Composition for post chemical-mechanical-polishing cleaning

1. A method of cleaning a substrate post chemical mechanical polishing, comprising cleaning a substrate after the substrate has been polished with a chemical mechanical polishing composition comprising an abrasive with a cleaning composition to remove residues and contaminants from the surface of the semiconductor substrate remaining after the polishing, wherein the cleaning composition comprises:

(A) polyethylene glycol (PEG) with a mass average molar mass (Mw) in the range of from 400 to 8,000 g/mol,

(B) an anionic polymer selected from the group consisting of poly(acrylic acid) (PAA), acrylic acid-maleic acid copolymers, polyaspartic acid (PASA), poly-glutamic acid (PGA), polyvinylphosphonic acid, polyvinylsulfonic acid, poly(styrenesulfonic acid), polycarboxylate ethers (PCE), PEG-phosphorous acids, and copolymers of said polymers, and

(C) water,

wherein the pH of the composition is in the range of from 7.0 to 10.5.

2. The method according to claim 1 , wherein the pH of the composition is in the range of from 7.5 to 10.

3. The method according to claim 1 , wherein

i) said anionic polymer (B) is poly(acrylic acid) (PAA) or an acrylic acid-maleic acid copolymer, with a mass average molar mass (Mw) of up to 10,000 g/mol,

and/or

ii) said polyethylene glycol (PEG) has a mass average molar mass (Mw) in the range of from 600 to 4,000 g/mol.

4. The method according to claim 1 , wherein the cleaning composition further comprises

(D) a corrosion inhibitor,

wherein the total amount of said corrosion inhibitor is in the range of from 0.001 wt.-% to 3 wt.-%, based on the total weight of the composition.

5. The method according to claim 4 , wherein the corrosion inhibitor (D) is at least one selected from the group consisting of acetylcysteine, N-acyl-sarcosines, alkylsulfonic acids, alkyl-aryl sulfonic acids, isophthalic acid, alkyl phosphates, polyaspartic acid, imidazole and its derivatives, polyethylenimine with a mass average molar mass (Mw) in the range of from 200 to 2,000 g/mol, derivatives of triazoles, and derivatives of ethylene diamine.

6. The method according to claim 1 , wherein the cleaning composition further comprises

(E) a defoamer,

wherein a total amount of said defoamer is in the range of from 0.01 wt.-% to 0.5 wt. %, based on the total weight of the cleaning composition

and/or

wherein the defoamer (E) is at least one selected from the group consisting of N-octyl pyrrolidone, monoglycerides of fatty acids, diglycerides of fatty acids, tri-n-butyl phosphate, tri-iso-butyl phosphate, methanol and primary, secondary or tertiary alcohols having 2 to 12 carbon atoms.

7. The method according to claim 1 , wherein the cleaning composition further comprises

(F) a base.

8. The method according to claim 1 , wherein all constituents of the cleaning composition are in the liquid phase.

9. The method according to claim 1 , wherein the composition is a ready-to-use post chemical-mechanical-polishing cleaning composition, comprising:

(A) a total amount of the polyethylene glycol (PEG) in a range of from 0.001 to 0.15 wt.-%, based on the total weight of the composition,

and

(B) a total amount of the one or more anionic polymers in a range of from 0.001 to 0.15 wt.-%, based on the total weight of the composition.

10. The method according to claim 1 , wherein the composition is a post chemical-mechanical-polishing cleaning composition concentrate, comprising:

(A) a total amount of the polyethylene glycol (PEG) in a range of from 0.1 to 7.5 wt.-based on the total weight of the composition,

and

(B) a total amount of the one or more anionic polymers in a range of from 0.1 to 7.5 wt.-%, based on the total weight of the composition.

11. The method according to claim 1 , wherein the composition is employed

as cobalt post chemical-mechanical-polishing cleaner

and/or

for cleaning a substrate comprising cobalt, and/or

for removing residues and contaminants from the surface of a semiconductor substrate comprising cobalt or a cobalt alloy.

12. The process according to claim 1 , wherein the process is for the manufacture of a semiconductor device from a semiconductor substrate comprising removing residues and contaminants from the surface of the semiconductor substrate by contacting the surface at least once with the composition, wherein the surface is a cobalt or a cobalt alloy-comprising surface.

13. The process according to claim 12 , further comprising chemical-mechanical-polishing, wherein the removing of residues and contaminants is performed after the chemical-mechanical-polishing.