve seat layer has a bottom surface, wherein the second portion has a top surface, wherein the passage channel is located between the top surface of the second portion of the gas distribution layer and the bottom surface of the valve seat layer.

17. The plasma reactor of claim 11 , wherein the active showerhead includes an actuator layer located above the diaphragm layer, wherein the actuator layer is attached to an actuator, wherein the actuator is configured to move to control movement of one of the plurality of portions of the diaphragm layer to further control passage of the one or more process gases from the gas passage to the transfer channel of the valve seat layer.

18. A plasma system comprising:

a radio frequency (RF) generator configured to generate an RF signal;

a match coupled to the RF generator and configured to modify the RF signal to output a modified RF signal;

a chuck coupled to the match, wherein the chuck is configured to receive the modified RF signal;

an active showerhead located above the chuck to form a gap between the chuck and the active showerhead,

wherein the active showerhead includes:

a diaphragm layer having a plurality of portions, wherein the diaphragm layer has a top surface and a bottom surface, wherein the top surface is attached to a plurality of strain sensors, wherein each of the plurality of strain sensors is configured to measure an amount of strain in a corresponding one of the plurality of portions;

a valve seat layer located below the diaphragm layer, wherein the valve seat layer includes a transfer channel and a gas passage;

a gas distribution layer located below the valve seat layer, wherein the gas distribution layer includes a transfer channel, a gas reception chamber, and a passage channel,

wherein the plurality of portions of the diaphragm layer are configured to move to allow passage of one or more process gases received from the passage channel via the gas reception chamber, the gas passage, and the transfer channel of the valve seat layer to the transfer channel of the gas distribution layer; and

an upper electrode located below the gas distribution layer, wherein the upper electrode includes one or more openings to facilitate a transfer of the one or more process gases received from the transfer channel of the gas distribution layer to the gap.

Continuity (2)
Continuation 15346920 · Nov 9, 2016
Related Publication 20190371573A1 · Dec 5, 2019
Cited By (1)
US 12,417,899