Semiconductor package and method of manufacturing the same

1. A semiconductor package, comprising:

a heat dissipation component comprising a concave portion;

at least one semiconductor device disposed in the concave portion of the heat dissipation component;

an encapsulating material filling the concave portion and encapsulating the at least one semiconductor device; and

a redistribution structure disposed on the heat dissipation component, the at least one semiconductor device, and the encapsulating material, wherein the redistribution structure is electrically connected to the semiconductor device.

2. The semiconductor package as claimed in claim 1 , wherein the heat dissipation component further comprising an extending portion connected to the concave portion, wherein the extending portion of the heat dissipation component is thermally coupled to the redistribution structure.

3. The semiconductor package as claimed in claim 1 , wherein the extending portion of the heat dissipation component is in contact with the redistribution structure.

4. The semiconductor package as claimed in claim 3 , wherein the extending portion of the heat dissipation component comprises a surface in contact with the redistribution structure, and the surface of the extending portion is substantially level with a surface of the encapsulating material.

5. The semiconductor package as claimed in claim 3 , wherein the extending portion of the heat dissipation component is in directly contact with an upmost redistribution circuit layer of the redistribution structure.

6. The semiconductor package as claimed in claim 1 , wherein the extending portion of the heat dissipation component is thermally coupled to the redistribution structure through an interface material encapsulated by the encapsulating material.

7. The semiconductor package as claimed in claim 6 , wherein the interface material comprises a surface in contact with the redistribution structure, and the surface of the interface material is substantially level with a surface of the encapsulating material.

8. The semiconductor package as claimed in claim 1 , wherein the concave portion of the heat dissipation component is thermally coupled to the at least one semiconductor device through an interface material.

9. The semiconductor package as claimed in claim 1 , wherein the heat dissipation component comprises cutouts penetrating the heat dissipation component.

10. The semiconductor package as claimed in claim 1 further comprising electrical connectors, wherein the electrical connectors are electrically connected to the at least one semiconductor device through the redistribution structure.

11. A method, comprising:

disposing at least one semiconductor device in a concave portion of a heat dissipation component;

encapsulating the at least one semiconductor device and filling the concave portion of the heat dissipation component with an encapsulating material; and

forming a redistribution structure over the encapsulating material and the heat dissipation component, wherein the redistribution structure is thermally coupled to the heat dissipation component and is electrically connected to the at least one semiconductor device.

12. The method as claimed in claim 11 , wherein the at least one semiconductor device is disposed in the concave portion of the heat dissipation component through an interface material between the concave portion and a back surface of the at least one semiconductor device.

13. The method as claimed in claim 11 , wherein the at least one semiconductor device comprises a first semiconductor device and at least one second semiconductor device, and disposing the at least one semiconductor device in the concave portion of the heat dissipation component comprises:

disposing the at least one second semiconductor device in the concave portion, wherein the at least one second semiconductor device comprises an active surface and conductive pillars disposed on the active surface; and

stacking the first semiconductor device on the active surface of the at least one second semiconductor device.

14. The method as claimed in claim 13 , wherein the at least one second semiconductor device comprises second semiconductor devices arranged in a side-by-side manner, and the first semiconductor device is stacked on the second semiconductor devices.

15. The method as claimed in claim 13 , wherein the first semiconductor device is stacked on the at least one second semiconductor device through an interface material between the at least one second semiconductor device and a back surface of the first semiconductor device.

16. A method, comprising:

disposing at least one semiconductor device on a redistribution structure;

covering the at least one semiconductor device and the redistribution structure with a heat dissipation component, the heat dissipation component comprising a concave portion for receiving the at least one semiconductor device; and

encapsulating the at least one semiconductor device and filling concave portion with an encapsulating material.

17. The method as claimed in claim 16 , wherein the heat dissipation component further comprises an extending portion connected to the concave portion, the extending portion of the heat dissipation component is thermally coupled to the redistribution structure through a first interface material, and the concave portion of the heat dissipation component is thermally coupled to a back surface of the at least one semiconductor device through a second interface material.

18. The method as claimed in claim 16 , wherein the at least one semiconductor device comprises a first semiconductor device and at least one second semiconductor device, and disposing the at least one semiconductor device on the redistribution structure comprises:

mounting the first semiconductor device on the redistribution structure through conductive bumps; and

stacking the at least one second semiconductor device on the first semiconductor device, wherein the at least one second semiconductor device comprises an active surface facing the redistribution structure and conductive pillars disposed on the active surface, and the conductive pillars are configured to be disposed on the redistribution structure.

19. The method as claimed in claim 18 , wherein the at least one second semiconductor device comprises second semiconductor devices arranged in a side-by-side manner.

20. The method as claimed in claim 16 , wherein the encapsulating material is formed by a molding process followed by a polishing process.