Solid-state imaging element and method for manufacturing the same, and electronic device
The present technology relates to a solid-state imaging element that is capable of suppressing occurrence of flares, ghosts, and color-mixing, and is capable of suppressing occurrence of stains caused by moisture and a method for manufacturing the same, and an electronic device. The solid-state imaging element includes a pixel in which a single-layered anti-reflective film is formed on a surface of a microlens and a pixel in which a double-layered anti-reflective film is formed on the surface of the microlens. For example, the present technology is applicable to a rear surface irradiation-type solid-state imaging element.
1. A solid-state imaging element, comprising:
a plurality of pixels, wherein each of the plurality of pixels includes:
a photoelectric conversion unit configured to perform photoelectric conversion in correspondence with incident light; and
a microlens configured to condense the incident light to the photoelectric conversion unit, wherein
a first pixel of the plurality of pixels has a multi-layered anti-reflective film on a surface of the microlens,
a second pixel of the plurality of pixels has a single-layered anti-reflective film on the surface of the microlens,
the second pixel is obtained based on removal of a first anti-reflective film of the multi-layered anti-reflective film from the first pixel, and
a moisture permeability of the first anti-reflective film is lower than a moisture permeability of the single-layered anti-reflective film.
2. The solid-state imaging element according to claim 1 , wherein at least one-fourth pixels of the plurality of pixels include the single-layered anti-reflective film on the surface of the microlens.
3. The solid-state imaging element according to claim 1 , wherein
each of the plurality of pixels further includes a color filter between the photoelectric conversion unit and the microlens,
each of a set of pixels of the plurality of pixels has a specific color, and
each of the set of pixels includes the single-layered anti-reflective film on the surface of the microlens.
4. The solid-state imaging element according to claim 3 , wherein
the color filter is in a Bayer array, and
each of the set of pixels is set to green (G).
5. The solid-state imaging element according to claim 3 , wherein
the color filter is in a Bayer array, and
each of the set of pixels is set to blue (B).
6. The solid-state imaging element according to claim 1 , wherein
the multi-layered anti-reflective film includes the first anti-reflective film and a second anti-reflective film,
the single-layered anti-reflective film includes the second anti-reflective film,
the first anti-reflective film is one of a silicon nitride film or a silicon oxynitride film, and
the second anti-reflective film is one of a silicon oxide film or a silicon oxycarbide film.
7. The solid-state imaging element according to claim 6 , wherein
a first refractive index of the first anti-reflective film is higher than a second refractive index of the microlens, and
the second refractive index of the microlens is higher than a third refractive index of the second anti-reflective film.
8. The solid-state imaging element according to claim 1 , wherein a type of the solid-state imaging element is a rear surface irradiation type.
9. A method for manufacturing a solid-state imaging element, the method comprising:
forming, in each of a plurality of pixels, a microlens that condenses incident light to a photoelectric conversion unit;
forming a multi-layered anti-reflective film on a surface of the microlens in a first pixel of the plurality of pixels; and
forming a single-layered anti-reflective film on the surface of the microlens in a second pixel of the plurality of pixels, wherein
the single-layered anti-reflective film is formed based on a removal of an anti-reflective film of the multi-layered anti-reflective film from the first pixel, and
a moisture permeability of the anti-reflective film is lower than a moisture permeability of the single-layered anti-reflective film.
10. An electronic device, comprising:
a solid-state imaging element comprises a plurality of pixels, wherein each of the plurality of pixels includes:
a photoelectric conversion unit configured to perform photoelectric conversion in correspondence with incident light; and
a microlens configured to condense the incident light to the photoelectric conversion unit, wherein
a first pixel of the plurality of pixels has a multi-layered anti-reflective film on a surface of the microlens,
a second pixel of the plurality of pixels has a single-layered anti-reflective film on the surface of the microlens,
the second pixel is obtained based on removal of an anti-reflective film of the multi-layered anti-reflective film from the first pixel, and
a moisture permeability of the anti-reflective film is lower than a moisture permeability of the single-layered anti-reflective film.
11. A solid-state imaging element, comprising:
a plurality of pixels, wherein each of the plurality of pixels includes:
a photoelectric conversion unit configured to perform photoelectric conversion in correspondence with incident light; and
a microlens configured to condense the incident light to the photoelectric conversion unit, wherein
a first pixel of the plurality of pixels has a multi-layered anti-reflective film on a surface of the microlens,
a second pixel of the plurality of pixels has a single-layered anti-reflective film on the surface of the microlens, and
a type of the solid-state imaging element is a rear surface irradiation type.