Composition for post chemical-mechanical-polishing cleaning
Described is a post chemical-mechanical-polishing (post-CMP) cleaning composition comprising or consisting of: (A) one or more water-soluble nonionic copolymers of the general formula (I) and mixtures thereof, formula (I) wherein R 1 and R 3 are independently from each other hydrogen, methyl, ethyl, n-propyl, iso-propyl, n-butyl, iso-Butyl, or sec-butyl, R 2 is methyl and x and y are an integer, 1 (B)poly(acrylic acid) (PAA) or acrylic acid-maleic acid copolymer with a mass average molar mass (Mw) of up to 10,000 g/mol, and (C) water, wherein the pH of the composition is in the range of from 7.0 to 10.5.
1. A post chemical-mechanical-polishing cleaning composition, comprising:
(A) a water-soluble nonionic copolymer which is a block copolymer of formula (I), an alternating copolymer of formula (II), or a random copolymer with units represented in formulas:
wherein R 1 and R 3 are independently hydrogen, methyl, ethyl, n-propyl, iso-propyl, n-butyl, iso-butyl, or sec-butyl, and x and y are each independently an integer, a ratio of x to y being in a range of from 0.11 to 9,
(B) poly(acrylic acid) or acrylic acid-maleic acid copolymer with a mass average molar mass of up to 10,000 g/mol, and
(C) water,
wherein a pH of the composition is in a range of from 7.0 to 10.5.
2. The composition of claim 1 , wherein the pH is in a range of from 8.0 to 9.0.
3. The composition of claim 1 , wherein the copolymer comprises a block copolymer having a mass average molar mass in a range of from 500 to 15,000 g/mol,
wherein
R 1 and R 3 are independently hydrogen or methyl,
R 2 is methyl, and
wherein the ratio of x to y is in a range of from 0.25 to 4.
4. The composition of claim 1 , wherein the poly(acrylic acid) or acrylic acid-maleic acid copolymer (B) is acrylic acid-maleic acid copolymer with a mass average molar mass of up to 10,000 g/mol.
5. The post chemical mechanical polishing cleaning composition of claim 1 , further comprising
(D) a corrosion inhibitor.
6. The composition of claim 5 , wherein the corrosion inhibitor (D) is at least one selected from the group consisting of acetylcysteine, an N-acyl-sarcosine, an alkylsulfonic acid, an alkyl-aryl sulfonic acid, isophthalic acid, an alkyl phosphate, polyaspartic acid, imidazole, an imidazole derivative, polyethylenimine with a mass average molar mass in a range of from 200 to 2,000 g/mol, a triazole derivative, and an ethylene diamine derivative.
7. The composition of claim 1 , further comprising
(E) a base.
8. The composition of claim 1 , wherein all constituents are in the liquid phase.
9. The composition of claim 1 , which is suitable for
a) removing residues and contaminants from a substrate, and/or
b) cleaning of semiconductor devices.
10. The composition of claim 1 , which is a ready-to-use post chemical-mechanical-polishing cleaning composition, comprising:
(A) a total amount of the water-soluble nonionic copolymer in a range of from 0.001 to 0.15 wt.-%, based on the total weight of the composition; and
(B) a total amount of the poly(acrylic acid) (PAA) or acrylic acid-maleic acid copolymer in a range of from 0.001 to 0.15 wt.-%, based on the total weight of the composition.
11. The composition of claim 1 , which is a post chemical-mechanical-polishing (post-CMP) cleaning composition concentrate, comprising:
(A) a total amount of the water-soluble nonionic copolymer in a range of from 0.1 to 7.5 wt.-%, based on the total weight of the composition; and
(B) a total amount of the poly(acrylic acid) (PAA) or acrylic acid-maleic acid copolymer in a range of from 0.1 to 7.5 wt.-%, based on the total weight of the composition.
12. A cobalt post chemical-mechanical-polishing cleaner, comprising:
the composition of claim 1 .
13. A process for the manufacture of a semiconductor device from a semiconductor substrate, the process comprising:
removing residues and contaminants from a surface of the semiconductor substrate by contacting it at least once with the composition of claim 1 .
14. The process of claim 13 , further comprising:
chemical-mechanical-polishing the semiconductor substrate.
15. A method, comprising:
cleaning a substrate comprising cobalt with the composition of claim 1 .
16. A method, comprising:
removing residues and contaminants from a surface of a semiconductor substrate comprising cobalt or a cobalt alloy with the composition of claim 1 .
17. The composition of claim 1 , comprising no quaternary ammonium cation.
18. The composition of claim 1 , having a sodium cation concentration of less than 500 ppm.
19. The composition of claim 1 , wherein the nonionic water soluble copolymer (A) has a mass average molar mass (Mw) in a range of from 2000 to 10000 g/mol.
20. The composition of claim 1 , comprising the acrylic acid-maleic acid copolymer,
wherein the nonionic water soluble copolymer (A) is a block copolymer with a central propyleneoxide block flanked by two polyethyleneglycol blocks.