Method of manufacturing semiconductor device
Described herein is a technique capable of forming a film with uniform characteristics from an upper portion to a lower portion of a deep concave structure whose aspect ratio is high. According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: (a) placing a substrate comprising a deep concave structure constituted by at least an upper portion and a lower portion on a substrate support provided in a process chamber; (b) supplying a process gas into the process chamber to form a layer on an inner surface of the deep concave structure; and (c) discharging by-products generated in an inner space of the deep concave structure in (b) by setting a pressure of a process space defined by the process chamber to be lower than a pressure of the inner space of the deep concave structure.
1. A method of manufacturing a semiconductor device comprising:
(a) placing a substrate comprising a deep concave structure constituted by at least an upper portion and a lower portion on a substrate support provided in a process chamber;
(b) supplying a process gas into the process chamber to form a layer on an inner surface of the deep concave structure; and
(c) discharging by-products generated in an inner space of the deep concave structure in (b) by setting a pressure of a process space defined by the process chamber to be lower than a pressure of the inner space of the deep concave structure.
2. The method of claim 1 , wherein an inner atmosphere of the process chamber is exhausted from the process chamber while supplying an inert gas in (c).
3. The method of claim 2 , wherein a supply amount of the inert gas in (b) is less than that of the inert gas in (c).
4. The method of claim 3 , wherein (c) comprises:
(c-1) purging the by-products; and
(c-2) purging the by-products performed after (c-1), wherein a pressure of the process chamber in (c-2) is lower than that of the process chamber in (c-1).
5. The method of claim 4 , wherein the inner atmosphere of the process chamber is exhausted from the process chamber while supplying the inert gas to the process chamber in (c-1).
6. The method of claim 5 , wherein the process chamber is in communication with at least two inert gas supply pipes provided with at least two valves in a manner that at least one valve among the at least two valves is provided at each of the at least two inert gas supply pipes, and
each of the at least two valves is opened in (c-1), and one of the at least two valves is opened whereas other of the at least two valves is closed in (c-2).
7. The method of claim 4 , wherein the process chamber is in communication with at least two inert gas supply pipes provided with at least two valves in a manner that at least one valve among the at least two valves is provided at each of the at least two inert gas supply pipes, and
each of the at least two valves is opened in (c-1), and one of the at least two valves is opened whereas other of the at least two valves is closed in (c-2).
8. The method of claim 2 , wherein (c) comprises:
(c-1) purging the by-products; and
(c-2) purging the by-products performed after (c-1), wherein a pressure of the process chamber in (c-2) is lower than that of the process chamber in (c-1).
9. The method of claim 8 , wherein the inner atmosphere of the process chamber is exhausted from the process chamber while supplying the inert gas to the process chamber in (c-1).
10. The method of claim 9 , wherein the process chamber is in communication with at least two inert gas supply pipes provided with at least two valves in a manner that at least one valve among the at least two valves is provided at each of the at least two inert gas supply pipes, and
each of the at least two valves is opened in (c-1), and one of the at least two valves is opened whereas other of the at least two valves is closed in (c-2).
11. The method of claim 8 , wherein the process chamber is in communication with at least two inert gas supply pipes provided with at least two valves in a manner that at least one valve among the at least two valves is provided at each of the at least two inert gas supply pipes, and
each of the at least two valves is opened in (c-1), and one of the at least two valves is opened whereas other of the at least two valves is closed in (c-2).
12. The method of claim 1 , wherein a supply amount of an inert gas in (b) is less than that of the inert gas in (c).
13. The method of claim 12 , wherein (c) comprises:
(c-1) purging the by-products; and
(c-2) purging the by-products performed after (c-1), wherein a pressure of the process chamber in (c-2) is lower than that of the process chamber in (c-1).
14. The method of claim 13 , wherein an inner atmosphere of the process chamber is exhausted from the process chamber while supplying the inert gas to the process chamber in (c-1).
15. The method of claim 14 , wherein the process chamber is in communication with at least two inert gas supply pipes provided with at least two valves in a manner that at least one valve among the at least two valves is provided at each of the at least two inert gas supply pipes, and
each of the at least two valves is opened in (c-1), and one of the at least two valves is opened whereas other of the at least two valves is closed in (c-2).
16. The method of claim 13 , wherein the process chamber is in communication with at least two inert gas supply pipes provided with at least two valves in a manner that at least one valve among the at least two valves is provided at each of the at least two inert gas supply pipes, and
each of the at least two valves is opened in (c-1), and one of the at least two valves is opened whereas other of the at least two valves is closed in (c-2).
17. The method of claim 1 , wherein (c) comprises: (c-1) purging the by-products; and (c-2) purging the by-products performed after (c-1), wherein a pressure of the process chamber in (c-2) is lower than that of the process chamber in (c-1).
18. The method of claim 17 , wherein the inner atmosphere of the process chamber is exhausted from the process chamber while supplying the inert gas to the process chamber in (c-1).
19. The method of claim 18 , wherein the process chamber is in communication with at least two inert gas supply pipes provided with at least two valves in a manner that at least one valve among the at least two valves is provided at each of the at least two inert gas supply pipes, and
each of the at least two valves is opened in (c-1), and one of the at least two valves is opened whereas other of the at least two valves is closed in (c-2).