Organic light emitting display device
An organic light emitting display (OLED) device includes a substrate, a semiconductor element on the substrate, a planarization layer on the semiconductor, and a light emitting structure on the planarization layer. The planarization layer includes a contact hole exposing a portion of the semiconductor and a plurality of grooves surrounding the contact hole. The light emitting structure is electrically connected to the semiconductor element via the contact hole.
1. An organic light emitting display (OLED) device, comprising:
a substrate;
a semiconductor element on the substrate;
a planarization layer on the semiconductor element, the planarization layer including:
a contact hole exposing a portion of the semiconductor element; and
a plurality of grooves encircling the contact hole in plan view; and
a light emitting structure on the planarization layer, the light emitting structure being electrically connected to the semiconductor element via the contact hole, the light emitting structure including:
a lower electrode on the planarization layer electrically connected to the semiconductor element, the lower electrode, in plan view, overlapping at least one or more first grooves and not overlapping at least one or more second grooves.
2. The OLED device as claimed in claim 1 , wherein the grooves are spaced apart from the contact hole by a predetermined distance and are arranged along a shape of an outer portion of the contact hole.
3. The OLED device as claimed in claim 1 , wherein the grooves are spaced apart from each other.
4. The OLED device as claimed in claim 1 , wherein:
the grooves include first through (M)th grooves, where M is an integer greater than 1, and
(K)th and (K+1)th grooves among the first through (M)th grooves are spaced apart from each other, where K is an integer between 1 and M.
5. The OLED device as claimed in claim 1 , wherein the light emitting structure further includes:
a light emitting layer on the lower electrode; and
an upper electrode on the light emitting layer.
6. The OLED device as claimed in claim 5 , wherein
the lower electrode is electrically connected to the semiconductor element via the contact hole, and
the contact hole does not overlap the light emitting layer.
7. The OLED device as claimed in claim 6 , wherein the lower electrode includes:
a first trench overlapping the contact hole of the planarization layer; and
a second trench overlapping the grooves of the planarization layer.
8. The OLED device as claimed in claim 7 , wherein a size of the first trench is greater than a size of the second trench.
9. The OLED device as claimed in claim 5 , wherein:
the lower electrode is electrically connected to the semiconductor element via the contact hole, and
the contact hole overlaps the light emitting layer.
10. The OLED device as claimed in claim 9 , wherein the semiconductor element overlaps the light emitting layer.
11. The OLED device as claimed in claim 9 , wherein the lower electrode is located along a profile of an upper surface of the planarization layer and includes trenches that overlap a portion where each of the contact hole and the grooves of the planarization layer is located.
12. The OLED device as claimed in claim 9 , wherein the lower electrode includes:
a first trench overlapping the contact hole of the planarization layer; and
a second trench overlapping the grooves of the planarization layer.
13. The OLED device as claimed in claim 12 , wherein a size of the first trench is greater than a size of the second trench.
14. The OLED device as claimed in claim 12 , wherein the light emitting layer is located along a profile of an upper surface of the lower electrode and includes third and fourth trenches that overlap a portion where each of the first and second trenches of the lower electrode is located.
15. The OLED device as claimed in claim 1 , wherein the semiconductor element includes:
an active layer on the substrate;
a gate electrode on the active layer; and
source and drain electrodes on the gate electrode.
16. The OLED device as claimed in claim 15 , wherein:
the planarization layer exposes an upper surface of the drain electrode, and
the light emitting layer is in direct contact with the drain electrode.
17. The OLED device as claimed in claim 1 , further comprising:
a thin film encapsulation structure on the light emitting structure,
wherein the substrate and the thin film encapsulation structure have flexibility.
18. The OLED device as claimed in claim 17 , wherein the thin film encapsulation structure includes:
a first thin film encapsulation layer on the light emitting structure, the first thin film encapsulation layer including inorganic materials;
a second thin film encapsulation layer on the first thin film encapsulation layer, the second thin film encapsulation layer including organic materials; and
a third thin film encapsulation layer on the second thin film encapsulation layer, the third thin film encapsulation layer including the organic materials.
19. The OLED device as claimed in claim 1 , wherein:
the lower electrode is electrically connected to the semiconductor element via the contact hole;
the contact hole and one first groove are aligned in a first direction; and
the contact hole and one second groove are aligned in a second direction, the second direction being different from the first direction.
20. The OLED device as claimed in claim 1 , wherein:
the lower electrode is electrically connected to the semiconductor element via the contact hole;
the contact hole and two first grooves are aligned in a first direction; and
the contact hole and two second grooves are aligned in a second direction, the second direction being different from the first direction.