Thermal routing trench by additive processing
An integrated circuit has a substrate which includes a semiconductor material, and an interconnect region disposed on the substrate. The integrated circuit includes a thermal routing trench in the substrate. The thermal routing trench includes a cohered nanoparticle film in which adjacent nanoparticles are cohered to each other. The thermal routing trench has a thermal conductivity higher than the semiconductor material contacting the thermal routing trench. The cohered nanoparticle film is formed by an additive process.
1. An integrated circuit, comprising:
a substrate including semiconductor material;
an interconnect region above the substrate;
a heat generating component in the substrate; and
a thermal routing trench in the substrate, the substrate extending under the thermal routing trench, the interconnect region extending over the thermal routing trench, the thermal routing trench located proximate the heat generating component, and the thermal routing trench including a nanoparticle film including nanoparticles, in which adjacent nanoparticles are cohered to each other, and the thermal routing trench has a thermal conductivity higher than the semiconductor material contacting the thermal routing trench, and the thermal routing trench extends to a heat removal region of the integrated circuit.
2. The integrated circuit of claim 1 , wherein the thermal routing trench includes a liner of dielectric material contacting the semiconductor material adjacent the thermal routing trench, and the nanoparticle film is separated from the semiconductor material by the liner.
3. The integrated circuit of claim 1 , wherein the nanoparticles include a material selected from a group consisting of aluminum oxide, diamond, hexagonal boron nitride, cubic boron nitride, aluminum nitride, metal, graphene, graphene embedded in metal, graphite, graphitic carbon, and carbon nanotubes.
4. The integrated circuit of claim 1 , wherein the nanoparticles include a metal selected from a group consisting of copper, nickel, palladium, platinum, iridium, rhodium, cerium, osmium, molybdenum, and gold, and the thermal routing trench includes a layer of graphitic material on the nanoparticle film.
5. The integrated circuit of claim 1 , wherein the thermal routing trench extends away from a thermally sensitive component of the integrated circuit.
6. The integrated circuit of claim 1 , wherein the thermal routing trench extends proximate to matching components of the integrated circuit.
7. The integrated circuit of claim 1 , wherein the thermal routing trench extends to a boundary between the substrate and the interconnect region.
8. The integrated circuit of claim 1 , wherein the thermal routing trench extends into the interconnect region.
9. The integrated circuit of claim 1 , wherein the nanoparticle film is a first nanoparticle film, and the integrated circuit further comprises a thermal routing component selected from a group consisting of a high thermal conductivity via, an interconnect region thermal routing structure, a top level thermal conductivity structure above the interconnect region, a high thermal conductivity through package conduit, and a graphitic via, in which:
the high thermal conductivity via includes a second nanoparticle film, and the high thermal conductivity via is above the interconnect region;
the interconnect region thermal routing structure includes a third nanoparticle film, and the interconnect region thermal routing structure is in the interconnect region;
the top level thermal conductivity structure above the interconnect region includes a fourth nanoparticle film;
the high thermal conductivity through package conduit includes a fifth nanoparticle film, and the high thermal conductivity through package conduit is through an encapsulation material over the integrated circuit and extends to the integrated circuit; and
the graphitic via includes a sixth nanoparticle film, and the graphitic via is electrically coupled to one of multiple components.