Pixel structure and manufacturing method therefor
View Patent ↗The present disclosure provides a pixel structure for a CMOS image sensor and a manufacturing method therefor, the pixel structure comprising a photo diode and a source follow transistor, and an isolation strip is provided between the photo diode and the source follow transistor, and a contact hole is provided in a drain terminal of the source follow transistor, with the width of a part, corresponding to the contact hole portion, of a drain terminal active area of the source follow transistor being smaller than the width of the rest of the drain terminal active area, so that the width of a part, corresponding to the contact hole portion, of the isolation strip is greater than the width of a part, corresponding to the rest of the drain terminal active area, of the isolation strip.
1. A pixel structure for a CMOS image sensor, comprising:
a photo diode and a source follow transistor, wherein an isolation strip is provided between the photo diode and the source follow transistor, and a contact hole is provided in a drain terminal of the source follow transistor, with the width of a part, corresponding to the contact hole portion, of a drain terminal active area of the source follow transistor being smaller than the width of the rest of the drain terminal active area, so that the width of a part, corresponding to the contact hole portion, of the isolation strip is greater than the width of a part, corresponding to the rest of the drain terminal active area, of the isolation strip.
2. The pixel structure of claim 1 , wherein the drain terminal active area is of an hourglass shape.
3. The pixel structure of claim 1 , wherein the drain terminal active area is of an H-shape.
4. The pixel structure of claim 1 , wherein the width of the part, corresponding to the contact hole portion, of the drain terminal active area is in a range of 0.12-0.18 um, and the width of the rest of the drain terminal active area is in a range of 0.16-0.24 um.
5. The pixel structure of claim 4 , wherein the width of the rest of the drain terminal active area is 0.22 um.
6. The pixel structure of claim 1 , wherein the width of the part, corresponding to the contact hole portion, of the isolation strip is in a range of 0.13-0.16 um, and the width of the part, corresponding to the rest of the drain terminal active area, of the isolation strip is in a range of 0.11-0.14 um.
7. The pixel structure of claim 6 , wherein the width of the part, corresponding to the rest of the drain terminal active area, of the isolation strip is 0.11 um.
8. The pixel structure of claim 1 , wherein the distance between the contact hole and the boundary of the drain terminal active area is in a range of 0.015-0.045 um.
9. The pixel structure of claim 1 , further comprising a reset transistor, wherein the drain terminal active area is between the gate of the reset transistor and the gate of the source follow transistor, and the length of the rest of the drain terminal active area is in a range of 0.2-0.4 um.
10. The pixel structure of claim 9 , wherein the length of the rest of the drain terminal active area is 0.2 um.
11. The pixel structure of claim 9 , further comprising a row select transistor and a transfer transistor, wherein the width of a device active area of each of the reset transistor, the row select transistor, and the transfer transistor is consistent with the width of the rest of the drain terminal active area.
12. The pixel structure of claim 1 , wherein the isolation strip comprises a shallow trench isolation.
13. A CMOS image sensor comprising:
a pixel structure for a CMOS image sensor, comprising:
a photo diode and a source follow transistor, wherein an isolation strip is provided between the photo diode and the source follow transistor, and a contact hole is provided in a drain terminal of the source follow transistor, with the width of a part, corresponding to the contact hole portion, of a drain terminal active area of the source follow transistor being smaller than the width of the rest of the drain terminal active area, so that the width of a part, corresponding to the contact hole portion, of the isolation strip is greater than the width of a part, corresponding to the rest of the drain terminal active area, of the isolation strip.
14. A manufacturing method for a pixel structure, wherein the pixel structure is used for a CMOS image sensor, the manufacturing method comprising:
providing a substrate;
forming an isolation strip in the substrate to define an active area of a photo diode and an active area of a source follow transistor of the pixel structure separated by the isolation strip; and
forming the photo diode and the source follow transistor on the active areas, wherein
the width of a part, corresponding to a contact hole portion in a drain terminal active area of the source follow transistor, of the isolation strip is greater than the width of a part, corresponding to the rest of the drain terminal active area of the source follow transistor, of the isolation strip, so that the width of a part, corresponding to the contact hole portion, of the drain terminal active area of the source follow transistor is smaller than the width of the rest of the drain terminal active area of the source follow transistor.
15. The manufacturing method of claim 14 , wherein the isolation strip is formed to define the drain terminal active area of the source follow transistor to be of an hourglass shape.
16. The manufacturing method of claim 14 , wherein the isolation strip is formed to define the drain terminal active area of the source follow transistor to be of an H-shape.
17. The manufacturing method of claim 14 , wherein the isolation strip is formed by means of a shallow trench isolation process.