Light emitting diode
A light emitting diode including: a columnar laminated structure 20 in which a first compound semiconductor layer 21 , a light emitting layer 23 , and a first portion 22 A of a second compound semiconductor layer are laminated; a first electrode 31 electrically connected to the first compound semiconductor layer 21 ; and a second electrode 32 . A second portion 22 B of the second compound semiconductor layer is formed on the first portion 22 A of the second compound semiconductor layer, apart from an edge portion 22 a 3 of the first portion 22 A of the second compound semiconductor layer, the second electrode 32 is formed at least on a top surface of the second portion 22 B of the second compound semiconductor layer, and light is outputted at least from the top surface 22 b 1 and a side surface 22 b 2 of the second portion 22 B of the second compound semiconductor layer.
1. A light emitting diode, comprising:
a columnar laminated structure that includes a first compound semiconductor layer, a light emitting layer, and a first portion of a second compound semiconductor layer, wherein
the light emitting layer comprises a compound semiconductor, and
the first compound semiconductor layer, the light emitting layer, and the first portion of the second compound semiconductor layer are laminated;
a first electrode electrically connected to the first compound semiconductor layer, wherein
the first electrode comprises a Bragg reflection structure,
the Bragg reflection structure is configured to reflect light which travel toward the first compound semiconductor layer,
a second portion of the second compound semiconductor layer is on an area of the first portion of the second compound semiconductor layer, and
the area of the first portion of the second compound semiconductor layer is different from an edge portion of the first portion of the second compound semiconductor layer;
a second electrode which is at least on a top surface of the second portion of the second compound semiconductor layer, wherein
the light is output at least from the top surface of the second portion of the second compound semiconductor layer and a side surface of the second portion of the second compound semiconductor layer, and
the second electrode includes a pad electrode on the side surface of the second portion of the second compound semiconductor layer; and
an insulating layer in contact with each of a top surface of the first portion of the second compound semiconductor layer, the top surface of the second portion of the second compound semiconductor layer, and a side wall of the columnar laminated structure.
2. The light emitting diode according to claim 1 , wherein the light is output to outside of the light emitting diode from a side of the second compound semiconductor layer.
3. The light emitting diode according to claim 1 , wherein
the second electrode is on an area of the top surface of the second portion, and
the area of the top surface is different from an edge portion of the top surface of the second portion.
4. The light emitting diode according to claim 1 , wherein
the second electrode includes a transparent conductive material,
the second electrode extends from the top surface of the second portion of the second compound semiconductor layer to the side surface of the second portion of the second compound semiconductor layer, and
the second electrode is on the insulating layer.
5. The light emitting diode according to claim 4 , wherein the first portion of the second compound semiconductor layer has a resistance increase effect structure.
6. The light emitting diode according to claim 1 , further comprising a light extraction enhancement effect structure on the top surface of the first portion of the second compound semiconductor layer.
7. The light emitting diode according to claim 1 , wherein
the first electrode is on an exposed part of the first compound semiconductor layer, and
the exposed part corresponds to a portion of a top surface of the first compound semiconductor layer.
8. The light emitting diode according to claim 4 , wherein the second electrode extends from the top surface of the second portion of the second compound semiconductor layer to the top surface of the first portion of the second compound semiconductor layer.
9. The light emitting diode according to claim 1 , further comprising a substrate between the first electrode and the first compound semiconductor layer.