IP Library › Granted Patent US 10,861,675
Granted Patent B2
US 10,861,675 · App. 16/239,756 · Granted Dec 8, 2020

Plasma processing apparatus and plasma processing method

Inventors: Takao Funakubo (Miyagi, JP); Hirofumi Haga (Miyagi, JP); Shinichi Kozuka (Miyagi, JP); Wataru Ozawa (Miyagi, JP); Akihiro Sakamoto (Miyagi, JP); Naoki Taniguchi (Miyagi, JP); Hiroshi Tsujimoto (Miyagi, JP); Kumiko Ono (Miyagi, JP)
Assignee: TOKYO ELECTRON LIMITED
H01J37/32082H01J37/3299H01J37/32174H01J37/32449H01J37/32834
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Quick Facts
Patent No.
US 10,861,675
App. No.
16/239,756
Granted
Dec 8, 2020
Kind
B2
Abstract

A controller disclosed herein drives, in a first step, a high frequency generating source at a first energy condition, and drives, in a second step, a high frequency generating source at a second energy condition. Prior to a switching time of the first step and the second step, the controller switches gas species supplied from the gas supply system into the processing container, and sets a gas flow rate in an initial period just after the switching to be larger than a gas flow rate in a stabilization period after lapse of the initial period.

Claims (14)

1. A plasma processing apparatus comprising:

a processing container;

a gas supply source configured to supply a gas into the processing container;

a high frequency generating source configured to introduce high frequency waves for plasma generation into the processing container; and

an exhaust efficiency adjuster including a valve configured to adjust an exhaust efficiency of the gas within the processing container;

a controller configured to control an overall operation of the gas supply source, the high frequency generating source, and the exhaust efficiency adjuster;

wherein the controller is configured to:

first drive the high frequency generating source at a first energy condition,

second drive the high frequency generating source at a second energy condition, at a switching time defined by a time when the first drive changes to the second drive,

switch, at a beginning of a predetermined period (T 1 ) prior to the switching time, a gas species supplied from the gas supply source into the processing container,

set a gas flow rate for an initial period (T 2 ) just after the switch to be larger than a gas flow rate for a stabilization period after lapse of the initial period, and

control the exhaust efficiency adjuster to increase the exhaust efficiency of the gas within the processing container to be higher during the initial period than the exhaust efficiency of the gas during the stabilization period, from a time when the predetermined period (T 1 ) has elapsed after initiating the initial period to a time when the initial period ends.

2. The plasma processing apparatus of claim 1 , wherein the predetermined period T 1 is defined as 0.1 sec≤T 1 ≤1.5 sec.

3. The plasma processing apparatus of claim 1 , wherein a transitioning from the first drive to the second drive is performed without an intermediate time period.

Priority Claims (2)
JP 2014-134500 · Jun 30, 2014 · national
JP 2014-186820 · Sep 12, 2014 · national
Continuity (2)
Continuation 14751655 · Jun 26, 2015
Related Publication 20190139744A1 · May 9, 2019