Method of manufacturing an insulation layer on silicon carbide
A method of manufacturing an insulation layer on silicon carbide includes first preparing a surface of the silicon carbide, then forming a first part of the insulation layer on the surface at a temperature lower than 400° Celsius. Finally, a second part of the insulation layer is formed by depositing a dielectric film on the first part. The surface of the silicon carbide is illuminated by a light at a wavelength below and/or equal to 450 nm during and/or after the formation of the first part of the insulation layer.
1. A method of manufacturing an insulation layer on silicon carbide (SiC), comprising:
preparing a surface of the silicon carbide (SiC);
forming a first part of the insulation layer ( 700 , 901 , 951 ) on the prepared surface of the silicon carbide (SiC) at a temperature less than 400° Celsius, the first part of the insulation layer being silicon oxide;
forming a second part of the insulation layer by depositing a dielectric film on the first part of the insulation layer; and
illuminating the prepared surface of the silicon carbide (SiC) with light at a wavelength no greater than 450 nanometers during the formation of the first part ( 700 , 901 , 951 ) of the insulation layer using a light source (LS),
wherein the light source (LS) comprises one or more of a lamp (La), a laser (LX), a light emitting diode, and a plasma,
wherein the silicon oxide of the first part ( 700 , 901 , 951 ) of the insulation layer is formed by exposing the prepared surface of the silicon carbide (SiC) to ozone (O3), and the ozone is generated at least partly from oxygen (O2) by the light which illuminates the prepared surface of the silicon carbide (SiC), and
wherein nitrogen oxides are provided together with the oxygen (O2).
2. The method of claim 1 , wherein the wavelength of the light is no greater than 380 nm.
3. The method of claim 1 , wherein the light source (LS) emits the light with a density of photons on the prepared surface of the silicon carbide (SiC) that is greater than a density of carbon atoms on the prepared surface of the silicon carbide (SiC).
4. A method of manufacturing an insulation layer on silicon carbide (SiC), comprising:
preparing a surface of the silicon carbide (SiC);
forming a first part of the insulation layer ( 700 , 901 , 951 ) on the prepared surface of the silicon carbide (SiC) at a temperature less than 400° Celsius, the first part of the insulation layer being silicon oxide;
forming a second part of the insulation layer by depositing a dielectric film on the first part of the insulation layer; and
illuminating the prepared surface of the silicon carbide (SiC) with light at a wavelength no greater than 450 nanometers after the formation of the first part ( 700 , 901 , 951 ) of the insulation layer using a light source (LS),
wherein the light illuminates the prepared surface of the silicon carbide (SiC) between the formation of the first ( 700 , 901 , 951 ) part of the insulation layer and the second part of the insulation layer using an atmosphere containing at least hydrogen.
5. The method of claim 4 , wherein that the hydrogen comprises one or more of hydrogen molecules, hydrogen ions, and hydrogen radicals.
6. The method of claim 5 , wherein the hydrogen ions, the hydrogen radicals, or both the hydrogen ions and the hydrogen radical are provided using one or both of a plasma and a catalytic decomposition.
7. The method of claim 6 , wherein the light generated by the plasma is the light source (LS) that illuminates the first part ( 700 , 901 , 951 ) of the insulation layer.