Combining light-emitting elements of differing divergence on the same substrate
An optoelectronic device includes a semiconductor substrate and a monolithic array of light-emitting elements formed on the substrate. The light-emitting elements include a first plurality of first emitters, configured to emit respective first beams of light with a first angular divergence, at respective first positions in the array, and a second plurality of second emitters, configured to emit respective second beams of light with a second angular divergence that is at least 50% greater than the first angular divergence, at respective second positions in the array.
1. An optoelectronic device, comprising:
a semiconductor substrate; and
a monolithic array of light-emitting elements formed on the substrate comprising epitaxial structures of multiple epitaxial layers, the light-emitting elements comprising:
a first plurality of first emitters, configured to emit respective first beams of light with a first angular divergence, at respective first positions in the array, wherein the first emitters comprise vertical-cavity surface-emitting lasers (VCSELs); and
a second plurality of second emitters, in which one or more of the epitaxial layers have been modified, relative to the first emitters, so that the second emitters emit respective second beams of light with a second angular divergence that is at least 50% greater than the first angular divergence, at respective second positions in the array, wherein the second emitters comprise incoherent light-emitting elements.
2. The optoelectronic device according to claim 1 , wherein the incoherent light-emitting elements comprise resonant-cavity light-emitting diodes (RCLEDs).
3. The optoelectronic device according to claim 2 , wherein the VCSELs comprise first upper multilayer Bragg reflectors comprising a first number of mirror layers, and the RCLEDs comprise second upper multilayer Bragg reflectors comprising a second number of mirror layers, which is smaller than the first number.
4. The optoelectronic device according to claim 1 , wherein the second positions are interspersed with the first positions in the array.
5. The optoelectronic device according to claim 1 , wherein the first positions form an uncorrelated pattern.
6. The optoelectronic device according to claim 1 , wherein the first emitters and the second emitters are coupled to be driven separately so that the device emits either or both of the first beams from the first emitters and the second beams from the second emitters.
7. The optoelectronic device according to claim 6 , wherein the first beams emitted by the first emitters form a pattern of spots on a region in space, while the second beams cast flood illumination on the region.
8. An optoelectronic device, comprising:
a semiconductor substrate; and
a monolithic array of light-emitting elements formed on the substrate comprising epitaxial structures of multiple epitaxial layers, the light-emitting elements comprising:
a first plurality of first emitters, configured to emit respective first beams of light with a first angular divergence, at respective first positions in the array; and
a second plurality of second emitters, in which one or more of the epitaxial layers have been modified, relative to the first emitters, so that the second emitters emit respective second beams of light with a second angular divergence that is at least 50% greater than the first angular divergence, at respective second positions in the array,
wherein the monolithic array comprises an arrangement of mutually adjacent unit cells, wherein each unit cell comprises a set of radiators capable of functioning as VCSELs, and wherein in at least some of the unit cells at least one of the radiators is converted to an incoherent light-emitting element by modification of the one or more of the epitaxial layers.
9. The optoelectronic device according to claim 8 , wherein the first emitters comprise first VCSELs, and the second emitters comprise second VCSELs.
10. The optoelectronic device according to claim 9 , wherein the first VCSELs have first optical apertures, and the second VCSELs have second optical apertures, which are smaller than the first optical apertures.
11. The optoelectronic device according to claim 10 , wherein the first VCSELs comprise first mesas having a first width, and the second VCSELs comprise second mesas having a second width, which is smaller than the first width.
12. The optoelectronic device according to claim 8 , wherein the positions of the radiators in at least some of the unit cells are shifted as compared to the positions in the adjacent unit cells.
13. The optoelectronic device according to claim 8 , wherein the second positions are interspersed with the first positions in the array.
14. The optoelectronic device according to claim 8 , wherein the first positions form an uncorrelated pattern.
15. The optoelectronic device according to claim 8 , wherein the first emitters and the second emitters are coupled to be driven separately so that the device emits either or both of the first beams from the first emitters and the second beams from the second emitters.
16. A method for producing an optoelectronic device, the method comprising:
providing a semiconductor substrate; and
forming a monolithic array of light-emitting elements on the substrate, comprising:
forming a first plurality of first emitters, configured to emit respective first beams of light with a first angular divergence, at respective first positions in the array; and
forming a second plurality of second emitters, configured to emit respective second beams of light with a second angular divergence that is at least 50% greater than the first angular divergence, at respective second positions in the array,
wherein forming the monolithic array of light-emitting elements comprises defining in the monolithic array mutually adjacent unit cells, and forming in each unit cell a set of radiators capable of functioning as vertical-cavity surface-emitting lasers (VCSELs), wherein each of the first emitters comprises a respective one of the VCSELs, and forming the second plurality of the second emitters comprises converting in at least some of the unit cells at least one of the radiators to serve as one of the second emitters.
17. The method according to claim 16 , wherein the VCSELs comprise Bragg reflectors comprising multiple layers, and wherein converting the at least one of the radiators comprises etching away at least some of the layers so as to convert the at least one of the radiators to a resonant-cavity light-emitting diode (RCLED).
18. The method according to claim 16 , wherein the first and second emitters respectively comprise first and second VCSELs, wherein the first VCSELs have first optical apertures, and wherein converting the at least one of the radiators comprises etching the VCSELs so as to form second optical apertures, smaller than the first optical apertures, in the second VCSELs.
19. The method according to claim 16 , wherein the second positions are interspersed with the first positions in the array.
20. An optoelectronic device, comprising:
a semiconductor substrate; and
a monolithic array of light-emitting elements formed on the substrate, the light-emitting elements comprising:
a first plurality of first emitters, configured to emit respective first beams of light with a first angular divergence to form a pattern of structured radiation on a region in space, at respective first positions in the array, wherein the first emitters comprise vertical-cavity surface-emitting lasers (VCSELs); and
a second plurality of second emitters, configured to emit respective second beams of light with a second angular divergence that is greater than the first angular divergence to cast flood illumination on the region, at respective second positions in the array, wherein the second emitters comprise incoherent light-emitting elements.