Semiconductor device and method of manufacture
View Patent ↗A semiconductor device has a conductive via laterally separated from the semiconductor, an encapsulant between the semiconductor device and the conductive via, and a mark. The mark is formed from characters that are either cross-free characters or else have a overlap count of less than two. In another embodiment the mark is formed using a wobble scan methodology. By forming marks as described, defects from the marking process may be reduced or eliminated.
1. A semiconductor device comprising:
a layer of material over a semiconductor die, an encapsulant, and a via, wherein the via is laterally separated from and electrically connected to the semiconductor die; and
a plurality of laser beam pulse exposures within the layer of material, wherein the plurality of laser beam pulse exposures overlap each other to form a line with a plurality of depths, wherein the line has a width that is equal to a width of a single one of the plurality of laser beam pulse exposures, wherein each laser beam pulse exposure which overlaps the line is one of the plurality of laser beam pulse exposures, and wherein each of the plurality of depths within the line is less than 8.03 μm.
2. The semiconductor device of claim 1 , wherein the plurality of depths has a variation of about 1.16 μm.
3. The semiconductor device of claim 1 , wherein the plurality of depths is greater than 6.8 μm.
4. The semiconductor device of claim 1 , wherein the layer of material has a thickness that is between about 0.5 μm and about 10 μm.
5. The semiconductor device of claim 4 , wherein the layer of material has a thickness that is less than 5 μm.
6. The semiconductor device of claim 1 , wherein the plurality of laser beam pulse exposures has a pitch of between about 2 μm and about 70 μm.
7. The semiconductor device of claim 6 , wherein the pitch is less than 5.7 μm.
8. A semiconductor device comprising:
a via extending through an encapsulant and laterally separated from a semiconductor device;
a protective layer over the encapsulant and the via; and
a marking within the protective layer, the marking comprising:
a first line with a first longitudinal axis; and
a second line separated from the first line by a region of the protective layer, the second line having a second longitudinal axis intersecting the first longitudinal axis at a first location, wherein a maximum depth of the second line is located at a point that is removed from the first location.
9. The semiconductor device of claim 8 , wherein the via is separated from the semiconductor device by a first distance of between about 150 μm and about 1600 μm.
10. The semiconductor device of claim 9 , wherein the first distance is less than about 850 μm.
11. The semiconductor device of claim 10 , wherein the marking is located over a region covered by the first distance.
12. The semiconductor device of claim 8 , wherein the via is recessed within the encapsulant.
13. The semiconductor device of claim 12 , wherein the via is recessed a first depth of between about 0.05 μm and about 0.1 μm.
14. The semiconductor device of claim 8 , wherein the encapsulant has a thickness of less than or equal to about 200 μm.
15. A semiconductor device comprising:
external connectors adjacent to a redistribution layer;
a semiconductor device electrically connected to a through via by the redistribution layer;
an encapsulant surrounding the semiconductor device and the through via;
a protective layer over the semiconductor device and the encapsulant;
first openings through the protective layer to expose the through via; via, the protective layer having a first thickness; and
second openings in the protective layer, the second openings comprising a plurality of overlapping laser beam pulse exposures, wherein the plurality of overlapping laser beam pulse exposures forms a first line that has a width that is equal to a width of a single one of the plurality of overlapping laser beam pulse exposures, wherein the protective layer has the first thickness on a first side of a first one of the overlapping laser beam pulse exposures and has the first thickness on a second side of the first one of the overlapping laser beam pulse exposures opposite the first side, and wherein a pitch between adjacent overlapping laser beam pulse exposures is between about 2 μm and about 5.7 μm.
16. The semiconductor device of claim 15 , wherein the second openings in the protective layer have a deepest first depth that is less than a second depth of the protective layer.
17. The semiconductor device of claim 16 , wherein the deepest first depth is between about 2 μm and about 7.52 μm.
18. The semiconductor device of claim 15 , wherein the second openings in the protective layer have a total accumulated overlap of between about 100% and about 376%.
19. The semiconductor device of claim 15 , wherein a depth of the second openings in the protective layer varies between about 6.87 μm and about 8.03 μm.
20. The semiconductor device of claim 19 , wherein the depth of the second openings has a variation of about 1.16 μm.