Semiconductor arrangement and method for manufacturing the same
Provided are a semiconductor arrangement and a method for manufacturing the same. An example arrangement may comprise: a bulk semiconductor substrate; a fin formed on the substrate; a first FinFET and a second FinFET formed on the substrate, wherein the first FinFET comprises a first gate stack intersecting the fin and a first gate spacer disposed on sidewalls of the first gate stack, the second FinFET comprises a second gate stack intersecting the fin and a second gate spacer disposed on sidewalls of the second gate stack; a dummy gate spacer formed between the first FinFET and the second FinFET and intersecting the fin; a first isolation section self-aligned to a space defined by the dummy gate spacer, wherein the isolation section electrically isolates the first FinFET from the second FinFET; and a second isolation layer disposed under a bottom surface of the first isolation section.
1. A semiconductor arrangement, comprising:
a bulk semiconductor substrate;
a fin formed on the substrate;
a first FinFET and a second FinFET formed on the substrate, wherein the first FinFET comprises a first gate stack intersecting the fin and a first gate spacer disposed on sidewalls of the first gate stack, the second FinFET comprises a second gate stack intersecting the fin and a second gate spacer disposed on sidewalls of the second gate stack;
a dummy gate spacer formed between the first FinFET and the second FinFET and intersecting the fin, the dummy gate spacer having opposite inner sidewalls co-planar with respective sidewalls of the fin, or the dummy gate spacer having opposite inner sidewalls, each of the opposite inner sidewalls being laterally and substantially equally offset from a sidewall of the fin;
a first isolation section self-aligned to a space defined by the dummy gate spacer, wherein the first isolation section electrically isolates the first FinFET from the second FinFET; and
a second isolation section disposed under a bottom surface of the first isolation section, wherein the second isolation section has a height in a vertical direction greater than a distance between a sidewall of the first isolation section and a sidewall of the fin facing the sidewall of the first isolation section in a lateral direction, and a top-most portion of the second isolation section lies at a level lower than a top-most portion of the first isolation section.
2. The semiconductor arrangement of claim 1 , wherein the substrate comprises a doped well, and the second isolation section is disposed at least partially in the doped well and defined between the first FinFET and the second FinFET.
3. The semiconductor arrangement of claim 1 , wherein the substrate comprises a doped well, and the second isolation section has a dopant concentration higher than that in the doped well and is defined between the first FinFET and the second FinFET.
4. The semiconductor arrangement of claim 1 , wherein the first FinFET is an n-type MOSFET and the second FinFET is a p-type MOSFET, the substrate comprises an n-type doped well under the second FinFET and a p-type doped well under the the first FinFET, and the second isolation section is defined between the first FinFET and the second FinFET and comprises at least a portion having an n-type dopant concentration higher than that in the n-type doped well and/or at least a portion having a p-type dopant concentration higher than that in the p-type doped well.
5. The semiconductor arrangement of claim 1 , wherein the second isolation section comprises at least one of an insulation layer, a pn junction isolation, or a doped semiconductor isolation.
6. The semiconductor arrangement of claim 1 , wherein the first isolation section comprises a dielectric material layer whose sidewalls extend substantially along inner walls of the dummy gate spacer.
7. The semiconductor arrangement of claim 1 , wherein the second isolation section is substantially aligned to the first isolation section.
8. The semiconductor arrangement of claim 1 , wherein the first gate stack and the second gate stack are recessed with respect to the first gate spacer and the second gate spacer, respectively, and the semiconductor arrangement further comprises dielectric layers disposed on top of the first gate stack and the second gate stack inside the first gate spacer and the second gate spacer, respectively.
9. The semiconductor arrangement of claim 1 , further comprising a further semiconductor layer which is at least partially embedded into the fin on respective opposite sides of the first gate stack and/or the second gate stack, wherein the first FinFET and/or the second FinFET comprise respective source/drain regions at least partially formed in the further semiconductor layer.
10. The semiconductor arrangement of claim 1 , wherein a sidewall of the second isolation section facing the first FinFET is closer to the first FinFET than a sidewall of the first isolation section facing the first FinFET, and a sidewall of the second isolation section facing the second FinFET is closer to the second FinFET than a sidewall of the first isolation section facing the second FinFET.
11. The semiconductor arrangement of claim 1 , wherein the second isolation layer has a width greater than or smaller than a gate length of the gate stack.
12. An electronic device comprising an Integrated Circuit (IC) comprising the semiconductor device according to claim 1 .
13. The electronic device of claim 12 , further comprising a display operatively coupled to the IC and a wireless transceiver operatively coupled to the IC.
14. The electronic device of claim 12 , wherein the electronic device comprises a smart phone, a computer, a tablet computer, an artificial intelligence, a wearable smart device, or a mobile power supply.