High-frequency module
A front-end circuit ( 1 ), which is a high-frequency module, includes an input-output terminal ( 4 ); a duplexer ( 14 ) electrically connected to the input-output terminal ( 4 ); an LNA ( 171 ) electrically connected to the duplexer ( 14 ); a PA ( 161 ) electrically connected to the duplexer ( 14 ); a matching network ( 23 ) provided between the input-output terminal ( 4 ) and the duplexer ( 14 ) and including an inductor ( 231 ); and a matching network provided between the duplexer ( 14 ) and the PA ( 161 ) and including an inductor ( 162 ). The matching network including the inductor ( 162 ) is an output matching network configured to perform impedance matching between an output terminal of the PA ( 161 ) and the duplexer ( 14 ), and the inductor ( 231 ) includes a plurality of inductors ( 231 a and 231 b ) connected in series.
1. A high-frequency module comprising:
an antenna terminal;
a branching circuit electrically connected to the antenna terminal;
a reception circuit electrically connected to the branching circuit;
a transmission circuit electrically connected to the branching circuit, the transmission circuit including a power amplifier circuit;
a first matching network provided between the antenna terminal and the branching circuit, the first matching network including a first inductor; and
a second matching network provided between the branching circuit and the power amplifier circuit, the second matching network including a second inductor,
wherein the second matching network is an output matching network configured to perform impedance matching between an output terminal of the power amplifier circuit and the branching circuit,
wherein the first inductor includes a third inductor and a fourth inductor connected in series, and
wherein no elements are connected between a node on a path connecting the third inductor and the fourth inductor and ground.
2. The high-frequency module according to claim 1 ,
wherein the first inductor and the second inductor are coupled via an electromagnetic field.
3. The high-frequency module according to claim 1 ,
wherein the branching circuit is connected to a plurality of signal paths for transmitting and receiving high-frequency signals in a plurality of communication bands,
wherein the high-frequency module includes a switch configured to switch between the plurality of signal paths, and
wherein the first matching network is connected between the switch and the branching circuit, and performs impedance matching between the switch and the branching circuit.
4. The high-frequency module according to claim 1 ,
wherein the first inductor is connected between a node between the antenna terminal and the branching circuit and a ground.
5. The high-frequency module according to claim 2 ,
wherein the first inductor is connected between a node between the antenna terminal and the branching circuit and a ground.
6. The high-frequency module according to claim 3 ,
wherein the first inductor is connected between a node between the antenna terminal and the branching circuit and a ground.
7. A high-frequency module comprising:
an antenna terminal;
a branching circuit electrically connected to the antenna terminal;
a reception circuit electrically connected to the branching circuit;
a transmission circuit electrically connected to the branching circuit, the transmission circuit including a power amplifier circuit;
a first matching network provided between the antenna terminal and the branching circuit, the first matching network including a first inductor; and
a second matching network provided between the branching circuit and the power amplifier circuit, the second matching network including a second inductor,
wherein the second matching network is an output matching network configured to perform impedance matching between an output terminal of the power amplifier circuit and the branching circuit,
wherein the first inductor includes a plurality of inductors connected in series, and
wherein at least two of the plurality of inductors are disposed on a substrate so that directions of axes of at least two of the plurality of inductors intersect each other when viewed in plan.
8. The high-frequency module according to claim 2 ,
wherein the third inductor and the fourth inductor are disposed on a substrate so that directions of axes of the third inductor and the fourth inductor intersect each other when viewed in plan.
9. The high-frequency module according to claim 3 ,
wherein the third inductor and the fourth inductor are disposed on a substrate so that directions of axes of the third inductor and the fourth inductor intersect each other when viewed in plan.
10. A high-frequency module comprising:
an antenna terminal;
a branching circuit electrically connected to the antenna terminal;
a reception circuit electrically connected to the branching circuit;
a transmission circuit electrically connected to the branching circuit, the transmission circuit including a power amplifier circuit;
a first matching network provided between the antenna terminal and the branching circuit, the first matching network including a first inductor; and
a second matching network provided between the branching circuit and the power amplifier circuit, the second matching network including a second inductor,
wherein the second matching network is an output matching network configured to perform impedance matching between an output terminal of the power amplifier circuit and the branching circuit,
wherein the first inductor includes a plurality of inductors connected in series, and
wherein at least two of the plurality of inductors are disposed on a substrate so that directions of axes of at least two of the plurality of inductors intersect are parallel to the substrate.
11. The high-frequency module according to claim 7 ,
wherein at least two of the plurality of inductors are disposed on the substrate so that directions of axes of at least two of the plurality of inductors intersect each other at right angles when viewed in plan.
12. The high-frequency module according to claim 1 ,
wherein one inductor of the third inductor and the fourth inductor is a chip inductor, and
wherein another inductor of the third inductor and the fourth inductor is built into a substrate.
13. The high-frequency module according to claim 2 ,
wherein one inductor of the third inductor or the fourth inductor is a chip inductor, and
wherein another inductor of the third inductor or the fourth inductor is built into a substrate.
14. The high-frequency module according to claim 3 ,
wherein one inductor of the third inductor or the fourth inductor is a chip inductor, and
wherein another inductor of the third inductor or the fourth inductor is built into a substrate.
15. The high-frequency module according to claim 1 ,
wherein, of the third inductor and the fourth inductor, an inductance value of an inductor disposed closest to the second inductor is smaller than an inductance value of at least one inductor of the third inductor and the fourth inductor other than the inductor disposed closest to the second inductor.
16. The high-frequency module according to claim 2 ,
wherein, of the third inductor and the fourth inductor, an inductance value of an inductor disposed closest to the second inductor is smaller than the inductance values of at least one inductor of the third inductor and the fourth inductor other than the inductor disposed closest to the second inductor.
17. The high-frequency module according to claim 3 ,
wherein, of the third inductor and the fourth inductor, an inductance value of an inductor disposed closest to the second inductor is smaller than the inductance values of at least one inductor of the third inductor and the fourth inductor other than the inductor disposed closest to the second inductor.
18. The high-frequency module according to claim 1 ,
wherein inductance values of the third inductor and the fourth inductor are identical.
19. The high-frequency module according to claim 2 ,
wherein inductance values of the third inductor and the fourth inductor are identical.
20. The high-frequency module according to claim 3 ,
wherein inductance values of the third inductor and the fourth inductor are identical.