Power amplifier circuit
A power amplifier circuit amplifies a radio-frequency signal in a transmit frequency band. The power amplifier circuit includes an amplifier, a bias circuit, and an impedance circuit. The amplifier amplifies power of a radio-frequency signal and outputs an amplified signal. The impedance circuit is connected between a signal input terminal of the amplifier and a bias-current output terminal of the bias circuit and has frequency characteristics in which attenuation is obtained in the transmit frequency band. The impedance circuit includes first and second impedance circuits. The first impedance circuit is connected to the signal input terminal. The second impedance circuit is connected between the first impedance circuit and the bias-current output terminal.
1. A power amplifier circuit comprising:
an amplifier configured to amplify power of a radio-frequency signal in a transmit frequency band and to output an amplified signal;
a bias circuit; and
an impedance circuit that is connected between a signal input terminal of the amplifier and a bias-current output terminal of the bias circuit, and that is configured to attenuate signals having frequencies in the transmit frequency band,
wherein the impedance circuit comprises:
a first impedance circuit connected to the signal input terminal, and
a second impedance circuit connected between the first impedance circuit and the bias-current output terminal,
wherein the first impedance circuit or the second impedance circuit is an LC parallel resonance circuit comprising an inductive element and a capacitive element disposed in parallel with each other between the signal input terminal and the bias-current output terminal, and
wherein the other of the first impedance circuit or the second impedance circuit is an LC series resonance circuit comprising an inductive element and a capacitive element connected in series with each other between the signal input terminal and a reference potential, or connected between the bias-current output terminal and a reference potential.
2. The power amplifier circuit according to claim 1 , wherein the attenuation obtained by the impedance circuit is equal to or greater than 10 dB.
3. The power amplifier circuit according to claim 1 , wherein a resonant frequency of the LC parallel resonance circuit is within the transmit frequency band.
4. The power amplifier circuit according to claim 1 , wherein:
a resonant frequency of the LC parallel resonance circuit is different than a resonant frequency of the LC series resonance circuit; and
the resonant frequency of the LC parallel resonance circuit or the resonant frequency of the LC series resonance circuit is within the transmit frequency band and is less than a center frequency of the transmit frequency band, and the other of the resonant frequency of the LC parallel resonance circuit or the resonant frequency of the LC series resonance circuit is within the transmit frequency band and is greater than the center frequency of the transmit frequency band.
5. The power amplifier circuit according to claim 4 , wherein the resonant frequency of the LC parallel resonance circuit and the resonant frequency of the LC series resonance circuit are within a frequency band having a bandwidth that is ½ or less than a bandwidth of the transmit frequency band.
6. The power amplifier circuit according to claim 1 , wherein a circuit configuration of the first impedance circuit is different than a circuit configuration of the second impedance circuit.
7. The power amplifier circuit according to claim 1 , wherein:
the power amplifier circuit comprises a plurality of the amplifiers, a plurality of the bias circuits, a plurality of the first impedance circuits, and a plurality of the second impedance circuits; and
the plurality of amplifiers are connected to each other in multiple stages via at least one coupling capacitor.
8. The power amplifier circuit according to claim 1 , wherein at least the amplifier, the bias circuit, the first impedance circuit, and the second impedance circuit are formed on a single semiconductor chip.
9. A power amplifier circuit comprising:
an amplifier configured to amplify power of a radio-frequency signal in a transmit frequency band and to output an amplified signal;
a bias circuit; and
an impedance circuit that is connected between a signal input terminal of the amplifier and a bias-current output terminal of the bias circuit, and that is configured to attenuate signals having frequencies in the transmit frequency band, wherein:
the impedance circuit comprises:
a first impedance circuit connected to the signal input terminal, and
a second impedance circuit connected between the first impedance circuit and the bias-current output terminal,
the first impedance circuit or the second impedance circuit is an LC parallel resonance circuit comprising an inductive element and a capacitive element disposed in parallel with each other between the signal input terminal and the bias-current output terminal, and
the other of the first or second impedance circuit is a notch filter circuit comprising first and second T circuits disposed in parallel with each other between the signal input terminal and the bias-current output terminal,
the first T circuit comprises:
two resistive elements disposed in series with each other between the signal input terminal and the bias-current output terminal, and
a capacitive element connected between a reference potential and a node between the two resistive elements, and
the second T circuit comprises:
two capacitive elements connected in series with each other and in parallel with the two resistive elements, and
a resistive element connected between the reference potential and a node between the two capacitive elements.
10. The power amplifier circuit according to claim 9 , wherein a center frequency of the notch filter circuit is within the transmit frequency band.
11. The power amplifier circuit according to claim 10 , wherein:
a resonant frequency of the LC parallel resonance circuit is different than the center frequency of the notch filter circuit, and
the resonant frequency or the center frequency is within the transmit frequency band and lower than a center frequency of the transmit frequency band, and the other of the resonant frequency or the center frequency is within the transmit frequency band and is greater than the center frequency of the transmit frequency band.
12. The power amplifier circuit according to claim 11 , wherein the resonant frequency of the LC parallel resonance circuit and the center frequency of the notch filter circuit are within a frequency band having a bandwidth that is ½ or less than a bandwidth of the transmit frequency band.
13. A power amplifier circuit comprising:
an amplifier configured to amplify power of a radio-frequency signal in a transmit frequency band, and to output an amplified signal;
a bias circuit; and
an impedance circuit that is connected between a signal input terminal of the amplifier and a bias-current output terminal of the bias circuit, and that is configured to attenuate signals having frequencies in the transmit frequency band, wherein:
the impedance circuit comprises:
first and second inductive elements connected in series with each other between the signal input terminal and the bias-current output terminal,
a first capacitive element connected in parallel with both the first and second inductive elements, and
a second capacitive element connected between a reference potential and a node between the first and second inductive elements,
the first inductive element, the second inductive element, and the first capacitive element form an LC parallel resonance circuit, and
the first inductive element, the second inductive element, and the second capacitive element form an LC low-pass filter circuit.
14. The power amplifier circuit according to claim 13 , wherein:
a resonant frequency of the LC parallel resonance circuit is within the transmit frequency band; and
a cutoff frequency of the LC low-pass filter circuit is within a frequency band that is lower than the transmit frequency band.
15. The power amplifier circuit according to claim 13 , wherein:
the power amplifier circuit comprises a plurality of the amplifiers, a plurality of the bias circuits, and a plurality of the impedance circuits; and
the plurality of amplifiers are connected to each other in multiple stages via at least one coupling capacitor.
16. The power amplifier circuit according to claim 14 , wherein:
the power amplifier circuit comprises a plurality of the amplifiers, a plurality of the bias circuits, and a plurality of the impedance circuits; and
the plurality of amplifiers are connected to each other in multiple stages via at least one coupling capacitor.
17. The power amplifier circuit according to claim 13 , wherein at least the amplifier and the bias circuit are formed on a single semiconductor chip.
18. The power amplifier circuit according to claim 14 , wherein at least the amplifier and the bias circuit are formed on a single semiconductor chip.