IP Library › Granted Patent US 10,859,899
Granted Patent B2
US 10,859,899 · App. 16/050,125 · Granted Dec 8, 2020

Wavelength conversion element, method for producing wavelength conversion element, light source device, and projector

Inventors: Kunihiko Takagi (Okaya, JP); Kunihiko Yano (Shiojiri, JP); Tomohiro Yokoo (Matsumoto, JP); Wataru Yasumatsu (Azumino, JP); Tetsuo Shimizu (Matsumoto, JP); Shinichi Yotsuya (Chino, JP); Koya Shiratori (Matsumoto, JP)
Assignee: SEIKO EPSON CORPORATION
G03B21/204C03C8/24C03C17/3618C03C17/3644C03C17/3649C03C17/3657C03C27/00C03C2218/152
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Quick Facts
Patent No.
US 10,859,899
App. No.
16/050,125
Granted
Dec 8, 2020
Kind
B2
Abstract

A wavelength conversion element includes a wavelength conversion layer which has a first face on which an excitation light is incident and a second face facing the first face, a first layer which is provided facing the second face and contains a first inorganic oxide, a second layer which is provided facing the first layer and contains a first metal or a second inorganic oxide that is different from the first inorganic oxide, and a third layer which is provided facing the second layer, contains either silver or aluminum, and reflects the excitation light or a light obtained by wavelength conversion of the excitation light by the wavelength conversion layer.

Claims (55)

1. A wavelength conversion element, comprising:

a wavelength conversion layer which has a first face on which an excitation light is incident and a second face facing the first face;

a first layer which is provided facing the second face and contains a first inorganic oxide;

a second layer which is provided facing the first layer and contains a first metal or a second inorganic oxide that is different from the first inorganic oxide; and

a third layer which is provided facing the second layer, contains either silver or aluminum, and reflects the excitation light or a light obtained by wavelength conversion of the excitation light by the wavelength conversion layer, wherein

the wavelength conversion layer includes a pore inside,

the second face has a recess, and

a part of the first layer is provided in the recess.

2. The wavelength conversion element according to claim 1 , further comprising:

a fourth layer which is provided facing the third layer and contains the first metal or a second metal that is different from the first metal; and

a fifth layer which is provided facing the fourth layer and contains the first inorganic oxide or the second inorganic oxide.

3. The wavelength conversion element according to claim 2 , wherein

the wavelength conversion element further comprises a substrate, and

the fifth layer and the substrate are bonded to each other by a bonding material provided between the fifth layer and the substrate.

4. The wavelength conversion element according to claim 2 , further comprising a sixth layer which contains the first metal or the second inorganic oxide between the third layer and the fourth layer.

5. The wavelength conversion element according to claim 4 , wherein

the first metal of the sixth layer is at least one metal selected from Al, Ni, Ti, W, and Nb.

6. The wavelength conversion element according to claim 4 , wherein

the second inorganic oxide of the sixth layer is an electrically conductive oxide material or an amorphous electrically conductive oxide.

7. The wavelength conversion element according to claim 1 , wherein

the first metal of the second layer is at least one metal selected from Al, Ni, Ti, W, and Nb.

8. The wavelength conversion element according to claim 1 , wherein

the second inorganic oxide of the second layer is an electrically conductive oxide material or an amorphous electrically conductive oxide.

9. A light source device, comprising:

the wavelength conversion element according to claim 1 ; and

a light source which emits the excitation light.

10. A projector, comprising:

the light source device according to claim 9 ;

a light modulator which modulates a light from the light source device in accordance with image information to form an image light; and

a projection optical system which projects the image light.

11. A wavelength conversion element, comprising:

a wavelength conversion layer which has a first face on which an excitation light is incident and a second face facing the first face;

a first layer which is provided facing the second face and contains a first inorganic oxide;

a second layer which is provided facing the first layer and contains tin oxide, the first layer being provided between the second face and the second layer; and

a third layer which is provided facing the second layer, contains either silver or aluminum, and reflects the excitation light or a light obtained by wavelength conversion of the excitation light by the wavelength conversion layer, wherein

the wavelength conversion layer includes a pore inside,

the second face has a recess, and

a part of the first layer is provided in the recess.

12. The wavelength conversion element according to claim 11 ,

the third layer is provided in direct contact with the second layer.

13. The wavelength conversion element according to claim 11 , further comprising:

a fourth layer which is provided facing the third layer and contains a second inorganic oxide that is different from the first inorganic oxide.

14. The wavelength conversion element according to claim 13 , wherein

the second inorganic oxide of the fourth layer is tin oxide.

15. A light source device, comprising:

the wavelength conversion element according to claim 11 ; and

a light source which emits the excitation light.

16. A projector, comprising:

the light source device according to claim 15 ;

a light modulator which modulates a light from the light source device in accordance with image information to form an image light; and

a projection optical system which projects the image light.

17. The wavelength conversion element according to claim 11 , wherein

the first layer includes a plurality of films, and

a first film of the plurality of films is in direct contact with the second face and contains silicon dioxide.

18. The wavelength conversion element according to claim 11 , wherein a film thickness of the second layer is greater than or equal to 1 nm and is less than or equal to 20 nm.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 13, 2018
From: TAKAGI, KUNIHIKO; YANO, KUNIHIKO; YOKOO, TOMOHIRO; YASUMATSU, WATARU; SHIMIZU, TETSUO; YOTSUYA, SHINICHI; SHIRATORI, KOYA
To: SEIKO EPSON CORPORATION
Reel/Frame 046865/0107 →
Priority Claims (2)
JP 2017-150599 · Aug 3, 2017 · national
JP 2017-247872 · Dec 25, 2017 · national
Continuity (1)
Related Publication 20190041733A1 · Feb 7, 2019