Image sensor including transfer gates with projections extending from the sidewalls and method of fabricating the same
An image sensor includes a first transfer gate formed over a substrate, and including a first projection; a second transfer gate formed over the substrate, neighboring the first transfer gate, and including a second projection; and a floating diffusion formed in the substrate, and partially overlapping with the first transfer gate and the second transfer gate, wherein the first projection and the second projection face each other.
1. An image sensor comprising:
a first transfer gate, a second transfer gate, a third transfer gate, and a fourth transfer gate that are formed over a substrate, wherein each of the first to fourth transfer gates has a first sidewall having a first projection and a second sidewall having a second projection; and
a floating diffusion formed in the substrate, and partially overlapping with the first transfer gate to the fourth transfer gate,
wherein the first sidewall of the first transfer gate is arranged to face the second sidewall of the second transfer gate,
the first sidewall of the second transfer gate is arranged to face the second sidewall of the third transfer gate,
the first sidewall of the third transfer gate is arranged to face the second sidewall of the fourth transfer gate, and
the first sidewall of the fourth transfer gate is arranged to face the second sidewall of the first transfer gate, and
wherein the first projections on the first sidewalls and the second projections on the second sidewalls are arranged to face each other.
2. The image sensor according to claim 1 , further comprising:
spacers formed on the first and second sidewalls of the first transfer gate to the fourth transfer gate.
3. The image sensor according to claim 2 , wherein the spacers fill a space between the first projections and the second projections.
4. The image sensor according to claim 1 , wherein the first projections and the second projections overlap with the floating diffusion.
5. The image sensor according to claim 1 , further comprising:
spacers formed on the first and second sidewalls of the first transfer gate to the fourth transfer gate, and
wherein the first transfer gate to the fourth transfer gate are separated by a gap greater than two times the thickness of the spacers, respectively.
6. The image sensor according to claim 1 , wherein the floating diffusion comprises:
a first diffusion region formed in the substrate; and
a second diffusion region formed in the first diffusion region to have the same conductivity type as the first diffusion region and an impurity doping concentration greater than the first diffusion region.
7. The image sensor according to claim 6 , wherein the first diffusion region surrounds side surfaces and a bottom surface of the second diffusion region.
8. The image sensor according to claim 6 , wherein the first projections and the second projections overlap with the first diffusion region.
9. The image sensor according to claim 6 , further comprising:
spacers formed on the first and second sidewalls of the first transfer gate to the fourth transfer gate, and
wherein interfaces between the first diffusion region and the second diffusion region are substantially aligned with sidewalls of the spacers.
10. An image sensor, comprising:
a floating diffusion region in a substrate; and
a first to fourth transfer gates arranged to surround the floating diffusion region;
wherein each of the first to fourth transfer gates include a first sidewall and a second sidewall,
wherein each of the first to fourth transfer gates includes a first projection on the first sidewall and a second projection on the second sidewall, respectively,
wherein:
the first sidewall of the first transfer gate faces the second sidewall of the second transfer gate,
the first sidewall of the second transfer gate faces the second sidewall of the third transfer gate,
the first sidewall of the third transfer gate faces the second sidewall of the fourth transfer gate, and
the first sidewall of the fourth transfer gate faces the second sidewall of the first transfer gate.
11. The image sensor of claim 10 , wherein:
the first sidewall of the first transfer gate extends in parallel with the second sidewall of the second transfer gate,
the first sidewall of the second transfer gate extends in parallel with the second sidewall of the third transfer gate,
the first sidewall of the third transfer gate extends in parallel with the second sidewall of the fourth transfer gate, and
the first sidewall of the fourth transfer gate extends in parallel with the second sidewall of the first transfer gate.
12. The image sensor of claim 10 , wherein the floating diffusion region includes:
a first diffusion region; and
a second diffusion region,
wherein the first diffusion region surrounds side surfaces and bottom surfaces of the second diffusion region, and
wherein the first projections and the second projections vertically overlap the first diffusion region and does not vertically overlap the second diffusion region.
13. The image sensor of claim 10 , further comprising:
spacers formed on the first and second sidewalls of the first to fourth transfer gates,
wherein the spacers are arranged to have a closed loop shape in a top view.