Multilayer capacitor
A multilayer capacitor includes: a body including dielectric layers and first and second internal electrodes alternately disposed with respective dielectric layers interposed therebetween; and first and second external electrodes disposed on the body to be connected to the first and second internal electrodes, respectively. The dielectric layer contains BaTiO 3 as a main ingredient, and includes a plurality of grains and grain boundaries formed between adjacent grains, the grain boundary containing Si in an amount of 8.0 to 18.0 wt % and Al and Mg in a total content of 2.0 to 6.0 wt %.
1. A multilayer capacitor comprising:
a body including dielectric layers and first and second internal electrodes alternately disposed with respective dielectric layers interposed therebetween; and
first and second external electrodes disposed on the body to be connected to the first and second internal electrodes, respectively,
wherein at least one dielectric layer among the dielectric layers contains BaTiO 3 as a main ingredient, and includes a plurality of grains and grain boundaries arranged between adjacent grains,
at least one grain boundary among the plurality of grain boundaries contains Si in a content of 8.0 to 18.0 wt % and Al and Mg in a total content of 2.0 to 6.0 wt %, based on a total content of oxides in the at least one grain boundary, and
wherein the at least one grain boundary has a thickness of 1.3 nm or more.
2. The multilayer capacitor of claim 1 , wherein a content of Mg is 0.2 to 1.1 wt %, and a content of Al is 1.5 to 5.0 wt %, based on the total content of oxides in the at least one grain boundary.
3. The multilayer capacitor of claim 1 , wherein the at least one grain boundary further contains Ba in an amount of 40 to 65 wt % and Ti in an amount of 17 to 40 wt %, based on the total content of oxides in the at least one grain boundary.
4. The multilayer capacitor of claim 1 , wherein the at least one grain boundary further contains Ba and Ti, and a ratio of a content of Ba to a content of Ti measured in terms of wt % is 2.00 or more.
5. The multilayer capacitor of claim 1 , wherein the at least one grain boundary further contains at least one selected from V, Mn, Ni, or Zr.
6. The multilayer capacitor of claim 1 , wherein the at least one dielectric layer has a thickness of 0.9 μm or more.
7. The multilayer capacitor of claim 1 , wherein an average size of the plurality of grains measured in terms of an equivalent-circle diameter is 80 to 200 nm.
8. The multilayer capacitor of claim 1 , wherein insulation resistance of the multilayer capacitor is 1.0*10{circumflex over ( )}7Ω*cm or less, and a withstand voltage of the multilayer capacitor is 80V/μm or less.
9. A dielectric composition comprising:
a base material including BaTiO 3 as a main ingredient, and including a plurality of grains and grain boundaries arranged between adjacent grains,
wherein at least one grain boundary among the plurality of grain boundaries contains Si in a content of 8.0 to 18.0 wt % and Al and Mg in a total content of 2.0 to 6.0 wt %, based on a total content of oxides in the at least one grain boundary, and
wherein the at least one grain boundary has a thickness of 1.3 nm or more.
10. The dielectric composition of claim 9 , wherein a content of Mg is 0.2 to 1.1 wt %, and a content of Al is 1.5 to 5.0 wt %, based on the total content of oxides in the at least one grain boundary.
11. The dielectric composition of claim 9 , wherein the at least one grain boundary further contains Ba in an amount of 40 to 65 wt % and Ti in an amount of 17 to 40 wt %, based on the total content of oxides in the at least one grain boundary.
12. The dielectric composition of claim 9 , wherein the at least one grain boundary further contains Ba and Ti, and a ratio of a content of Ba to a content of Ti measured in terms of wt % is 2.00 or more.
13. The dielectric composition of claim 9 , wherein the at least one grain boundary further contains at least one selected from V, Mn, Ni, or Zr.
14. The dielectric composition of claim 9 , wherein an average size of the plurality of grains measured in terms of an equivalent-circle diameter is 80 to 200 nm.
15. The dielectric composition of claim 9 , wherein insulation resistance of the dielectric composition is 1.0*10{circumflex over ( )}7Ω*cm or less, and a withstand voltage of the dielectric composition is 80V/μm or less.