Quantum shift register structures
A novel and useful controlled quantum shift register for transporting particles from one quantum dot to another in a quantum structure. The shift register incorporates a succession of qdots with tunneling paths and control gates. Applying appropriate control signals to the control gates, a particle or a split quantum state is made to travel along the shift register. The shift register also includes ancillary double interaction where two pairs of quantum dots provide an ancillary function where the quantum state of one pair is replicated in the second pair. The shift register also provides bifurcation where an access path is split into two or more paths. Depending on the control pulse signals applied, quantum dots are extended into multiple paths. Control of the shift register is provided by electric control pulses. An optional auxiliary magnetic field provides additional control of the shift register.
1. A quantum shift register, comprising:
a semiconductor substrate;
a substantially undoped continuous well constructed on said substrate;
a plurality of control gates fabricated over said well to form a plurality of qdots arranged sequentially, said plurality of control gates operative to control said plurality of qdots; and
a plurality of electric control gate pulses applied to said plurality of control gates, said control gate pulses configured to control quantum tunneling between neighboring qdots such that one or more particles within said qdots are transported from one qdot to another.
2. The shift register according to claim 1 , wherein said plurality of electric control gate pulses are generated by classic electronic circuitry.
3. The shift register according to claim 2 , wherein said classic electronic circuit comprises one or more digital to analog converters (DACs).
4. The shift register according to claim 1 , further comprising one or more quantum gates, at least one quantum gate in relatively close proximity to another quantum gate in a same or separate quantum shift register to enable quantum interaction between particles therebetween.
5. The shift register according to claim 1 , further comprising one or more quantum tunneling barriers that are controlled via appropriate application of electric control gate pulses to said control gates thereby controlling movement of said one or more particles into and out of one or more interaction qdots.
6. The shift register according to claim 1 , wherein said plurality of qdots are constructed using a semiconductor process selected from a group consisting of: a planar quantum structure using tunneling through a local depleted well and a 3D quantum structure using tunneling through a local depleted fin.
7. A quantum shift register, comprising:
a semiconductor substrate;
a plurality of qdots fabricated on said substrate and arranged sequentially;
a plurality of control gates fabricated on said substrate for controlling said plurality of qdots;
an auxiliary magnetic field covering at least said plurality of qdots; and
a plurality of electric control gate pulses applied to said control gates, said control gate pulses and said auxiliary magnetic field operative to transport one or more particles within said qdots sequentially from one qdot to another.
8. The shift register according to claim 7 , wherein said auxiliary magnetic field is generated utilizing one or more inductors.
9. The method according to claim 7 , wherein said one or more magnetic fields are generated utilizing one or more resonators.
10. The shift register according to claim 7 , wherein said plurality of electric control gate pulses are generated by classic electronic circuitry.
11. The shift register according to claim 10 , wherein said classic electronic circuit comprises one or more digital to analog converters (DACs).
12. The shift register according to claim 7 , further comprising one or more quantum gates, at least one quantum gate in relatively close proximity to another quantum gate to enable quantum interaction therebetween.
13. The shift register according to claim 7 , further comprising one or more quantum tunneling barriers that are controlled via appropriate application of electric control gate pulses to said control gates thereby controlling movement of said one or more particles into and out of one or more interaction qdots.
14. The shift register according to claim 7 , wherein said plurality of qdots are constructed using a semiconductor process selected from a group consisting of: a planar quantum structure using tunneling through a local depleted well and a 3D quantum structure using tunneling through a local depleted fin.
15. A quantum shift register method, comprising:
providing a semiconductor substrate;
fabricating a substantially updoped continuous well on said semiconductor substrate to form a plurality of qdots arranged in sequential fashion;
fabricating on said well a plurality of control gates for controlling said plurality of qdots; and
generating electric control gate pulses that when applied to said plurality of control gates effectively control quantum tunneling of one or more particles within said qdots such that said one or more particles are transported from one qdot to another.
16. The method according to claim 15 , further comprising generating an auxiliary magnetic field covering at least said plurality of qdots and operative to provide further control of said control gates such that one or more particles within said qdots are transported sequentially from one qdot to another.
17. The method according to claim 15 , wherein said electric control gate pulses are generated using classic electronic circuitry.
18. The method according to claim 17 , wherein said classic electronic circuit comprises one or more digital to analog converters (DACs).
19. The method according to claim 15 , wherein said plurality of qdots are constructed using a semiconductor process selected from a group consisting of: a planar quantum structure using tunneling through a local depleted well and a 3D quantum structure using tunneling through a local depleted fin.
20. A quantum shift register, comprising:
a semiconductor substrate;
a plurality of semiconductor fins fabricated on said semiconductor substrate;
a plurality of control gates fabricated overlapping said plurality of fins to form a plurality of quantum dots arranged sequentially, said plurality of control gates operative to control said plurality of quantum dots; and
a plurality of electric control gate pulses applied to said plurality of control gates, said control gate pulses configured to control a quantum tunneling path connecting neighboring quantum dots such that one or more particles within said quantum dots are transported from one quantum dot to another.
21. The shift register according to claim 20 , further comprising one or more quantum tunneling barriers controlled via appropriate application of electric control gate pulses to said control gates thereby controlling movement of said one or more particles into and out of one or more interaction quantum dots.
22. A quantum shift register, comprising:
a semiconductor substrate;
a well constructed on said substrate;
a plurality of control gates fabricated over said well to form at least three quantum dots arranged sequentially, said plurality of control gates operative to control said at least three quantum dots; and
a plurality of electric control gate pulses applied to said plurality of control gates, said control gate pulses configured to control quantum tunneling between neighboring quantum dots such that one or more particles within said quantum dots are transported from one quantum dot to another.