Method of etching hardmasks containing high hardness materials
A method of etching a hardmask layer formed on a substrate is provided. The method includes supplying an etching gas mixture to a processing region of a processing chamber. A device is disposed in the processing region when the etching gas mixture is supplied to the processing region. The device comprises a substrate and a hardmask layer formed over the substrate. The etching gas mixture comprises a fluorine-containing gas, a silicon-containing gas, and an oxygen-containing gas. The method further includes providing RF power to the etching gas mixture to form a plasma in the processing region. The plasma is configured to etch exposed portions of the hardmask layer.
1. A method of etching, comprising:
supplying an etching gas mixture to a processing region of a processing chamber, wherein
a device is disposed in the processing region when the etching gas mixture is supplied to the processing region,
the device comprises a substrate, a hardmask layer formed over the substrate and a dielectric layer formed over the hardmask layer, and
the hardmask layer comprises tungsten and carbon, and
the etching gas mixture comprises chlorine (Cl 2 ), nitrogen tri-fluoride (NF 3 ), a silicon-containing gas and an oxygen-containing gas; and
providing RF power to the etching gas mixture to form a plasma in the processing region, wherein the plasma is configured to etch exposed portions of the hardmask layer through a void formed in the dielectric layer, wherein the silicon-containing gas comprises silicon tetrachloride (SiCl 4 ), silicon tetrafluoride (SiF 4 ), silane (SiH 4 ), or disilane (Si 2 H 6 ).
2. The method of claim 1 , wherein the hardmask layer comprises tungsten carbide (WC) or tungsten boron carbide (WBC).
3. The method of claim 1 , wherein the plasma is configured to etch exposed portions of the hardmask layer to form exposed portions of a metal layer disposed between the hardmask layer and the substrate.
4. The method of claim 1 , wherein the oxygen-containing gas comprises oxygen (O 2 ).
5. The method of claim 1 , wherein a flowrate ratio of the silicon-containing gas to the oxygen-containing gas included in the etching gas mixture supplied to the processing region is between about 1:1 and about 1:5.