Pattern forming method, resist pattern, method for manufacturing electronic device, and composition for forming upper layer film
Provided are a pattern forming method including a step of applying a composition for forming an upper layer film, containing a resin having a C log P(Poly) of 3.0 or more and at least one compound selected from the group consisting of (A1) to (A4) described in the specification onto a resist film to form an upper layer film, a step of exposing the resist film, and a step of developing the exposed resist film with a developer including an organic solvent; a resist pattern formed by the pattern forming method; a method for manufacturing an electronic device, including the pattern forming method; and the composition for forming an upper layer film.
1. A pattern forming method comprising:
(a) a step of forming a resist film on a substrate;
(b) a step of applying a composition for forming an upper layer film onto the resist film to form an upper layer film;
(c) a step of exposing the resist film; and
(d) a step of developing the exposed resist film with a developer including an organic solvent,
wherein the composition for forming an upper layer film contains a resin having a C log P(Poly) of 4.0 or more and at least one compound selected from the group consisting of (A1), (A2), (A3), and (A4),
wherein (A1) is a basic compound or a base generator,
(A2) is a compound selected from the group consisting of a compound containing an ether bond, a compound containing a thioether bond, a compound containing a hydroxyl group, a compound containing a thiol group, a compound containing a carbonyl bond, and a compound containing an ester bond,
(A3) is an ionic compound, and
(A4) is a compound having a radical trapping group.
2. The pattern forming method according to claim 1 ,
wherein the step (b) includes heating the composition for forming an upper layer film applied onto the resist film at 100° C. or higher.
3. The pattern forming method according to claim 1 ,
wherein the resin having a C log P(Poly) of 4.0 or more contains a repeating unit obtained by the polymerization of monomers represented by General Formula (2),
in General Formula (2), R represents an alkyl group having 5 to 20 carbon atoms, a cycloalkyl group having 5 to 20 carbon atoms, or an aryl group.
4. The pattern forming method according to claim 1 ,
wherein the resin having a C log P(Poly) of 4.0 or more contains at least one repeating unit having 4 methyl groups.
5. The pattern forming method according to claim 1 ,
wherein the molecular weight of at least one compound selected from the group consisting of (A1), (A2), (A3), and (A4) above is 100 to 3,000.
6. A resist pattern formed by the pattern forming method according to claim 1 .
7. A method for manufacturing an electronic device, comprising the pattern forming method according to claim 1 .
8. A composition for forming an upper layer film,
wherein the composition for forming an upper layer film contains a resin having a C log P(Poly) of 4.0 or more and at least one compound selected from the group consisting of (A1), (A2), (A3), and (A4),
wherein (A1) is a basic compound or a base generator,
(A2) is a compound selected from the group consisting of a compound containing an ether bond, a compound containing a thioether bond, a compound containing a hydroxyl group, a compound containing a thiol group, a compound containing a carbonyl bond, and a compound containing an ester bond,
(A3) is an ionic compound, and
(A4) is a compound having a radical trapping group.
9. A pattern forming method comprising:
(a) a step of forming a resist film on a substrate;
(b) a step of applying a composition for forming an upper layer film onto the resist film to form an upper layer film;
(c) a step of exposing the resist film; and
(d) a step of developing the exposed resist film with a developer including an organic solvent,
wherein the composition for forming an upper layer film contains a resin having a C log P(Poly) of 3.0 or more and at least one compound selected from the group consisting of (A2), (A3), and (A4),
wherein (A2) is a compound selected from the group consisting of a compound represented by formula (A-2-1), a compound represented by formula (A-2-2), a compound represented by formula (A-2-3), a compound represented by formula (A-2-4), a compound represented by formula (A-2-5), a compound represented by formula (A-2-6), a compound represented by formula (A-2-7), and a compound represented by formula (A-2-8),
A-2
(A3) is an ionic compound selected from the group consisting of a compound represented by formula (A-3-1), a compound represented by formula (A-3-2), and a compound represented by formula (A-3-3), and
A-3
(A4) is a compound having a radical trapping group.
10. A pattern forming method comprising:
(a) a step of forming a resist film on a substrate;
(b) a step of applying a composition for forming an upper layer film onto the resist film to form an upper layer film;
(c) a step of exposing the resist film; and
(d) a step of developing the exposed resist film with a developer including an organic solvent,
wherein the composition for forming an upper layer film contains a resin having a ClogP(Poly) of 3.0 or more, at least one compound represented by (A4), and optionally at least one compound selected from the group consisting of (A1), (A2), and (A3),
wherein (A1) is a basic compound or a base generator,
(A2) is a compound selected from the group consisting of a compound containing an ether bond, a compound containing a thioether bond, a compound containing a hydroxyl group, a compound containing a thiol group, a compound containing a carbonyl bond, and a compound containing an ester bond,
(A3) is an ionic compound, and
(A4) is a compound having a radical trapping group.
11. A composition for forming an upper layer film,
wherein the composition for forming an upper layer film contains a resin having a C log P(Poly) of 3.0 or more and at least one compound selected from the group consisting of (A2), (A3), and (A4),
wherein (A2) is a compound selected from the group consisting of a compound represented by formula (A-2-1), a compound represented by formula (A-2-2), a compound represented by formula (A-2-3), a compound represented by formula (A-2-4), a compound represented by formula (A-2-5), a compound represented by formula (A-2-6), a compound represented by formula (A-2-7), and a compound represented by formula (A-2-8),
A-2
(A3) is an ionic compound selected from the group consisting of a compound represented by formula (A-3-1), a compound represented by formula (A-3-2), and a compound represented by formula (A-3-3), and
A-3
(A4) is a compound having a radical trapping group.
12. A composition for forming an upper layer film,
wherein the composition for forming an upper layer film contains a resin having a C log P(Poly) of 3.0 or more, at least one compound represented by (A4), and optionally at least one compound selected from the group consisting of (A1), (A2), and (A3),
wherein (A1) is a basic compound or a base generator,
(A2) is a compound selected from the group consisting of a compound containing an ether bond, a compound containing a thioether bond, a compound containing a hydroxyl group, a compound containing a thiol group, a compound containing a carbonyl bond, and a compound containing an ester bond,
(A3) is an ionic compound, and
(A4) is a compound having a radical trapping group.