Method for manufacturing selective emitter using surface structure and solar cell including selective emitter using surface structure
Proposed is a method for manufacturing a selective emitter using a surface structure, the method includes: preparing a wafer; forming fine first surface unevenness in each of front and rear faces of the wafer; forming a texturing-inhibiting film on each of the front and rear faces of the wafer; partially patterning the front texturing-inhibiting film to expose a portion of the front face of the wafer; forming second surface unevenness in the exposed portion of the wafer, wherein the second surface unevenness has a roughness greater and deeper than a roughness of the first surface unevenness; removing the texturing-inhibiting films; and forming a selective emitter on a surface of the wafer having the first surface unevenness and the second surface unevenness defined therein using a doping process.
1. A method for manufacturing a selective emitter using a surface structure, the method includes:
preparing a wafer;
forming fine first surface unevenness in each of front and rear faces of the wafer;
forming a texturing-inhibiting film on each of the front and rear faces of the wafer;
patterning the texturing-inhibiting film to remove a portion of the texturing-inhibiting film and to expose a portion of the front face of the wafer;
forming second surface unevenness in the exposed portion of the wafer, wherein the second surface unevenness has a roughness greater and deeper than a roughness of the first surface unevenness;
removing the texturing-inhibiting film that remains on each of the front and rear faces of the wafer; and
forming a selective emitter on a surface of the wafer having the first surface unevenness and the second surface unevenness defined therein using a doping process,
wherein the forming of the first surface unevenness and the second surface unevenness reduces a loss of over alignment for alignment of a front electrode.
2. The method of claim 1 , wherein forming the selective emitter includes implanting impurity ions having a conductive type different from a conductive type of the wafer.
3. The method of claim 1 , wherein forming the first surface unevenness includes using at least one of plasma treatment, laser scribing, scratching, or acid or base treatment.
4. The method of claim 1 , wherein forming the second surface unevenness includes using at least one of plasma treatment, laser scribing, scratching, or acid or base treatment.
5. A solar cell having a selective emitter, wherein the selective emitter is formed according to the method of claim 1 .
6. A method for manufacturing a solar cell including a selective emitter using a surface structure, the method including:
forming fine first surface unevenness on each of front and rear faces of the wafer;
forming a texturing-inhibiting film on each of the front and rear faces of the wafer;
patterning the texturing-inhibiting film to remove a portion of the texturing-inhibiting film and to expose a portion of the front face of the wafer;
forming second surface unevenness in the exposed portion of the wafer, wherein the second surface unevenness has a roughness greater and deeper than a roughness of the first surface unevenness;
removing the texturing-inhibiting film that remains on each of the front and rear faces of the wafer;
forming a selective emitter on a surface of the wafer having the first surface unevenness and the second surface unevenness defined therein using a doping process;
forming an anti-reflection film on the front face;
forming a passivation film on each of the front and rear faces; and
forming a front electrode and a rear electrode,
wherein the forming of the first surface unevenness and the second surface unevenness reduces a loss of over alignment for alignment of the front electrode.
7. The method of claim 6 , wherein forming the selective emitter includes implanting impurity ions having a conductive type different from a conductive type of the wafer.
8. The method of claim 6 , wherein forming the first surface unevenness includes using at least one of chemical etching treatment, plasma treatment, laser scribing, scratching, or acid or base treatment.
9. The method of claim 6 , wherein forming the second surface unevenness includes using at least one of chemical etching treatment, plasma treatment, laser scribing, scratching, or acid or base treatment.
10. The method of claim 6 , wherein the method further includes forming a rear electric field layer on the rear face.
11. The method of claim 6 , wherein the front electrode contacts the first surface unevenness.