Surface potential measurement of dielectric materials in plasma
A system for voltage measurement of dielectric material in plasma includes a vacuum chamber. The system also includes an electrostatic receiver located outside of the vacuum chamber. The system also includes a conductive probe having a first terminus in contact with the dielectric material in the vacuum chamber and a second terminus in electrical communication with the electrostatic receiver. The system also includes a non-contact electrostatic voltmeter configured to measure a floating potential of the electrostatic receiver that corresponds to a dielectric potential of the dielectric material at a location in contact with the first terminus of the conductive probe.
1. A system for voltage measurement of dielectric material in plasma comprising:
a vacuum chamber;
an electrostatic receiver located outside of the vacuum chamber;
a conductive probe having a first terminus in contact with the dielectric material in the vacuum chamber and a second terminus in electrical communication with the electrostatic receiver; and
a non-contact electrostatic voltmeter configured to measure a floating potential of the electrostatic receiver that corresponds to a dielectric potential of the dielectric material at a location in contact with the first terminus of the conductive probe.
2. The system of claim 1 wherein the conductive probe is supported such that the first terminus is coplanar with an exposed surface of the dielectric material in the vacuum chamber.
3. The system of claim 2 further comprising a second conductive probe having a first terminus in contact with the dielectric material and located below the exposed surface of the dielectric material, and a second terminus in electrical communication with the electrostatic receiver.
4. The system of claim 1 wherein the electrostatic receiver includes a metal plate supported by an insulating material.
5. The system of claim 1 wherein the conductive probe includes a wire.
6. The system of claim 1 wherein the conductive probe is insulated except at the first terminus.
7. The system of claim 1 further comprising a support shelf located in the vacuum chamber, configured to support the dielectric material, and defining an opening for receiving the first terminus of the conductive probe.
8. The system of claim 1 further comprising a plasma source configured to generate plasma into the vacuum chamber.
9. The system of claim 8 wherein the plasma source is configured to direct the plasma in a direction parallel to a surface of the dielectric material.
10. The system of claim 1 further comprising the dielectric material, wherein the dielectric material includes dust grains that simulate dust in outer space.
11. A method for voltage measurement of a dielectric material in plasma comprising:
placing the dielectric material in a vacuum chamber;
positioning a conductive probe such that a first tell sinus of the conductive probe is in contact with the dielectric material;
coupling a second terminus of the conductive probe to an electrostatic receiver outside of the vacuum chamber;
generating plasma in the vacuum chamber; and
measuring a voltage of the dielectric material at the electrostatic receiver using a non-contact electrostatic voltmeter.
12. The method of claim 11 wherein positioning the conductive probe such that the first terminus of the conductive probe is in contact with the dielectric material includes positioning multiple conductive probes such that the first terminus of each of the multiple conductive probes is in contact with the dielectric material, with the first terminus of at least one of the multiple conductive probes being closer to a surface of the dielectric material than the first terminus of at least another of the multiple conductive probes.
13. The method of claim 11 wherein generating the plasma in the vacuum chamber includes directing the plasma in a direction parallel to a surface of the dielectric material.
14. The method of claim 11 wherein positioning the conductive probe such that the first terminus of the conductive probe is in contact with the dielectric material includes positioning the first terminus of the conductive probe to be coplanar with an exposed surface of the dielectric material.
15. The method of claim 11 wherein placing the dielectric material in the vacuum chamber includes positioning the dielectric material on a support shelf located in the vacuum chamber that defines an opening for receiving the conductive probe.
16. The method of claim 11 wherein the dielectric material includes dust grains that simulate dust in outer space.
17. A system for voltage measurement of dielectric material in plasma comprising:
a vacuum chamber;
a support shelf located in the vacuum chamber and configured to support the dielectric material;
a plasma source configured to generate plasma into the vacuum chamber;
an electrostatic receiver located outside of the vacuum chamber;
a first conductive probe having a first terminus in contact with the dielectric material in the vacuum chamber and a second terminus in electrical communication with the electrostatic receiver; and
a non-contact electrostatic voltmeter configured to measure a floating potential of the electrostatic receiver that corresponds to a dielectric potential of the dielectric material at a location in contact with the first terminus of the first conductive probe.
18. The system of claim 17 wherein the support shelf defines an opening for receiving the first terminus of the first conductive probe.
19. The system of claim 17 wherein the electrostatic receiver includes a metal plate supported by an insulating material.
20. The system of claim 17 further comprising a second conductive probe having a first terminus in contact with the dielectric material and located below an exposed surface of the dielectric material, and a second terminus in electrical communication with the electrostatic receiver, wherein the first terminus of the first conductive probe is coplanar with the exposed surface of the dielectric material.