Vacuum chuck and semiconductor manufacturing apparatus having the same
A vacuum chuck includes an adsorption plate including porous materials, a housing including an accommodation part, a plurality of adsorption grooves, and a vacuum opening formed in the accommodation part. The adsorption plate is disposed in the accommodation part, and the plurality of adsorption grooves each have an arc shape and is formed in a surface of the accommodation part. The vacuum chuck further includes a vacuum line configured to supply vacuum pressure to the vacuum opening.
1. A vacuum chuck, comprising:
an adsorption plate including porous materials;
a housing including an accommodation part, a plurality of adsorption grooves, and a vacuum opening formed in the accommodation part, wherein the adsorption plate is disposed in the accommodation part, and the plurality of adsorption grooves each have an arc shape and is formed in a surface of the accommodation part; and
a vacuum line configured to supply vacuum pressure to the vacuum opening, wherein the plurality of adsorption grooves are formed in an uppermost surface of the housing.
2. The vacuum chuck of claim 1 , wherein a first end of each of the plurality of adsorption grooves is in contact with the accommodation part, and a second end of each of the plurality of adsorption grooves has a radial form and is not in contact with edges of the housing.
3. The vacuum chuck of claim 2 , wherein the accommodation part and the plurality of adsorption grooves receive the vacuum pressure through the vacuum opening.
4. The vacuum chuck of claim 1 , wherein a radius of the housing is about 1.5 to about 2 times a radius of the adsorption plate, and a difference between the radius of the housing and the radius of the adsorption plate is equal to or greater than 10 mm.
5. The vacuum chuck of claim 4 , wherein a radius of a wafer is greater than the radius of the housing, and the vacuum pressure is applied only to a center of the wafer.
6. The vacuum chuck of claim 1 , wherein a depth of the accommodation Tart is greater than a depth of the plurality of adsorption grooves, and a depth of the plurality of adsorption grooves is about 180 μm to about 220 μm.
7. The vacuum chuck of claim 1 , wherein the plurality of adsorption grooves have a same curvature radius, and an inflection point is located at each of the plurality of adsorption grooves and is spaced apart from the accommodation part by a first distance.
8. The vacuum chuck of claim 7 , wherein a rotation direction of a wafer and an arrangement direction of convex portions of the plurality of adsorption grooves are the same.
9. The vacuum chuck of claim 1 , wherein a density of materials of the housing is higher than a density of materials of the adsorption, plate.
10. The vacuum chuck of claim 1 , wherein a level of an uppermost surface of the adsorption plate is the same as or lower than a level of the uppermost surface of the housing.