Memory and logic device-integrated soft electronic system

1. A memory- and logic device-integrated soft electronic system, comprising:

a substrate;

a plurality of bar-type first electrodes stacked on the substrate;

a resistance-variable material layer coated on the plurality of bar-type first electrodes; and

a plurality of bar-shaped second electrodes stacked on the resistance-variable material layer,

wherein the first electrode and the second electrode cross each other,

wherein the resistance-variable material layer comprises a polymer-deposited insulating film, and

wherein the polymer comprises any one selected from a group consisting of poly(cyclosiloxane), poly(furfuryl methacrylate), poly(isobornyl acrylate), poly(1,3,5-trimethyl-1,3,5-trivinylcyclotrisiloxane), poly(ethylene glycol dimethacrylate) and graphene oxide.

2. The memory- and logic device-integrated soft electronic system according to claim 1 , wherein the resistance-variable material layer is coated on an entire surface of the first electrode, and the second electrode is provided on the resistance-variable material layer.

3. The memory- and logic device-integrated soft electronic system according to claim 1 , wherein the memory- and logic device-integrated soft electronic system configures a logic gate in accordance with the memristor-aided logic (MAGIC) method.

4. The memory- and logic device-integrated soft electronic system according to claim 3 , wherein the logic gate is NOT, NOR, OR, AND or NAND.

5. The memory- and logic device-integrated soft electronic system according to claim 1 , wherein the first electrode and the second electrode comprises one selected from Cu, Ni, Ti, Hf, Zr, ZN, W, Co, V, Al and Pt.

6. The memory- and logic device-integrated soft electronic system according to claim 1 , wherein the substrate has a flexible property.