Method for manufacturing light-emitting device
An object of one embodiment of the present invention is to provide a more convenient highly reliable light-emitting device which can be used for a variety of applications. Another object of one embodiment of the present invention is to manufacture, without complicating the process, a highly reliable light-emitting device having a shape suitable for its intended purpose. In a manufacturing process of a light-emitting device, a light-emitting panel is manufactured which is at least partly curved by processing the shape to be molded after the manufacture of an electrode layer and/or an element layer, and a protective film covering a surface of the light-emitting panel which is at least partly curved is formed, so that a light-emitting device using the light-emitting panel has a more useful function and higher reliability.
1. A light-emitting device comprising:
a light-emitting panel having a shape at least partly curved; and
a protective film continuously covering an entire surface of the light-emitting panel so that the light-emitting panel is positioned between a first part of the protective film and a second part of the protective film,
wherein the entire surface of the light-emitting panel is covered with only the protective film.
2. The light-emitting device according to claim 1 ,
wherein the light-emitting panel further comprises a first sealing member, an element layer, a light-emitting element, and a second sealing member,
wherein the element layer and the light-emitting element are between the first sealing member and the second sealing member.
3. The light-emitting device according to claim 2 ,
wherein the protective film is in contact with the first sealing member and the second sealing member.
4. The light-emitting device according to claim 1 ,
wherein the light-emitting panel comprises an element layer having a shape at least partly curved.
5. The light-emitting device according to claim 1 ,
wherein the light-emitting panel comprises a transistor, and
wherein the transistor comprises an oxide semiconductor layer in a channel formation region.
6. The light-emitting device according to claim 1 , further comprising a supporting member in contact with an outer side surface or an inner side surface of the light-emitting panel,
wherein the supporting member maintains the shape of the light-emitting panel.
7. The light-emitting device according to claim 1 , further comprising a supporting member in contact with the protective film to cover an outer side surface or an inner side surface of the light-emitting panel,
wherein the supporting member maintains the shape of the light-emitting panel.
8. The light-emitting device according to claim 1 , wherein the protective film comprises an inorganic material.
9. The light-emitting device according to claim 1 , wherein the protective film comprises silicon nitride.
10. The light-emitting device according to claim 1 , wherein each of the first part of the protective film and the second part of the protective film comprises the same material.
11. A light-emitting device comprising:
a light-emitting panel having a shape at least partly curved; and
a protective film continuously covering a side surface, an outer side surface and an inner side surface of the light-emitting panel so that the light-emitting panel is positioned between a first part of the protective film and a second part of the protective film,
wherein the outer side surface and the inner side surface of the light-emitting panel is covered with only the protective film.
12. The light-emitting device according to claim 11 ,
wherein the light-emitting panel further comprises a first sealing member, an element layer, a light-emitting element, and a second sealing member,
wherein the element layer and the light-emitting element are between the first sealing member and the second sealing member.
13. The light-emitting device according to claim 12 ,
wherein the protective film is in contact with the first sealing member and the second sealing member.
14. The light-emitting device according to claim 11 ,
wherein the light-emitting panel comprises an element layer having a shape at least partly curved.
15. The light-emitting device according to claim 11 ,
wherein the light-emitting panel comprises a transistor, and
wherein the transistor comprises an oxide semiconductor layer in a channel formation region.
16. The light-emitting device according to claim 11 , further comprising a supporting member in contact with the outer side surface or the inner side surface of the light-emitting panel,
wherein the supporting member maintains the shape of the light-emitting panel.
17. The light-emitting device according to claim 11 , further comprising a supporting member in contact with the protective film to cover the outer side surface or the inner side surface of the light-emitting panel,
wherein the supporting member maintains the shape of the light-emitting panel.
18. The light-emitting device according to claim 11 , wherein the protective film comprises an inorganic material.
19. The light-emitting device according to claim 11 , wherein the protective film comprises silicon nitride.
20. The light-emitting device according to claim 11 , wherein each of the first part of the protective film and the second part of the protective film comprises the same material.
21. A light-emitting device comprising:
a light-emitting panel having a shape at least partly curved: and
a protective film continuously encapsulating the light-emitting panel so that the light-emitting panel is positioned between a first part of the protective film and a second part of the protective film.
22. The light-emitting device according to claim 21 ,
wherein the light-emitting panel further comprises a first sealing member, an element layer, a light-emitting element, and a second sealing member,
wherein the element layer and the light-emitting element are between the first sealing member and the second sealing member.
23. The light-emitting device according to claim 22 ,
wherein the protective film is in contact with the first sealing member and the second sealing member.
24. The light-emitting device according to claim 21 ,
wherein the light-emitting panel comprises an element layer having a shape at least partly curved.
25. The light-emitting device according to claim 21 ,
wherein the light-emitting panel comprises a transistor, and
wherein the transistor comprises an oxide semiconductor layer in a channel formation region.
26. The light-emitting device according to claim 21 , further comprising a supporting member in contact with an outer side surface or an inner side surface of the light-emitting panel,
wherein the supporting member maintains the shape of the light-emitting panel.
27. The light-emitting device according to claim 21 , further comprising a supporting member in contact with the protective film to cover an outer side surface or an inner side surface of the light-emitting panel,
wherein the supporting member maintains the shape of the light-emitting panel.
28. The light-emitting device according to claim 21 , wherein the protective film comprises an inorganic material.
29. The light-emitting device according to claim 21 , wherein the protective film comprises silicon nitride.
30. The light-emitting device according to claim 21 , wherein each of the first part of the protective film and the second part of the protective film comprises the same material.