Silicene electronic device
A silicene electronic device includes a silicene material layer. The silicene material layer of the silicene electronic device has a 2D honeycomb structure of silicon atoms, is doped with at least one material of Group I, Group II, Group XVI, and Group XVII, and includes at least one of a p-type dopant region doped with a p-type dopant and an n-type dopant region doped with an n-type dopant. An electrode material layer including a material having a work function lower than the electron affinity of silicene is formed on the silicene material layer.
1. A silicene electronic device comprising:
a silicene material layer having a two-dimensional (2D) honeycomb structure formed by silicon atoms, doped with at least one material of Group I, Group II, Group XVI, and Group XVII, and comprises at least one of a p-type dopant region doped with a p-type dopant and an n-type dopant region doped with an n-type dopant; and
an electrode material layer on the silicene material layer and includes a material having a work function lower than an electron affinity of silicene,
wherein the electrode material layer comprises an electride.
2. The silicene electronic device of claim 1 , wherein the electride comprises a C12A7 electride, a 2D electride, and a Y 5 Si 3 electride.
3. The silicene electronic device of claim 1 , further comprising an electrode material protection layer protecting the electrode material layer.
4. The silicene electronic device of claim 3 , wherein the electrode material protection layer covers an area greater than an area of the electrode material layer so that sides of the electrode material layer are not exposed to the outside of the electrode material protection layer.
5. The silicene electronic device of claim 1 , wherein the silicene material layer is entirely doped with at least one material of Group I, Group II, Group XVI, and Group XVII, and comprises one p-type dopant region and one n-type dopant region.
6. The silicene electronic device of claim 1 , wherein a doping concentration of the n-type dopant in the n-type dopant region is 10 12 ˜10 18 /cm 3 .
7. The silicene electronic device of claim 1 , wherein a doping concentration of the p-type dopant in the p-type dopant region is 10 12 ˜10 18 /cm 3 .
8. The silicene electronic device of claim 1 , wherein the silicene material layer comprises at least one p region doped with a p-type dopant and at least two n+ regions, doped with an n-type dopant on both sides of the at least one p region,
wherein a gate electrode having a width equal to or greater than a width of the at least one p region is on the at least one p region, and a source and a drain are on the at least two n+ regions.
9. The silicene electronic device of claim 8 , further comprising a lower intermediate layer on a lower surface of the silicene material layer.
10. The silicene electronic device of claim 9 , wherein the lower intermediate layer includes one of BN, SiO 2 , and SiN.
11. The silicene electronic device of claim 9 , further comprising a lower gate insulating layer and a lower gate electrode on a lower side of the silicene material layer.
12. The silicene electronic device of claim 11 , wherein the lower gate electrode has a width equal to or greater than a width corresponding to the at least two n+ region and the at least one p region of the silicene material layer.
13. A silicene electronic device comprising:
a silicene material layer having a two-dimensional (2D) honeycomb structure formed by silicon atoms, doped with at least one material of Group I, Group II, Group XVI, and Group XVII, and comprises at least one of a p-type dopant region doped with a p-type dopant and an n-type dopant region doped with an n-type dopant; and
an electrode material layer on the silicene material layer and includes a material having a work function lower than an electron affinity of silicene, wherein the electrode material layer comprises at least one material selected from the group consisting of Ca, Y, La, and Er.
14. A silicene electronic device comprising:
a silicene material layer having a two-dimensional (2D) honeycomb structure formed by silicon atoms, doped with at least one material of Group I, Group II, Group XVI, and Group XVII, and comprises at least one of a p-type dopant region doped with a p-type dopant and an n-type dopant region doped with an n-type dopant;
an electrode material layer on the silicene material layer and includes a material having a work function lower than an electron affinity of silicene; and an intermediate layer between the silicene material layer and the electrode material layer.
15. The silicene electronic device of claim 14 , wherein the intermediate layer comprises a passivation layer or an insulating layer on a surface of the silicene material layer.
16. The silicene electronic device of claim 15 , wherein the passivation layer comprises Se or S.
17. The silicene electronic device of claim 15 , wherein the insulating layer comprises boron nitride (BN), SiO 2 , or SiN.
18. The silicene electronic device of claim 15 , wherein the insulating layer is on an entire upper surface of the silicene material layer.
19. The silicene electronic device of claim 15 , further comprising a graphene layer between the intermediate layer and the electrode material layer.