Semiconductor device and manufacturing method thereof
View Patent ↗A semiconductor device includes a substrate, at least one layer, a metal adhesive, and a metal structure. The layer is disposed on the substrate. The layer has an opening, and the opening has a bottom surface and at least one sidewall. The metal adhesive is disposed on the bottom surface of the opening while leaving at least a portion of the sidewall of the opening exposed. The metal structure is disposed in the opening and on the metal adhesive.
1. A semiconductor device, comprising:
a substrate; and
an N-channel transistor comprising:
a spacer structure;
a high-K dielectric layer having a first portion extending along a top surface of the substrate and a second portion extending along an inner sidewall of the spacer structure;
a first blocking layer over the high-K dielectric layer;
a second blocking layer disposed between the high-K dielectric layer and the first blocking layer;
a cap layer disposed on and in direct contact with the high-K dielectric layer, wherein the second blocking layer is disposed on the cap layer;
a work function metal layer disposed between the first blocking layer and the second blocking layer, wherein the second blocking layer is on a sidewall of the work function metal layer;
a metal adhesive disposed on the first blocking layer, wherein the metal adhesive comprises boron; and
a metal structure having a bottom in contact with the metal adhesive and a sidewall in direct contact with the first blocking layer.
2. The semiconductor device of claim 1 , wherein the metal adhesive is made of boron (B), tungsten boron (WB x ), tungsten boron silicon (WSi x B), or combinations thereof.
3. The semiconductor device of claim 1 , further comprising:
an interfacial layer disposed between the metal adhesive and the substrate, wherein the high-K dielectric layer is disposed on the interfacial layer.
4. The semiconductor device of claim 1 , wherein a thickness of the metal adhesive is in a range from about 1 Angstrom to about 20 Angstrom.
5. A semiconductor device, comprising:
a substrate; and
an N-channel transistor comprising:
a metal gate stack on the substrate, wherein the metal gate stack comprises:
an interfacial layer on the substrate;
a high-K dielectric layer on the interfacial layer, wherein the interfacial layer is between the substrate and the high-K dielectric layer;
a cap layer over the high-K dielectric layer, the cap layer comprising silicon;
a metal adhesive comprising boron;
a metal structure in contact with the metal adhesive;
a first blocking layer over the high-K dielectric layer and the cap layer and in contact with the metal adhesive and a sidewall of the metal structure;
a second blocking layer between the high-K dielectric layer and the first blocking layer; and
a work function metal layer wrapping around the first blocking layer.
6. The semiconductor device of claim 5 , wherein the metal adhesive is made of alloy.
7. The semiconductor device of claim 5 , wherein the metal adhesive is made of boron (B), tungsten boron (WB x ), tungsten boron silicon (WSi x B), or combinations thereof.
8. The semiconductor device of claim 5 , wherein the work function metal layer is between the first blocking layer and the second blocking layer.
9. The semiconductor device of claim 5 , wherein the second blocking layer is on the cap layer.
10. The semiconductor device of claim 5 , further comprising a spacer structure on a sidewall of the high-K dielectric layer.
11. The semiconductor device of claim 5 , wherein the cap layer is in direct contact with the high-K dielectric layer.
12. The semiconductor device of claim 5 , wherein the second blocking layer is on a sidewall of the work function metal layer.
13. The semiconductor device of claim 5 , wherein the metal adhesive is between the first blocking layer and the metal structure.
14. The semiconductor device of claim 5 , wherein the cap layer is spaced apart from the metal adhesive.
15. The semiconductor device of claim 5 , wherein the cap layer is spaced apart from the first blocking layer.
16. A semiconductor device, comprising:
a substrate;
an N-channel transistor comprising:
a metal structure;
a metal adhesive between the metal structure and the substrate, wherein the metal adhesive is in contact with a bottom of the metal structure;
a first blocking layer having a first portion in contact with a bottom of the metal adhesive and at least one second portion in direct contact with a sidewall of the metal adhesive and a sidewall of the metal structure;
a work function metal layer wrapping around the first blocking layer;
a second blocking layer wrapping around the work function metal layer;
a cap layer wrapping around the second blocking layer; and
a high-K dielectric layer wrapping around the cap layer.
17. The semiconductor device of claim 16 , wherein the metal adhesive is between the first portion of the first blocking layer and the metal structure.
18. The semiconductor device of claim 16 , wherein the metal adhesive and the first blocking layer comprise different metals.
19. The semiconductor device of claim 16 , wherein a thickness of the metal adhesive is in a range from about 1 Angstrom to about 20 Angstrom.
20. The semiconductor device of claim 16 , wherein the high-K dielectric layer is spaced apart from the substrate.