Multiple hole injection structure on oxidized aluminum and applications thereof in organic luminescent devices
View Patent ↗The present disclosure provides multilayered hole injection structures including one or more layers of oxides for application in an organic electroluminescent device. The layered structures include an insulating metal oxide such as Al 2 O 3 including a transition metal oxide to lower the hole injection barrier and enable hole transfer which is sandwiched between the conductive aluminum layer and a hole transport layer. The layered structure may also include a tri-layered structure stacked sequentially including a first electrically conductive layer, an insulating metal oxide and a hole injection layer material selected from a group of transition metal oxides.
1. A light-emitting device, comprising:
a) a substrate;
b) an anode comprising an aluminum metal layer on said substrate, said aluminum metal layer having a surface oxide layer with a thickness in a range from about 0.5 to about 4 nanometers;
c) a multiple layered hole injection structure comprising
a layer of a high work function reduced transition metal oxide material on top of said surface oxide layer;
a hole transport layer on top of said high work function reduced transition metal oxide material, wherein the high work function reduced transition metal oxide material creates an electrically conductive contact with the underlying aluminum metal layer to allow hole transfer from the aluminum metal layer to the hole transport layer through said surface oxide layer;
d) a layer of an electroluminescent material on said multiple layered hole injection structure;
e) an electrically conductive and optically transparent cathode layer on the said electroluminescent material; and
f) an electrical power supply to connect the said anode and cathode.
2. The light-emitting device according to claim 1 , further comprising an electron transport layer on top of said layer of an electroluminescent material sandwiched between said electroluminescent material and said an electrically conductive and optically transparent cathode layer.
3. The light-emitting device according to claim 2 , wherein said surface oxide layer on top of said aluminum layer is formed by exposing the aluminum layer to ambient environment.
4. The light-emitting device according to claim 2 , wherein said surface oxide layer on top of said aluminum layer is formed by exposing the aluminum layer to UV-ozone environment.
5. The light-emitting device according to claim 2 , wherein said surface oxide layer on top of said aluminum layer is formed by exposing the aluminum layer to an oxygen containing plasma.
6. The light-emitting device according to claim 2 , wherein said surface oxide layer on top of said aluminum layer is formed using chemical vapor deposition.
7. The light-emitting device according to claim 1 , wherein said surface oxide layer on top of said aluminum layer is formed by exposing the aluminum layer to ambient environment.
8. The light-emitting device according to claim 1 , wherein said surface oxide layer on top of said aluminum layer is formed by exposing the aluminum layer to UV-ozone environment.
9. The light-emitting device according to claim 1 , wherein said surface oxide layer on top of said aluminum layer is formed by exposing the aluminum layer to an oxygen containing plasma.
10. The light-emitting device according to claim 1 , wherein said surface oxide layer on top of said aluminum layer is formed using chemical vapor deposition.
11. The light-emitting device according to claim 1 , wherein said surface oxide layer on top of said aluminum layer contains nitrogen.
12. The light-emitting device according to claim 1 , wherein said layer of a high work function reduced transition metal oxide material has a work function larger than about 5 eV.
13. The metal oxides of claim 1 , wherein said layer of a high work function reduced transition metal oxide material is a layer of any one of MoO 3 , ReO 3 , and WO 3 .
14. The light-emitting device according to claim 1 , wherein said layer of a high work function reduced transition metal oxide material is a nitrogen containing compound with a work function greater than 5.2 eV.
15. The light-emitting device according to claim 14 , wherein said nitrogen containing compound is any one of TiN, poly(3, 4-ethylenedioxthiophene) polystyrene sulfonate (PEDOT:PSS), and poly(9-vinylcarbazole) (PVK).
16. The light-emitting device according to claim 1 , wherein said aluminum is selected from the group consisting of aluminum and aluminum-based compounds.
17. The light-emitting device according to claim 1 , wherein said aluminum is selected from the group consisting of Al, and AgAl, TiAl, and CuAl based alloys.