Solid state imaging device

1. A solid state imaging device, comprising:

a substrate;

a pixel provided at a surface of the substrate;

a first interconnect layer provided on the substrate, the first interconnect layer having a first opening opposing the pixel;

a second interconnect layer provided on the first interconnect layer, the second interconnect layer having a second opening opposing the first opening; and

an insulating film covering the pixel, the first interconnect layer, and the second interconnect layer and having a plurality of recesses provided in a region opposing the second opening,

an edge of the second opening being farther than an edge of the first opening away from a center of the first opening,

each of the plurality of recesses having an opening and a concave surface and being disposed in a region inward from the edge of the second opening, the opening having a circular configuration, the concave surface having a curvature in a cross-sectional view of the insulating film.

2. The device according to claim 1 , wherein adjacent openings of the plurality of recesses overlap in a top view.

3. The device according to claim 1 , further comprising a plurality of vias provided between the second interconnect layer and the first interconnect layer at a vicinity of the edge of the second opening.

4. The device according to claim 3 , wherein the plurality of vias are metal members.

5. The device according to claim 3 , wherein

a plurality of the pixels is arranged in a first direction, and

the plurality of vias is arranged in the first direction.

6. The device according to claim 5 , wherein the plurality of vias is arranged to sandwich, in a second direction crossing the first direction, a region above the plurality of pixels.

7. The device according to claim 1 , wherein

a plurality of the pixels is arranged in a first direction, and

the edge of the second opening is farther than the edge of the first opening along a second direction crossing the first direction.

8. The device according to claim 7 , wherein the first interconnect layer is provided also between the plurality of pixels adjacent to each other in the first direction.

9. The device according to claim 8 , wherein a plurality of the first openings is arranged in the first direction.

10. The device according to claim 9 , wherein the second opening extends in a slit configuration in the first direction.

11. The device according to claim 1 , wherein the edge of the first opening is positioned in a region overlapping the pixel.

12. The device according to claim 1 , wherein the device is a linear sensor including a pixel column including a plurality of the pixels arranged in a first direction.

13. The device according to claim 1 , further comprising a diffusion layer provided in a region of the surface of the substrate proximal to the pixel, the first interconnect layer being connected to the diffusion layer.

14. The device according to claim 1 , wherein the first interconnect layer and the second interconnect layer include aluminum.