Method of manufacturing a semiconductor device and a semiconductor device
In a method of manufacturing a semiconductor device, a fin structure, in which first semiconductor layers and second semiconductor layers are alternately stacked, is formed. A sacrificial gate structure is formed over the fin structure. A source/drain region of the fin structure, which is not covered by the sacrificial gate structure, is etched, thereby forming a source/drain space. The first semiconductor layers are laterally etched through the source/drain space. An inner spacer made of a dielectric material is formed on an end of each of the etched first semiconductor layers. A source/drain epitaxial layer is formed in the source/drain space to cover the inner spacer. A lateral end of each of the first semiconductor layers has a V-shape cross section after the first semiconductor layers are laterally etched.
1. A method of manufacturing a semiconductor device, comprising:
forming a fin structure in which first semiconductor layers and second semiconductor layers are alternately stacked;
forming a sacrificial gate structure over the fin structure, wherein the sacrificial gate structure includes first and second hard mask layers disposed on a sacrificial gate electrode layer;
removing first semiconductor layers from a source/drain region of the fin structure, which is not covered by the sacrificial gate structure, thereby forming a source/drain space, wherein the second semiconductor layers remain in the source/drain space;
laterally etching the first semiconductor layers through the source/drain space;
forming an inner spacer made of a dielectric material on an end of each of the etched first semiconductor layers;
forming a source/drain epitaxial layer to wrap around the second semiconductor layers in the source/drain space and to cover the inner spacer; and
forming a source/drain contact layer in contact with the source/drain epitaxial layer that wraps around the second semiconductor layers,
wherein the inner spacer includes two layers having a first layer and a second layer formed on the first layer, and the first layer having a smaller thickness than the second layer.
2. The method of claim 1 , wherein the inner spacer is formed by:
forming a dielectric layer in the source/drain space; and
etching the dielectric layer, thereby leaving the inner spacer on the end of each of the etched first semiconductor layers remaining.
3. The method of claim 1 , further comprising, before the first semiconductors are laterally etched forming sidewall spacers on side faces of the sacrificial gate structure,
wherein sidewall spacers are made of a different material than the inner spacer.
4. The method of claim 3 , wherein the inner spacers include at least one of silicon nitride and silicon oxide.
5. The method of claim 4 , wherein the inner spacers include at least one of SiOC, SiOCN and SiCN.
6. The method of claim 1 , further comprising, after the source/drain epitaxial layer is formed:
removing the sacrificial gate structure, thereby exposing a part of the fin structure;
removing the first semiconductor layers from the exposed fin structure, thereby forming channel layers including the second semiconductor layers; and
forming a gate dielectric layer and a gate electrode layer around the channel layers,
wherein the gate electrode layer is isolated from the source/drain epitaxial layer by the inner spacer and the gate dielectric layer.
7. The method of claim 1 , wherein:
the first semiconductor layers are made of SiGe, and
the second semiconductor layers are made of Si.
8. The method of claim 1 , wherein:
the first semiconductor layers are made of Si, and
the second semiconductor layers are made of SiGe.
9. The method of claim 1 , wherein an end of the inner spacer opposite to the source/drain epitaxial layer is curved.
10. A method of manufacturing a semiconductor device, comprising:
forming a first fin structure and a second fin structure, in both which first semiconductor layers and second semiconductor layers are alternately stacked;
forming a first sacrificial gate structure over the first fin structure and a second sacrificial gate structure over the second fin structure;
while the second fin structure with the second sacrificial gate structure are protected,
etching a source/drain region of the first fin structure, which is not covered by the first sacrificial gate structure, thereby forming a first source/drain space;
laterally etching the first semiconductor layers in the first source/drain space;
forming a first inner spacer made of a dielectric material on an end of each of the etched first semiconductor layers; and
forming a first source/drain epitaxial layer in the first source/drain space to cover the inner spacer, thereby forming a first structure;
while the first structure is protected,
etching the second semiconductor layers in a source/drain region of the second fin structure, which is not covered by the second sacrificial gate structure, thereby forming a second source/drain space;
laterally etching the second semiconductor layers through the second source/drain space;
forming a second inner spacer made of a dielectric material on an end of each of the etched second semiconductor layers; and
forming a second source/drain epitaxial layer in the second source/drain space to cover the second inner spacer, thereby forming a second structure.
11. The method of claim 10 , wherein each of the first inner spacer and the second inner spacer includes two layers.
12. The method of claim 10 , further comprising, before the first semiconductors are laterally etched forming sidewall spacers on side faces of the sacrificial gate structure,
wherein sidewall spacers are made of a different material than the first inner spacer.
13. The method of claim 12 , wherein each of the first inner spacer and the second inner spacer includes at least one of silicon nitride and silicon oxide.
14. The method of claim 12 , wherein each of the first inner spacer and the second inner spacer includes at least one of SiOC, SiOCN and SiCN.
15. A semiconductor device, comprising:
semiconductor wires disposed over a substrate;
a source/drain epitaxial layer in contact with the semiconductor wires;
a gate dielectric layer disposed on and wrapping around each channel region of the semiconductor wires;
a gate electrode layer disposed on the gate dielectric layer and wrapping around the each channel region;
a gate sidewall spacer disposed on a side face of the gate electrode layer; and
insulating spacers each enclosed by adjacent semiconductor wires, the gate dielectric layer and the source/drain region,
wherein an additional insulating spacer is disposed between an uppermost one of the semiconductor wires and the gate sidewall spacer.
16. The semiconductor device of claim 15 , wherein each of the insulating spacers and the additional insulating spacer includes two layers.
17. The semiconductor device of claim 15 , wherein the insulating spacers and the additional insulating spacer include at least one of SiOC, SiOCN and SiCN.
18. The semiconductor device of claim 17 , wherein the gate sidewall spacer is made of a different material than the insulating spacers and the additional insulating spacer.
19. The semiconductor device of claim 15 , wherein an interface between the gate dielectric layer and each of the insulating spacers is curved.