Power amplification circuit

1. A power amplification circuit comprising:

an amplifier that amplifies an input signal and outputs an amplified signal;

a first bias circuit that supplies a first bias current or voltage to the amplifier;

a second bias circuit that supplies a second bias current or voltage to the amplifier;

a first control circuit that controls a level of the first bias current or voltage; and

a second control circuit that controls a level of the second bias current or voltage;

wherein a current supplying capacity of the first bias circuit is different from a current supplying capacity of the second bias circuit,

wherein the first control circuit outputs a first current that controls the first bias current or voltage,

wherein the second control circuit outputs a second current that controls the second bias current or voltage,

wherein the first bias circuit comprises a first bipolar transistor that outputs the first bias current or voltage in accordance with the first current,

wherein the second bias circuit comprises a second bipolar transistor that outputs the second bias current or voltage in accordance with the second current,

wherein a size of the first bipolar transistor is different from a size of the second bipolar transistor,

wherein the first bias circuit further comprises a third transistor, and

wherein a collector of the third transistor is connected to a base of the first bipolar transistor, a base of the third transistor is connected to an emitter of the first bipolar transistor, the emitter of the third transistor is connected to ground, and the first current is supplied to the collector of the third transistor.

2. The power amplification circuit according to claim 1 ,

wherein the first bias circuit further comprises a first resistance element that is connected in series between an emitter of the first bipolar transistor and the amplifier,

wherein the second bias circuit further comprises a second resistance element that is connected in series between an emitter of the second bipolar transistor and the amplifier, and

wherein a resistance value of the first resistance element is different from a resistance value of the second resistance element.

3. The power amplification circuit according to claim 2 ,

wherein the second bias circuit further comprises a fourth transistor, and

wherein a collector of the fourth transistor is connected to a base of the second bipolar transistor, a base of the fourth transistor is connected to an emitter of the second bipolar transistor, the emitter of the fourth transistor is connected to ground, and the second current is supplied to the collector of the fourth transistor.

4. The power amplification circuit according to claim 1 ,

wherein the second bias circuit further comprises a fourth transistor, and

wherein a collector of the fourth transistor is connected to a base of the second bipolar transistor, a base of the fourth transistor is connected to an emitter of the second bipolar transistor, the emitter of the fourth transistor is connected to ground, and the second current is supplied to the collector of the fourth transistor.

5. The power amplification circuit according to claim 1 , wherein the first control circuit and the second control circuit each comprise a variable current source.

6. A power amplification circuit comprising:

an amplifier that amplifies an input signal and outputs an amplified signal;

a first bias circuit that supplies a first bias current or voltage to the amplifier;

a second bias circuit that supplies a second bias current or voltage to the amplifier;

a first control circuit that controls a level of the first bias current or voltage; and

a second control circuit that controls a level of the second bias current or voltage;

wherein a current supplying capacity of the first bias circuit is different from a current supplying capacity of the second bias circuit,

wherein the first control circuit outputs a first current that controls the first bias current or voltage,

wherein the second control circuit outputs a second current that controls the second bias current or voltage,

wherein the first bias circuit comprises a first bipolar transistor that outputs the first bias current or voltage in accordance with the first current,

wherein the second bias circuit comprises a second bipolar transistor that outputs the second bias current or voltage in accordance with the second current,

wherein a size of the first bipolar transistor is different from a size of the second bipolar transistor,

wherein the second bias circuit further comprises a fourth transistor, and

wherein a collector of the fourth transistor is connected to a base of the second bipolar transistor, a base of the fourth transistor is connected to an emitter of the second bipolar transistor, the emitter of the fourth transistor is connected to ground, and the second current is supplied to the collector of the fourth transistor.

7. The power amplification circuit according to claim 6 ,

wherein the first bias circuit further comprises a first resistance element that is connected in series between an emitter of the first bipolar transistor and the amplifier,

wherein the second bias circuit further comprises a second resistance element that is connected in series between an emitter of the second bipolar transistor and the amplifier, and

wherein a resistance value of the first resistance element is different from a resistance value of the second resistance element.

8. The power amplification circuit according to claim 6 , wherein the first control circuit and the second control circuit each comprise a variable current source.