Methods of depositing SiCON with C, O and N compositional control
Methods of forming SiCON films comprising sequential exposure to a silicon precursor and a mixture of alkanolamine and amine reactants and an optional plasma are described. Methods of forming a silicon-containing film comprising sequential exposure to a silicon precursor and an epoxide with an optional plasma exposure are also described.
1. A method of depositing a silicon-containing film, the method comprising sequentially exposing a substrate surface to a silicon precursor and a reactant, the reactant comprising an epoxide having a structure represented by
where R is a C1-C10 alkyl, C1-C10 alkenyl, C1-C10 alkynyl, cycloalkyl with 1 to 10 carbons, ether or silane.
2. The method of claim 1 , wherein the silicon precursor comprises substantially no halogen atoms.
3. The method of claim 2 , wherein the silicon precursor comprises a silylamine.
4. The method of claim 1 , wherein the epoxide comprises
5. The method of claim 1 , wherein the epoxide has an oxygen to carbon atom ratio greater than 1:3.
6. The method of claim 1 , wherein the reactant comprises substantially no nitrogen atoms.
7. The method of claim 1 , further comprising repeating the sequential exposure of the substrate surface to the silicon precursor and the reactant to form the silicon-containing film having a predetermined thickness.
8. The method of claim 7 , further comprising exposing the silicon-containing film to a plasma between each successive exposure to the silicon precursor and the reactant.
9. The method of claim 8 wherein the plasma comprises argon and hydrogen.
10. The method of claim 9 , wherein the plasma comprises greater than or equal to about 5% hydrogen on a molecular basis.
11. The method of claim 9 , wherein the plasma comprises nitrogen and the silicon-containing film comprises SiCON.
12. The method of claim 1 , wherein the reactant further comprises a reactant plasma.
13. The method of claim 1 , wherein the silicon-containing film comprises greater than about 10% carbon on an atomic basis.
14. The method of claim 1 , wherein the silicon-containing film has a wet etch rate ratio of less than or equal to about 0.1 relative to thermal silicon oxide.
15. A method of depositing a silicon-containing film, the method comprising:
positioning a substrate having a surface in a processing chamber;
exposing the surface of the substrate to a silicon precursor comprising a silylamine and substantially no halogen atoms;
purging unreacted silicon precursor from the surface of the substrate;
exposing the surface of the substrate to a reactant comprising an epoxide and comprising substantially no nitrogen atoms to form the silicon-containing film, the epoxide having a structure represented by
where R is a C1-C10 alkyl, C1-C10 alkenyl, C1-C10 alkynyl, cycloalkyl with 1 to 10 carbons, ether or silane;
purging unreacted reactant from the surface of the substrate; and
repeating exposure to the silicon precursor, purging the unreacted silicon precursor, exposure to the reactant and purging the unreacted reactant to form the silicon-containing film having a thickness.
16. A method of depositing a silicon-containing film, the method comprising:
positioning a substrate having a surface in a first process region of a processing chamber;
exposing the surface of the substrate to a silicon precursor comprising a silylamine in the first process region;
laterally moving the substrate through a first gas curtain to a second process region of the processing chamber, the first gas curtain purging unreacted silicon precursor from the surface of the substrate;
exposing the surface of the substrate to a reactant in the second process region of the processing chamber to form the silicon-containing film, the reactant comprising an epoxide and having substantially no halogen or nitrogen atoms, the epoxide having a structure represented by
where each R is independently H, C1-C10 alkyl, C1-C10 alkenyl, C1-C10 alkynyl, cycloalkyl with 1 to 10 carbons, ether or silane, or
where R is a C1-C10 alkyl, C1-C10 alkenyl, C1-C10 alkynyl, cycloalkyl with 1 to 10 carbons, ether or silane, the reactant further comprising a reactant plasma comprising 25% H 2 in Ar on a molar basis;
laterally moving the substrate through a second gas curtain to a third process region of the processing chamber, the second gas curtain purging unreacted reactant from the surface of the substrate;
optionally exposing the surface of the substrate to a plasma in the third region of the processing chamber and laterally moving the substrate from the third region of the processing chamber through a third gas curtain, the plasma comprising argon with greater than or equal to about 5% hydrogen on a molecular basis; and
repeating exposure to the first process region, the second process region and, optionally, the third process region to grow the silicon-containing film having a thickness,
wherein the silicon-containing film comprises greater than about 10% carbon on an atomic basis and the silicon-containing film has a wet etch rate ratio of less than or equal to about 0.1 relative to thermal silicon oxide.