IP Library › Granted Patent US 10,823,891
Granted Patent B2
US 10,823,891 · App. 16/086,788 · Granted Nov 3, 2020

Infrared-absorbing material, liquid dispersion of infrared-absorbing material, object including dispersed infrared-absorbing material, transparent base laminated with object including dispersed infrared-absorbing material, and infrared-absorbing transparent base

Inventors: Keisuke Machida (Ichikawa, JP); Kenji Adachi (Ichikawa, JP); Satoshi Yoshio (Tokyo, JP)
Assignee: SUMITOMO METAL MINING CO., LTD.
G02B5/208B32B17/10018B32B27/18C01B33/06C01B35/04G02B5/22
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,823,891
App. No.
16/086,788
Granted
Nov 3, 2020
Kind
B2
Abstract

An infrared-absorbing material is provided, the infrared-absorbing material including at least one kind of transition metal; and at least one kind of element selected from B, C, N, O, etc., as a ligand of the transition metal, wherein at a bottom part of a conduction band, a bottom band of the conduction band is formed, the bottom band of the conduction band being a band occupied by d orbitals of the transition metal or a band in which the d orbitals of the transition metal and p orbitals of the ligand are hybridized, at a top part of a valence band, a top band of the valence band is formed, the top band of the valence band being a band occupied by the p orbitals of the ligand or a band in which the p orbitals of the ligand and the d orbitals of the transition metal are hybridized, in two wavenumber directions or less, which are highly symmetric points in a Brillouin zone, the bottom band of the conduction band and the top band of the valence band are close to each other by less than 3.0 eV, in another wavenumber direction excluding the wavenumber direction in which the bottom band of the conduction band and the top band of the valence band are close to each other by less than 3.0 eV, a wide band gap structure, in which a band gap is 3.0 eV or more, is formed, and a plasma frequency is 2.5 eV or more and 10.0 eV or less.

Claims (51)

1. An infrared-absorbing material dispersion liquid comprising:

an infrared-absorbing material; and

a liquid medium, wherein

the liquid medium includes one or more kinds of components selected from water, an organic solvent, fat and oil, liquid resin, and a liquid plasticizer for plastic, and wherein

the infrared-absorbing material includes:

at least one kind of transition metal; and

at least one kind of element selected from B, C, N, O, F, Al, Si, P, S, CI, Se, and Te as a ligand of the transition metal, wherein

at a bottom part of a conduction band, a bottom band of the conduction band is formed, the bottom band of the conduction band being a band occupied by d orbitals of the transition metal or a band in which the d orbitals of the transition metal and p orbitals of the ligand are hybridized,

at a top part of a valence band, a top band of the valence band is formed, the top band of the valence band being a band occupied by the p orbitals of the ligand or a band in which the p orbitals of the ligand and the d orbitals of the transition metal are hybridized,

in two wavenumber directions or less, which are highly symmetric points in a Brillouin zone, the bottom band of the conduction band and the top band of the valence band are close to each other by less than 3.0 eV,

in another wavenumber direction excluding the wavenumber direction in which the bottom band of the conduction band and the top band of the valence band are close to each other by less than 3.0 eV, a wide band gap structure, in which a band gap is 3.0 eV or more, is formed, and

a plasma frequency is 2.5 eV or more and 10.0 eV or less.

2. The infrared-absorbing material dispersion liquid according to claim 1 , wherein an imaginary part £ 2 of a theoretical dielectric function is 5.0 or less, in a photon energy range of 1.60 eV or more and 3.30 eV or less.

3. The infrared-absorbing material dispersion liquid according to claim 1 , wherein an imaginary part £ 2 of a theoretical dielectric function is 1.5 or less and the imaginary part £ 2 has no local maximum value, in a photon energy range of 1.90 eV or more and 2.45 eV or less.

4. The infrared-absorbing material dispersion liquid according to claim 1 , wherein the infrared-absorbing material is formed of particles having a volume average particle diameter of 1 nm or more and 500 nm or less.

