Semiconductor devices including protruding insulation portions between active fins

1. A semiconductor device comprising:

a first channel active pattern protruding from a substrate and extending in a first direction;

a second channel active pattern protruding from the substrate and extending in the first direction, wherein the first and second channel active pattern are separated from one another in the first direction;

a field insulation layer disposed on the substrate;

a source/drain region between the first channel active pattern and the field insulation layer;

a first gate pattern disposed on the first channel active pattern and including a first gate and a first gate spacer; and

a second gate pattern disposed on the field insulation layer and including a second gate and a second gate spacer,

wherein the second gate and the field insulation layer are disposed to be misaligned with each other, and

wherein the second gate pattern vertically overlaps a portion of the first channel active pattern and a portion of the second channel active pattern.

2. The semiconductor device of claim 1 , wherein the substrate comprises one or more semiconductor materials, or a silicon on insulator substrate.

3. The semiconductor device of claim 1 , wherein the first channel active pattern is fin-shaped and includes an epitaxial layer grown from the substrate.

4. The semiconductor device of claim 1 , wherein the field insulation layer comprises an oxide layer, a nitride layer, an oxynitride layer, or a combination thereof.

5. The semiconductor device of claim 1 , wherein the source/drain region comprises an epitaxial layer.

6. The semiconductor device of claim 1 , wherein each of the first gate and the second gate comprises a first metal layer and a second metal layer, the second metal layer filling a space formed by the first metal layer.

7. The semiconductor device of claim 6 , wherein the first metal layer comprises at least one of TiN, TaN, TiC or TaC, and the second metal layer comprises W or Al.

8. The semiconductor device of claim 1 , further comprising:

a gate insulation layer disposed between the second gate and a top surface of the field insulation layer,

wherein the gate insulation layer comprises HfO 2 , ZrO 2 , or Ta 2 O 5 .

9. A semiconductor device comprising:

a channel active pattern protruding from a substrate and extending along a first direction;

a field insulation layer disposed on the substrate, wherein the field insulation layer comprises a major surface and a protruding portion extending from the major surface;

a source/drain region between the channel active pattern and the field insulation layer;

a first gate disposed on the channel active pattern and extending along a second direction intersecting the first direction; and

a second gate disposed on the protruding portion of the field insulation layer and extending along the second direction,

wherein the second gate and the field insulation layer are disposed to be misaligned with each other in a third direction perpendicular to the first and second directions.

10. The semiconductor device of claim 9 , wherein the substrate comprises one or more semiconductor materials, or a silicon on insulator substrate.

11. The semiconductor device of claim 9 , wherein the channel active pattern is fin-shaped and includes an epitaxial layer grown from the substrate.

12. The semiconductor device of claim 9 , wherein the field insulation layer comprises an oxide layer, a nitride layer, an oxynitride layer, or a combination thereof.

13. The semiconductor device of claim 9 , wherein the source/drain region comprises an epitaxial layer.

14. The semiconductor device of claim 9 , wherein each of the first gate and the second gate comprises a first metal layer and a second metal layer, the second metal layer filling a space formed by the first metal layer.

15. The semiconductor device of claim 14 , wherein the first metal layer comprises at least one of TiN, TaN, TiC or TaC, and the second metal layer comprises W or Al.

16. The semiconductor device of claim 9 , wherein a gate insulation layer is disposed between the second gate and a top surface of the field insulation layer.

17. The semiconductor device of claim 16 , wherein the gate insulation layer comprises HfO 2 , ZrO 2 , or Ta 2 O 5 .

18. A semiconductor device comprising:

a channel active pattern protruding from a substrate;

a field insulation layer disposed on the substrate;

a source/drain region between the channel active pattern and the field insulation layer;

a first gate pattern disposed on the channel active pattern and including a first gate and a first gate spacer; and

a second gate pattern disposed on the field insulation layer and including a second gate and a second gate spacer,

wherein a first portion of the second gate pattern overlaps with a portion of the channel active pattern,

wherein a second portion of the second gate pattern overlaps with the field insulation layer,

wherein a third portion of the second gate pattern does not overlap with the channel active pattern and the field insulation layer,

wherein the second portion of the second gate pattern is between the first portion of the second gate pattern and the third portion of the second gate pattern, and

wherein a top surface of the field insulation layer is located at the same vertical level or higher than a top surface of the channel active pattern.

19. The semiconductor device of claim 18 , wherein a gate insulation layer is disposed between the second gate and a top surface of the field insulation layer.

20. The semiconductor device of claim 18 , wherein each of the first gate and the second gate comprises a first metal layer and a second metal layer, the second metal layer filling a space formed by the first metal layer.