Semiconductor device and method of manufacturing the same
A method for manufacturing a semiconductor device is provided. A first vertical structure and a second vertical structure are formed on a substrate. The second vertical structure is positioned right next to the first vertical structure. The second vertical structure is positioned right next to the first vertical structure. An insulating layer is formed on the substrate between the first and second vertical structures. A gate metal and a gate dielectric layer, are formed on the first and second vertical structures. A portion of the gate metal, gate dielectric layer, and insulating layer is removed. A portion of the substrate is removed. The portion of the substrate is removed after the gate metal is formed on the first and second vertical structure.
1. A semiconductor device comprising:
a first transistor extending from a substrate, and including;
a first lower source/drain region formed on the substrate;
a first vertical channel formed on the first lower source/drain region; and
a first upper source/drain region formed on the first vertical channel;
a second transistor extending from the substrate, and including;
a second lower source/drain region formed on the substrate;
a second vertical channel formed on the second lower source/drain region; and
a second top source/drain region formed on the second vertical channel;
a first trench formed in a portion of the substrate between the first and second transistors, and filled with a first insulating material; and
a second trench formed in another portion of the substrate spaced apart from the first and second transistors, and filled with the first insulating material and a second insulating material different from the first insulating material,
wherein a height of the first insulating material is greater than a height of an upper surface of the substrate.
2. The semiconductor device of claim 1 ,
wherein the first insulating material includes one of a nitride or an oxide.
3. The semiconductor device of claim 1 ,
wherein a width of an upper portion of the first trench is the same as a gap between the first transistor and the second transistor.
4. The semiconductor device of claim 1 , further comprising:
a third transistor extending from the substrate, and including;
a third lower source/drain region formed on the substrate;
a third vertical channel formed on the third lower source/drain region; and
a third top source/drain region formed on the third vertical channel,
wherein the second trench is formed in the substrate between the second and third transistors.
5. The semiconductor device of claim 1 ,
wherein the first insulating material includes a nitride,
and the second insulating material includes an oxide.
6. The semiconductor device of claim 1 ,
wherein the first and second insulating materials include a layered structure.
7. The semiconductor device of claim 6 ,
wherein the layered structure includes a bottom layer including a nitride and an upper layer including an oxide.
8. The semiconductor device of claim 1 ,
wherein a depth of the first trench is the same as a depth of the second trench.
9. The semiconductor device of claim 1 ,
wherein the first trench has a first width, and
the second trench has a second width greater than the first width.
10. The semiconductor device of claim 9 ,
wherein the first insulating material fills the first trench and extends along the second trench, and
the second insulating material fills the second trench on the first insulating material.
11. A semiconductor device comprising:
a first transistor extending from a substrate, and including;
a first lower source/drain region formed on the substrate;
a first vertical channel formed on the first lower source/drain region; and
a first upper source/drain region formed on the first vertical channel;
a second transistor extending from the substrate, and including;
a second lower source/drain region formed on the substrate;
a second vertical channel formed on the second lower source/drain region; and
a second top source/drain region formed on the second vertical channel;
a first trench formed in a portion of the substrate between the first and second transistors, and having a first width;
a second trench formed in another portion of the substrate spaced apart from the first and second transistors, and having a second width greater than the first width;
a nitride layer that fills the first trench and extends along the second trench; and
an oxide layer that fills the second trench on the nitride layer,
wherein a height of the nitride layer is greater than a height of an upper surface of the substrate.
12. The semiconductor device of claim 11 ,
wherein a width of an upper portion of the first trench is the same as a gap between the first transistor and the second transistor.
13. The semiconductor device of claim 11 ,
wherein the bottom source/drain region includes silicon (Si), germanium (Ge), or silicon-germanium (SiGe).