5. An infrared-absorbing material dispersion liquid comprising:

an infrared-absorbing material; and

a liquid medium, wherein

the liquid medium includes one or more kinds of components selected from water, an organic solvent, fat and oil, liquid resin, and a liquid plasticizer for plastic, and wherein

the infrared-absorbing material includes:

at least one kind of transition metal; and

at least one kind of element selected from B, C, N, O, F, Al, Si, P, S, CI, Se, and Te as a ligand of the transition metal, wherein

at a bottom part of a conduction band, a bottom band of the conduction band is formed, the bottom band of the conduction band being a band occupied by d orbitals of the transition metal or a band in which the d orbitals of the transition metal and p orbitals of the ligand are hybridized,

at a top part of a valence band, a top band of the valence band is formed, the top band of the valence band being a band occupied by the p orbitals of the ligand or a band in which the p orbitals of the ligand and the d orbitals of the transition metal are hybridized,

in one wavenumber direction, which is a highly symmetric point in a Brillouin zone, the bottom band of the conduction band and the top band of the valence band cross each other,

in two wavenumber directions or less, which are highly symmetric points in the Brillouin zone, the bottom band of the conduction band and the top band of the valence band are close to each other by less than 3.0 eV,

in another wavenumber direction excluding the wavenumber direction in which the bottom band of the conduction band and the top band of the valence band cross each other or are close to each other by less than 3.0 eV, a wide band gap structure, in which a band gap is 3.0 eV or more, is formed, and

a plasma frequency is 2.5 eV or more and 10.0 eV or less.

6. An infrared-absorbing material dispersion object comprising:

an infrared-absorbing material; and

a thermoplastic resin, wherein

the infrared-absorbing material includes:

at least one kind of transition metal; and

at least one kind of element selected from B, C, N, O, F, Al, Si, P, S, CI, Se, and Te as a ligand of the transition metal, wherein

at a bottom part of a conduction band, a bottom band of the conduction band is formed, the bottom band of the conduction band being a band occupied by d orbitals of the transition metal or a band in which the d orbitals of the transition metal and p orbitals of the ligand are hybridized,

at a top part of a valence band, a top band of the valence band is formed, the top band of the valence band being a band occupied by the p orbitals of the ligand or a band in which the p orbitals of the ligand and the d orbitals of the transition metal are hybridized,

in two wavenumber directions or less, which are highly symmetric points in a Brillouin zone, the bottom band of the conduction band and the top band of the valence band are close to each other by less than 3.0 eV,

in another wavenumber direction excluding the wavenumber direction in which the bottom band of the conduction band and the top band of the valence band are close to each other by less than 3.0 eV, a wide band gap structure, in which a band gap is 3.0 eV or more, is formed, and

a plasma frequency is 2.5 eV or more and 10.0 eV or less.

7. The infrared-absorbing material dispersion object according to claim 6 , wherein

the thermoplastic resin is one kind of resin selected from a resin group including polyethylene terephthalate resin, polycarbonate resin, acrylic resin, styrene resin, polyamide resin, polyethylene resin, vinyl chloride resin, olefin resin, epoxy resin, polyimide resin, fluororesin, an ethylene-vinyl acetate copolymer, and polyvinyl acetal resin,

or a mixture of two or more kinds of resin selected from the resin group,

or a copolymer of two or more kinds of resin selected from the resin group.

8. The infrared-absorbing material dispersion object according to claim 6 , wherein the infrared-absorbing material dispersion object has a sheet shape, a board shape, or a film shape.

9. A transparent base laminated with the infrared-absorbing material dispersion object comprising:

a plurality of transparent bases; and

the infrared-absorbing material dispersion object according to claim 6 , wherein

the infrared-absorbing material dispersion object is disposed between the plurality of transparent bases.

10. An infrared-absorbing transparent base comprising:

a transparent base; and

the infrared-absorbing material dispersion object according to claim 6 that is disposed as a coating layer on at least one side of the transparent base.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 20, 2018
From: MACHIDA, KEISUKE; ADACHI, KENJI; YOSHIO, SATOSHI
To: SUMITOMO METAL MINING CO., LTD.
Reel/Frame 046927/0434 →
Priority Claims (1)
JP 2016-074170 · Apr 1, 2016 · national
Continuity (1)
Related Publication 20190101674A1 · Apr 4, 2019