Array substrate having a convex structure
The present disclosure provides an array substrate and a method for manufacturing the same, a display apparatus. The array substrate includes a base substrate and a plurality of pixel units arranged on the base substrate, each of the pixel units includes a thin film transistor and an electroluminescent device, the thin film transistor and the electroluminescent device are successively arranged on the base substrate in a direction away from the base substrate, the electroluminescent device includes a first electrode, a light emitting layer and a second electrode which are successively arranged in the direction away from the base substrate, the first electrode includes a reflective material, a convex structure is provided between first electrodes of any two adjacent electroluminescent devices, and the first electrodes of the electroluminescent devices extend to side walls of the convex structure, respectively.
1. An array substrate, comprising a base substrate and a plurality of pixel units arranged on the base substrate, wherein
each of the pixel units comprises a thin film transistor and an electroluminescent device, the thin film transistor and the electroluminescent device are successively arranged on the base substrate in a direction away from the base substrate, the electroluminescent device comprises a first electrode, a light emitting layer and a second electrode which are successively arranged in the direction away from the base substrate, and the first electrode comprises a reflective material, and
a convex structure is provided between first electrodes of any two adjacent electroluminescent devices, and the first electrodes of the electroluminescent devices extend to side walls of the convex structure, respectively, and
the first electrode of the electroluminescent device is provided above the thin film transistor, an interlayer insulation layer is provided between the first electrode of the electroluminescent device and the thin film transistor, the interlayer insulation layer comprises a planarization layer, the convex structure and the planarization layer are formed by a single layer and the convex structure is provided on the interlayer insulation layer.
2. The array substrate of claim 1 , wherein the interlayer insulation layer further comprises a passivation layer formed between the thin film transistor and the planarization layer.
3. The array substrate of claim 1 , wherein in each of the pixel units, the first electrode of the electroluminescent device is connected to the thin film transistor through a via hole penetrating through the interlayer insulation layer.
4. The array substrate of claim 1 , wherein an end of the convex structure proximal to the base substrate is wider than an end of the convex structure distal to the base substrate, and the side walls of the convex structure are inclined.
5. The array substrate of claim 4 , wherein a portion of the first electrode of the electroluminescent device which extends to the side wall of the convex structure is conformal to the side wall of the convex structure.
6. A display device, comprising the array substrate of claim 1 .
7. A method for manufacturing an array substrate, wherein the array substrate comprises a plurality of pixel units, and each of the pixel units comprises a thin film transistor and an electroluminescent device, and
the method comprises steps of:
forming the thin film transistor on a base substrate;
forming an interlayer insulation layer including a planarization layer and a convex structure above the thin film transistor such that the planarization layer and the convex structure are formed by a single patterning process with a same material, and the convex structure is formed on the interlayer insulation layer;
forming a first electrode comprising a reflective material, a light emitting layer and a second electrode of the electroluminescent device successively above the interlayer insulation layer such that the convex structure is formed between first electrodes of any two adjacent electroluminescent devices, and the first electrodes of the electroluminescent devices extend to side walls of the convex structure, respectively.
8. The method of claim 7 , wherein the step of forming the thin film transistor on the base substrate includes sub-steps of:
forming a pattern including an active layer of the thin film transistor on the base substrate by a patterning process;
depositing a gate insulation material layer and a gate metal layer successively above the active layer, and forming a pattern including a gate insulation layer and a gate of the thin film transistor by a patterning process;
forming an interlayer dielectric layer above the gate, and etching the interlayer dielectric layer to form a source contact hole and a drain contact hole in the interlayer dielectric layer;
forming a pattern including a source and a drain of each thin film transistor above the interlayer dielectric layer by a patterning process such that the source is connected to the active layer through the source contact hole, and the drain is connected to the active layer through the drain contact hole.
9. The method of claim 7 , wherein the step of forming the interlayer insulation layer comprises:
forming a passivation layer before forming the planarization layer.
10. The method of claim 7 , wherein the convex structure is formed so that an end of the convex structure proximal to the base substrate is wider than an end of the convex structure distal to the base substrate, and the side walls of the convex structure are inclined.
11. The method of claim 10 , wherein the first electrode of the electroluminescent device is formed so that a portion of the first electrode of the electroluminescent device which extends to the side wall of the convex structure is conformal to the side wall of the convex structure.