Semiconductor device and manufacturing method of semiconductor device
There is provided a semiconductor device comprising: a semiconductor substrate; an emitter region of a first conductivity type provided inside the semiconductor substrate; a base region of a second conductivity type provided below the emitter region inside the semiconductor substrate; an accumulation region of the first conductivity type provided below the base region inside the semiconductor substrate, and containing hydrogen as an impurity; and a trench portion provided to pass through the emitter region, the base region and the accumulation region from an upper surface of the semiconductor substrate.
1. A semiconductor device comprising:
a semiconductor substrate;
an emitter region of a first conductivity type provided inside the semiconductor substrate;
a base region of a second conductivity type provided below the emitter region inside the semiconductor substrate, the base region containing hydrogen;
an accumulation region of the first conductivity type provided below the base region inside the semiconductor substrate, and containing hydrogen as an impurity; and
a trench portion provided to pass through the emitter region, the base region and the accumulation region from an upper surface of the semiconductor substrate.
2. The semiconductor device according to claim 1 , wherein concentration distribution of hydrogen in a depth direction of the semiconductor substrate has peaks in both of the base region and the accumulation region.
3. The semiconductor device according to claim 1 , wherein a peak value of a hydrogen concentration distribution in the accumulation region is higher than a peak value of a hydrogen concentration distribution in the base region.
4. The semiconductor device according to claim 1 , wherein in a depth direction of the semiconductor substrate, a peak position of a doping concentration distribution in the base region coincides with a peak position of a hydrogen concentration distribution in the base region.
5. The semiconductor device according to claim 1 , wherein a peak value of a hydrogen concentration distribution in the base region is higher than a peak value of a doping concentration distribution in the base region.
6. The semiconductor device according to claim 1 , further comprising a drift region of the first conductivity type provided below the accumulation region inside the semiconductor substrate, and having a lower doping concentration than the emitter region,
wherein a peak value of a hydrogen concentration distribution in the base region is higher than the doping concentration in the drift region.
7. The semiconductor device according to claim 1 , wherein a concentration of hydrogen contained in the base region is a concentration such that the conductivity type of the base region is not inverted.
8. The semiconductor device according to claim 1 , wherein in a depth direction of the semiconductor substrate, a peak width of a hydrogen concentration distribution in the base region is smaller than a peak width of a doping concentration distribution in the base region.
9. A semiconductor device comprising,
a semiconductor substrate;
an emitter region of a first conductivity type provided inside the semiconductor substrate;
a base region of a second conductivity type provided below the emitter region inside the semiconductor substrate;
an accumulation region of the first conductivity type provided below the base region inside the semiconductor substrate, and containing hydrogen as an impurity;
a trench portion provided to pass through the emitter region, the base region and the accumulation region from an upper surface of the semiconductor substrate; and
inside the semiconductor substrate, an intermediate region having a lower doping concentration lower than the accumulation region, between the base region and the accumulation region.
10. The semiconductor device according to claim 9 , comprising a drift region of the first conductivity type provided below the accumulation region inside the semiconductor substrate and having a lower doping concentration than the emitter region,
wherein the doping concentration of the intermediate region is higher than the doping concentration of the drift region.
11. The semiconductor device according to claim 1 , wherein in a depth direction of the semiconductor substrate, the base region is arranged to be in contact with the accumulation region.
12. The semiconductor device according to claim 1 , further comprising:
an interlayer dielectric film provided to cover the trench portion on the upper surface of the semiconductor substrate; and
a barrier metal provided on an entire upper surface of the interlayer dielectric film above the trench portion.
13. A semiconductor device comprising:
a semiconductor substrate;
an emitter region of a first conductivity type provided inside the semiconductor substrate;
a base region of a second conductivity type provided below the emitter region inside the semiconductor substrate;
an accumulation region of the first conductivity type provided below the base region inside the semiconductor substrate, and containing hydrogen as an impurity;
a trench portion provided to pass through the emitter region, the base region and the accumulation region from an upper surface of the semiconductor substrate;
a drift region of the first conductivity type provided below the accumulation region inside the semiconductor substrate, and having a doping concentration lower than that of the emitter region; and
a lifetime killer provided closer to the upper surface side in the semiconductor substrate than a center of the drift region in a depth direction,
wherein in a depth direction of the semiconductor substrate, a peak position of a concentration of the lifetime killer is arranged at a position not overlapping with a peak position of a concentration of the hydrogen.
14. The semiconductor device according to claim 1 , wherein a concentration of the hydrogen contained in the base region is lower than a peak value of the concentration of the hydrogen contained in the accumulation region.