IP Library › Granted Patent US 10,854,565
Granted Patent B2
US 10,854,565 · App. 16/137,774 · Granted Dec 1, 2020

Chip package structure with bump

Inventors: Wei-Yu Chen (New Taipei, TW); Li-Hsien Huang (Zhubei, TW); An-Jhih Su (Taoyuan, TW); Hsien-Wei Chen (Hsinchu, TW)
Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
H01L24/16H01L21/486H01L21/54H01L21/565H01L23/3114H01L23/49827H01L24/01H01L24/11H01L24/18H01L25/0657H01L25/50H01L2224/02372H01L2224/11849H01L2224/16013H01L2224/16104H01L2224/16221H01L2225/06517H01L2225/06541
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Quick Facts
Patent No.
US 10,854,565
App. No.
16/137,774
Granted
Dec 1, 2020
Kind
B2
Abstract

A chip package structure is provided. The chip package structure includes a redistribution structure and a first chip structure over the redistribution structure. The chip package structure also includes a first solder bump between the redistribution structure and the first chip structure and a first molding layer surrounding the first chip structure. The chip package structure further includes a second chip structure over the first chip structure and a second molding layer surrounding the second chip structure. In addition, the chip package structure includes a third molding layer surrounding the first molding layer, the second molding layer, and the first solder bump. A portion of the third molding layer is between the first molding layer and the redistribution structure.

Claims (48)

1. A chip package structure, comprising:

a redistribution structure;

a first chip structure over the redistribution structure;

a first solder bump between the redistribution structure and the first chip structure;

a first molding layer surrounding the first chip structure;

a second chip structure over the first chip structure;

a second molding layer surrounding the second chip structure; and

a third molding layer surrounding the first molding layer, the second molding layer, and the first solder bump, wherein the third molding layer is in direct contact with the first molding layer and the first solder bump, and is disposed at least partially between the first molding layer and the redistribution structure.

2. The chip package structure as claimed in claim 1 , further comprising:

a conductive pillar between the first chip structure and the first solder bump.

3. The chip package structure as claimed in claim 2 , wherein the conductive pillar is in direct contact with the first chip structure and the first solder bump.

4. The chip package structure as claimed in claim 2 , wherein the first solder bump is made of a first conductive material, the conductive pillar is made of a second conductive material, and a first melting point of the second conductive material is higher than a second melting point of the first conductive material.

5. The chip package structure as claimed in claim 2 , wherein a maximum width of the first solder bump is greater than a maximum width of the conductive pillar.

6. The chip package structure as claimed in claim 2 , wherein the third molding layer is in direct contact with the conductive pillar, the redistribution structure, and the second molding layer.

7. The chip package structure as claimed in claim 1 , further comprising:

a conductive via structure passing through the first molding layer and electrically connected to the second chip structure;

a second solder bump connecting the redistribution structure; and

a conductive pillar between the conductive via structure and the second solder bump.

8. The chip package structure as claimed in claim 7 , further comprising:

a redistribution layer between the first molding layer and a portion of the third molding layer that is between the first chip structure and the first solder bump, wherein the conductive via structure is connected to the redistribution layer.

9. The chip package structure as claimed in claim 1 , wherein a sidewall of the third molding layer and a sidewall of the redistribution structure are substantially coplanar, a top surface of the third molding layer, a top surface of the second chip structure, and a top surface of the second molding layer are substantially coplanar, and a bottom surface of the first chip structure and a bottom surface of the first molding layer are substantially coplanar.

10. A chip package structure, comprising:

a first chip structure between a second chip structure and a redistribution structure;

a first molding layer surrounding the first chip structure;

a second molding layer surrounding the second chip structure;

conductive bumps between the redistribution structure and the first chip structure; and

a third molding layer extending over sidewalls of the first molding layer and the second molding layer, wherein a bottom surface of the third molding layer is between the redistribution structure and a bottom surface of the first molding layer.

11. The chip package structure as claimed in claim 10 , further comprising a first redistribution layer between the first molding layer and a portion of the third molding layer.

12. The chip package structure as claimed in claim 11 , further comprising a second redistribution layer between the second molding layer and the first molding layer.

13. The chip package structure as claimed in claim 12 , wherein the first redistribution layer is substantially as wide as the second redistribution layer.

14. The chip package structure as claimed in claim 10 , wherein a top surface of the third molding layer, a top surface of the second chip structure, and a top surface of the second molding layer are substantially coplanar.

15. A chip package structure, comprising:

a redistribution substrate;

a first chip structure over the redistribution substrate;

a first molding layer surrounding the first chip structure, wherein the first molding layer and the first chip structure are spaced apart from the redistribution substrate, and the first molding layer is in direct contact with the first chip structure;

a second chip structure over the first chip structure;

a second molding layer surrounding the second chip structure;

a conductive via structure passing through the first molding layer and electrically connected to the second chip structure; and

a third molding layer surrounding the first molding layer and the second molding layer, wherein the third molding layer is partially between the first molding layer and the redistribution substrate and partially between the first chip structure and the redistribution substrate.

16. The chip package structure as claimed in claim 15 , further comprising:

a first redistribution layer between the first molding layer and the third molding layer and between the first chip structure and the third molding layer, wherein the conductive via structure is connected to the first redistribution layer.

17. The chip package structure as claimed in claim 16 , further comprising:

a second redistribution layer between the second molding layer and the first molding layer and between the second chip structure and the first chip structure, wherein the conductive via structure is further connected to the second redistribution layer.

18. The chip package structure as claimed in claim 17 , wherein a sidewall of the first redistribution layer, a sidewall of the second redistribution layer, a sidewall of the first molding layer, and a sidewall of the second molding layer are substantially coplanar.

19. The chip package structure as claimed in claim 15 , wherein a top surface of the third molding layer, a top surface of the second chip structure, and a top surface of the second molding layer are substantially coplanar.

20. The chip package structure as claimed in claim 15 , further comprising:

a first solder bump arranged between and electrically connecting the redistribution substrate and the first chip structure; and

a second solder bump arranged between and electrically connecting the conductive via structure and the redistribution substrate.

Continuity (3)
Continuation 15857976 · Dec 29, 2017
Division 15269514 · Sep 19, 2016
Related Publication 20190027454A1 · Jan 24, 2019
Cited By (1)
US 12,218,104