Methods of forming integrated circuitry
Some embodiments include methods in which a structure has a first semiconductor material over a dielectric region, a second semiconductor material under the dielectric region, an insulative wall laterally surrounding a volume of the first semiconductor material, and a first doped region along a lower surface of the first semiconductor material. The first semiconductor material is patterned to form a pillar within a tub. The pillar has top and bottom portions. An upper doped region is formed within the pillar top portion. A dielectric liner is formed to extend along the pillar, and to extend along the bottom of the tub. Conductive gate material is formed within the tub and over the dielectric liner. The lower and upper doped regions within the pillar are first and second source/drain regions, respectively, and the conductive gate material includes a transistor gate which gatedly couples the first and second source/drain regions.
1. A device comprising:
a semiconductor material including first and second main surfaces opposing to each other;
a semiconductor pillar protruding from a first part of the first main surface of the semiconductor material, the semiconductor pillar including an upper surface and a side surface extending downwardly from the upper surface;
gate conductive material over a second part of the first main surface of the semiconductor material around the first part of the first main surface to surround the side surface of the semiconductor pillar;
gate dielectric material between the gate conductive material and each of the side surface of the semiconductor pillar and the second part of the first main surface of the semiconductor material; and
electrode material in electrical contact with at least a part of the upper surface of the semiconductor pillar.
2. The device of claim 1 wherein:
an upper source/drain region is within an upper part of the semiconductor pillar and includes the upper surface of the semiconductor pillar;
a lower source/drain region is within a lower part of the semiconductor material and includes the second main surface of the semiconductor material;
a channel region is vertically between the upper and lower source/drain regions; and
the gate conductive material is along the channel region.
3. The device of claim 2 wherein the channel region is within an upper part of the semiconductor material and includes the first main surface of the semiconductor material.
4. The device of claim 1 further comprising a first electrode material in electrical contact with the upper surface of the semiconductive pillar, and a second electrode material in electrical contact with an upper surface of the gate conductive material.
5. The device of claim 4 further comprising a third electrode material coupled with a conductive rail.
6. The device of claim 5 wherein the first semiconductor material is over an insulative layer, wherein the third electrode extends through the insulative layer; and wherein the conductive rail is under the insulative layer.
7. A device comprising:
a first semiconductor material over a first region of the upper surface of an insulative layer, and a second semiconductor material over a second region of the upper surface of the insulative layer; the second region being laterally offset from the first region;
an insulative block laterally between the first and second semiconductor materials;
a first semiconductor material having a first main surface, and the second semiconductor material having a second main surface laterally offset from the first main surface;
a first semiconductor pillar protruding upwardly from the first main surface;
a second semiconductor pillar protruding upwardly from the second main surface;
a first capacitor storage node coupled with an upper surface of the first semiconductor pillar;
a second capacitor storage node coupled with an upper surface of the second semiconductor pillar; and
a gate conductive material over portions of the first and second main surfaces, over the insulative block, and along side surfaces of the first and second semiconductor pillars.
8. The device of claim 7 wherein:
upper source/drain regions are within upper parts of the first and second semiconductor pillars and include the upper surfaces of the first and second semiconductor pillars;
lower source/drain regions are within lower parts of the first and second semiconductor materials and include the first and second main surfaces;
channel regions are vertically between the upper and lower source/drain regions; and
the gate conductive material is along the channel regions.
9. The device of claim 8 wherein the upper and lower source/drain regions are n-type regions.
10. The device of claim 9 further comprising a wordline above the upper surfaces of the first and second semiconductor pillars.