Semiconductor device

1. A semiconductor device, comprising:

a first electrode;

a first semiconductor region provided on the first electrode, the first semiconductor region being of a first conductivity type and being electrically connected to the first electrode;

a second semiconductor region provided on the first semiconductor region, the second semiconductor region being of a second conductivity type;

a third semiconductor region provided selectively on the second semiconductor region, the third semiconductor region being of the first conductivity type;

a conductive portion provided inside the first semiconductor region with a first insulating portion interposed;

a gate electrode separated from the conductive portion in a first direction, the first direction being from the first electrode toward the first semiconductor region,

the gate electrode including a first portion provided on the conductive portion with a second insulating portion interposed, a lower surface of the first portion being positioned higher than a lower end of an interface between the second semiconductor region and the third semiconductor region,

the gate electrode including a second portion opposing, with a gate insulating portion interposed, the first semiconductor region, the second semiconductor region, and the third semiconductor region in a second direction perpendicular to the first direction,

a position in the second direction of the second portion being between a position in the second direction of the first portion and a position in the second direction of the second semiconductor region; and

a second electrode provided on the second semiconductor region and the third semiconductor region and electrically connected to the conductive portion, the second semiconductor region, and the third semiconductor region.

2. The device according to claim 1 , wherein an upper surface of the conductive portion is positioned higher than an interface between the first semiconductor region and the second semiconductor region.

3. The device according to claim 1 , wherein an upper surface of the gate electrode is provided in a convex configuration toward the first direction.

4. The device according to claim 1 , wherein an upper surface of the first portion is positioned higher than an upper surface of the third semiconductor region.

5. The device according to claim 1 , wherein a lower surface of the second portion is tilted upward from the second portion toward the first portion.

6. The device according to claim 1 , wherein the gate electrode further includes a third portion,

a position in the second direction of the third portion is between the position in the second direction of the first portion and the position in the second direction of the second portion,

a lower surface of the third portion is positioned higher than an interface between the first semiconductor region and the second semiconductor region and positioned lower than the lower end of the interface between the second semiconductor region and the third semiconductor region, and

a length in the second direction of the second portion is shorter than a length in the second direction of the first portion and shorter than a length in the second direction of the third portion.

7. The device according to claim 1 , wherein

a portion of a lower surface of the second portion is tilted downward from the second portion toward the first portion, and

another portion of the lower surface of the second portion is positioned on the first portion side of the portion of the lower surface of the second portion and is tilted upward from the second portion toward the first portion.