Image sensor and method for fabricating the same
An image sensor is provided. The image sensor includes, a substrate including a light-receiving region and a pad region disposed around the light-receiving region, wherein the light-receiving region receives light to generate image data, a photoelectric conversion layer disposed on the light-receiving region of the substrate, an anti-reflection layer disposed on the photoelectric conversion layer and including a plurality of subsidiary anti-reflection layers, a microlens disposed on the anti-reflection layer, a delamination-preventing layer disposed on the pad region of the substrate, and a wiring layer disposed on the delamination-preventing layer, wherein a lowermost one of the subsidiary anti-reflection layers of the anti-reflection layer includes a first material composition and the delamination-preventing layer includes a second material composition different from the first material composition.
1. An image sensor comprising:
a substrate comprising a light-receiving region and a pad region disposed around the light-receiving region, wherein the light-receiving region receives light to generate image data;
a photoelectric conversion layer disposed in the light-receiving region of the substrate;
an anti-reflection layer disposed on the photoelectric conversion layer and comprising a plurality of subsidiary anti-reflection layers;
a microlens disposed on the anti-reflection layer;
a delamination-preventing layer extending along an upper surface of the substrate, in the pad region of the substrate; and
a wiring layer disposed directly on the delamination-preventing layer,
wherein a lowermost one of the subsidiary anti-reflection layers of the anti-reflection layer includes a first material composition and the delamination-preventing layer includes a second material composition different from the first material composition.
2. The image sensor according to claim 1 , wherein a lower surface of the wiring layer is higher than the upper surface of the substrate.
3. The image sensor according to claim 1 , wherein the anti-reflection layer is not disposed on the pad region of the substrate.
4. The image sensor according to claim 3 , wherein the delamination-preventing layer is not disposed on the light-receiving region of the substrate.
5. The image sensor according to claim 1 , wherein the first material composition has a refractive index between a refractive index of air and a refractive index of the substrate.
6. The image sensor according to claim 1 , wherein an uppermost one of the subsidiary anti-reflection layers of the anti-reflection layer includes a third material composition different from the second material composition of the delamination-preventing layer.
7. The image sensor according to claim 1 , wherein a lower surface of the anti-reflection layer and a lower surface of the delamination-preventing layer are disposed in a substantially same plane.
8. The image sensor according to claim 1 , further comprising:
a color filter layer interposed between the anti-reflection layer and the microlens.
9. The image sensor according to claim 1 , further comprising:
a conductive pad disposed on the wiring layer.
10. The image sensor according to claim 1 , further comprising:
a plug, wherein the plug penetrates through the substrate and the delamination-preventing layer of the pad region to be connected to the wiring layer.
11. An image sensor comprising:
a substrate comprising a light-receiving region and a pad region disposed around the light-receiving region, wherein the light-receiving region receives light to generate image data;
a photoelectric conversion layer disposed in the light-receiving region of the substrate;
an anti-reflection layer disposed on the photoelectric conversion layer;
a microlens disposed on the anti-reflection layer;
a delamination-preventing layer extending along an upper surface of the substrate, in the pad region of the substrate; and
a wiring layer disposed directly on the delamination-preventing layer, a lower surface of the wiring layer being higher than the upper surface of the substrate,
wherein the delamination-preventing layer includes a material composition not included in the anti-reflection layer.
12. The image sensor according to claim 11 , wherein the delamination-preventing layer is in contact with both of the upper surface of the substrate and the lower surface of the wiring layer.
13. The image sensor according to claim 11 , wherein the lower surface of the wiring layer is in contact with an uppermost surface of the delamination-preventing layer.
14. The image sensor according to claim 11 , wherein the anti-reflection layer comprises a first subsidiary anti-reflection layer and a second subsidiary anti-reflection layer on the first subsidiary anti-reflection layer, and
the first subsidiary anti-reflection layer and the delamination-preventing layer comprise different material compositions.
15. The image sensor according to claim 14 , wherein a refractive index value of the first subsidiary anti-reflection layer is lower than a refractive index value of the second subsidiary anti-reflection layer.