Semiconductor element and crystalline laminate structure
A semiconductor element includes a high-resistivity substrate that includes a β-Ga 2 O 3 -based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a β-Ga 2 O 3 -based single crystal, and a channel layer on the buffer layer, the channel layer including a β-Ga 2 O 3 -based single crystal including a donor impurity. A crystalline laminate structure includes a high-resistivity substrate that includes a β-Ga 2 O 3 -based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a β-Ga 2 O 3 -based single crystal, and a donor impurity-containing layer on the buffer layer, the donor impurity-containing layer including a β-Ga 2 O 3 -based single crystal including a donor impurity.
1. A semiconductor element, comprising:
a high-resistivity substrate that comprises a beta-gallium oxide (β-Ga 2 O 3 )-based single crystal comprising iron (Fe) as an acceptor impurity at a first Fe concentration and includes a principal surface having a plane orientation of (001) or (010);
a buffer layer disposed on the principal surface of the high-resistivity substrate, the buffer layer comprising a β-Ga 2 O 3 -based single crystal;
a channel layer disposed on the buffer layer, the channel layer comprising a β-Ga 2 O 3 -based single crystal comprising a donor impurity; and
a gate electrode disposed on a surface of the channel layer,
wherein the buffer layer is in a direct contact with the channel layer,
wherein the channel layer includes a same impurity material from the surface of the channel layer on which the gate electrode is disposed to an interface between the channel layer and the buffer layer,
wherein the buffer layer has a thickness of not less than 0.18 μm when the principal surface of the high-resistivity substrate has the plane orientation of (001), or has a thickness of not less than 1 μm when the principal surface of the high-resistivity substrate has the plane orientation of (010),
wherein the buffer layer suppresses diffusion of the Fe as the acceptor impurity from the high-resistivity substrate into the channel layer,
wherein the buffer layer comprises Fe at a second Fe concentration which is lower than the first Fe concentration, and
wherein the channel layer comprises Fe at a third Fe concentration which is lower than the second Fe concentration.
2. The semiconductor element according to claim 1 , comprising a MESFET or a MISFET.
3. The semiconductor element according to claim 1 , wherein the principal surface of the high-resistivity substrate has the plane orientation of (001), and
wherein the second Fe concentration is less than 1×10 16 cm −3 and not less than a lower limit of measurement in a region at a distance of 0.18 μm from an interface between the buffer layer and the substrate in a thickness direction.
4. The semiconductor element according to claim 1 , wherein the principal surface of the high-resistivity substrate has the plane orientation of (010), and
wherein the second Fe concentration is less than 1×10 16 cm −3 and not less than a lower limit of measurement in a region at a distance of 1 μm from an interface between the buffer layer and the substrate in a thickness direction.
5. A crystalline laminate structure, comprising:
a high-resistivity substrate that comprises a beta-gallium oxide (β-Ga 2 O 3 )-based single crystal comprising iron (Fe) as an acceptor impurity at a first Fe concentration and includes a principal surface having a plane orientation of (001) or (010);
a buffer layer disposed on the principal surface the high-resistivity substrate, the buffer layer comprising a β-Ga 2 O 3 -based single crystal;
a donor impurity-containing layer disposed on the buffer layer, the donor impurity-containing layer comprising a β-Ga 2 O 3 -based single crystal comprising a donor impurity; and
a gate electrode disposed on a surface of the donor impurity-containing layer,
wherein the buffer layer is in a direct contact with the donor impurity-containing layer,
wherein the donor impurity-containing layer includes a same impurity material from the surface of the donor impurity-containing layer on which the gate electrode is disposed to an interface between the donor impurity-containing layer and the buffer layer,
wherein the buffer layer has a thickness of not less than 0.18 μm when the principal surface of the high-resistivity substrate has the plane orientation of (001), or has a thickness of not less than 1 μm when the principal surface of the high-resistivity substrate has the plane orientation of (010),
wherein the buffer layer suppresses diffusion of the Fe as the acceptor impurity from the high-resistivity substrate into the channel layer,
wherein the buffer layer comprises a lower portion and an upper portion,
wherein the lower portion of the buffer layer comprises Fe at a second Fe concentration which is lower than the first Fe concentration, and
wherein the upper portion of the buffer layer and the channel layer do not comprise Fe.
6. The crystalline laminate structure according to claim 5 , wherein the principal surface of the high-resistivity substrate has the plane orientation of (001), and
wherein the second Fe concentration of the lower portion of the buffer layer is less than 1×10 16 cm −' and not less than a lower limit of measurement in a region at a distance of 0.18 82 m from an interface between the buffer layer and the substrate in a thickness direction.
7. The crystalline laminate structure according to claim 5 , wherein the principal surface of the high-resistivity substrate has the plane orientation of (010), and
wherein the second Fe concentration of the lower portion of the buffer layer is less than 1×10 16 cm −3 and not less than a lower limit of measurement in a region at a distance of 1 μm from an interface between the buffer layer and the substrate in a thickness direction.