Dual metal silicide structures for advanced integrated circuit structure fabrication
Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a P-type semiconductor device above a substrate and including first and second semiconductor source or drain regions adjacent first and second sides of a first gate electrode. A first metal silicide layer is directly on the first and second semiconductor source or drain regions. An N-type semiconductor device includes third and fourth semiconductor source or drain regions adjacent first and second sides of a second gate electrode. A second metal silicide layer is directly on the third and fourth semiconductor source or drain regions, respectively. The first metal silicide layer comprises at least one metal species not included in the second metal silicide layer.
1. An integrated circuit structure, comprising:
a P-type semiconductor device above a substrate, the P-type semiconductor device comprising:
first and second semiconductor source or drain regions adjacent first and second sides of a first gate electrode, respectively, the first gate electrode having a bottom; and
a first metal silicide layer directly on the first and second semiconductor source or drain regions, the first metal silicide layer above the bottom of the first gate electrode; and
an N-type semiconductor device above the substrate, the N-type semiconductor device comprising:
third and fourth semiconductor source or drain regions adjacent first and second sides of a second gate electrode, respectively, the second gate electrode having a bottom; and
a second metal silicide layer directly on the third and fourth semiconductor source or drain regions, the second metal silicide layer below the bottom of the second gate electrode, wherein one of the first metal silicide layer or the second metal silicide layer comprises at least one metal species not included in the other of the first metal silicide layer or the second metal silicide layer.
2. The integrated circuit structure of claim 1 , wherein the first metal silicide layer comprises the at least one metal species, the at least one metal species not included in the second metal silicide layer.
3. The integrated circuit structure of claim 1 , wherein the first metal silicide layer comprises nickel, platinum and silicon.
4. The integrated circuit structure of claim 3 , wherein the first metal silicide layer further comprises titanium.
5. The integrated circuit structure of claim 1 , wherein the second metal silicide layer comprises titanium and silicon.
6. The integrated circuit structure of claim 1 , wherein the first metal silicide layer further comprises germanium.
7. The integrated circuit structure of claim 1 , wherein the first and second semiconductor source or drain regions are first and second embedded semiconductor source or drain regions comprising silicon and germanium.
8. The integrated circuit structure of claim 1 , wherein the third and fourth semiconductor source or drain regions are third and fourth embedded semiconductor source or drain regions comprising silicon.
9. A computing device, comprising:
a board; and
a component coupled to the board, the component including an integrated circuit structure, comprising:
a P-type semiconductor device above a substrate, the P-type semiconductor device comprising:
first and second semiconductor source or drain regions adjacent first and second sides of a first gate electrode, respectively, the first gate electrode having a bottom; and
a first metal silicide layer directly on the first and second semiconductor source or drain regions, the first metal silicide layer above the bottom of the first gate electrode; and
an N-type semiconductor device above the substrate, the N-type semiconductor device comprising:
third and fourth semiconductor source or drain regions adjacent first and second sides of a second gate electrode, respectively, the second gate electrode having a bottom; and
a second metal silicide layer directly on the third and fourth semiconductor source or drain regions, the second metal silicide layer below the bottom of the second gate electrode, wherein one of the first metal silicide layer or the second metal silicide layer comprises at least one metal species not included in the other of the first metal silicide layer or the second metal silicide layer.
10. The computing device of claim 9 , further comprising:
a memory coupled to the board.
11. The computing device of claim 9 , further comprising:
a communication chip coupled to the board.
12. The computing device of claim 9 , further comprising:
a camera coupled to the board.
13. The computing device of claim 9 , further comprising:
a battery coupled to the board.
14. The computing device of claim 9 , further comprising:
an antenna coupled to the board.
15. The computing device of claim 9 , wherein the component is a packaged integrated circuit die.
16. The computing device of claim 9 , wherein the component is selected from the group consisting of a processor, a communications chip, and a digital signal processor.
17. The computing device of claim 9 , wherein the computing device is selected from the group consisting of a mobile phone, a laptop, a desk top computer, a server, and a set-top box.
18. The computing device of claim 9 , wherein the first metal silicide layer comprises the at least one metal species, the at least one metal species not included in the second metal silicide layer.
19. The computing device of claim 9 , wherein the first metal silicide layer comprises nickel, platinum and silicon.
20. The computing device of claim 19 , wherein the first metal silicide layer further comprises titanium.