Image sensors for distance measurement

1. An image sensor, comprising:

a semiconductor substrate including a first surface and a second surface, the semiconductor substrate further including a well region and a first floating diffusion region, each of the well region and the first floating diffusion region adjacent to the first surface;

a first vertical transmission gate and a second vertical transmission gate isolated from direct contact with each other, the first vertical transmission gate and the second vertical transmission gate each extending from the first surface of the semiconductor substrate and in a thickness direction of the semiconductor substrate through at least a portion of the well region, the thickness direction being perpendicular to at least one of the first surface and the second surface;

a first storage gate between the first vertical transmission gate and the first floating diffusion region, the first storage gate on the first surface of the semiconductor substrate; and

a first tap transmission gate between the first storage gate and the first floating diffusion region, the first tap transmission gate on the first surface of the semiconductor substrate.

2. The image sensor of claim 1 , wherein

the first tap transmission gate is a transistor gate of a first tap transmission transistor, and

the first tap transmission transistor is configured to transfer a photocharge that is stored in a first charge storage region on the first storage gate to the first floating diffusion region.

3. The image sensor of claim 1 , wherein

the semiconductor substrate further includes a second floating diffusion region, the second floating diffusion region adjacent to the first surface, and

the image sensor further includes

a second storage gate between the second vertical transmission gate and the second floating diffusion region, the second storage gate on the first surface of the semiconductor substrate, and

a second tap transmission gate between the second storage gate and the second floating diffusion region, the second tap transmission gate on the first surface of the semiconductor substrate.

4. The image sensor of claim 1 , further comprising:

a gate insulation layer on the first surface of the semiconductor substrate,

wherein

the first storage gate is on the gate insulation layer, and

a bottom surface of the first storage gate is distal to the second surface of the second surface of the semiconductor substrate in relation to the first surface of the semiconductor substrate.

5. The image sensor of claim 1 , wherein a surface area of the first storage gate along a surface parallel to the first surface of the semiconductor substrate is greater than a surface area of the first vertical transmission gate along the surface parallel to the first surface of the semiconductor substrate.

6. The image sensor of claim 1 , wherein the semiconductor substrate includes

a demodulation region between the first vertical transmission gate and the second vertical transmission gate in a direction parallel to the first surface of the semiconductor substrate; and

a barrier impurity region on the first storage gate and isolated from direct contact with the first surface of the semiconductor substrate, the barrier impurity region associated with a first conductivity type.

7. The image sensor of claim 6 , further comprising:

an overflow gate on the first surface of the semiconductor substrate, the overflow gate connected to one side of the demodulation region.

8. The image sensor of claim 6 , wherein the semiconductor substrate further includes a storage diffusion region between the first surface of the semiconductor substrate and the barrier impurity region, the storage diffusion region associated with a second conductivity type, the second conductivity type different from the first conductivity type.

9. The image sensor of claim 6 , wherein

the barrier impurity region includes a first barrier impurity region and a second barrier impurity region, the first barrier impurity region and the second barrier impurity region isolated from direct contact with each other in the thickness direction of the semiconductor substrate, and

the image sensor further includes an optical shield region between the first barrier impurity region and the second barrier impurity region.

10. The image sensor of claim 1 , wherein the first storage gate extends in the thickness direction of the semiconductor substrate from the first surface of the semiconductor substrate to extend through at least a separate portion of the well region.

11. The image sensor of claim 10 , wherein the semiconductor substrate further includes a barrier impurity region on the first storage gate and isolated from direct contact with a sidewall and a bottom surface of the first storage gate, the barrier impurity region associated with a first conductivity type.

12. The image sensor of claim 10 , further comprising:

a third tap transmission gate between the first storage gate and the first vertical transmission gate and on the first surface of the semiconductor substrate.

13. An image sensor, comprising:

a semiconductor substrate including a first surface and a second surface, the semiconductor substrate further including a demodulation region;

a first vertical transmission gate and a second vertical transmission gate isolated from direct contact with each other, the demodulation region between the first vertical transmission gate and the second vertical transmission gate, the first vertical transmission gate and the second vertical transmission gate each extending in a thickness direction of the semiconductor substrate from the first surface of the semiconductor substrate, the thickness direction being perpendicular to at least one of the first surface and the second surface;

a first storage gate and a second storage gate on the first surface of the semiconductor substrate, the first storage gate adjacent to the first vertical transmission gate, the second storage gate adjacent to the second vertical transmission gate; and

a first tap transmission gate and a second tap transmission gate on the first surface of the semiconductor substrate, the first tap transmission gate adjacent to the first storage gate, the second tap transmission gate adjacent to the second storage gate.

14. The image sensor of claim 13 , wherein

the semiconductor substrate further includes a first floating diffusion region and a second floating diffusion region each adjacent to the first surface of the semiconductor substrate,

the first tap transmission gate is between the first floating diffusion region and the first storage gate, and

the second tap transmission gate is between the second floating diffusion region and the second storage gate.

15. The image sensor of claim 13 , wherein

a surface area of the first storage gate along a surface parallel to the first surface of the semiconductor substrate is greater than a surface area of the first vertical transmission gate along the surface parallel to the first surface of the semiconductor substrate, and

a surface area of the second storage gate along the surface parallel to the first surface of the semiconductor substrate is greater than a surface area of the second vertical transmission gate along the surface parallel to the first surface of the semiconductor substrate.

16. The image sensor of claim 13 , wherein

the semiconductor substrate further includes a well region, the well region adjacent to the first surface, and

the image sensor further includes

a third tap transmission gate between the first storage gate and the first vertical transmission gate and on the first surface of the semiconductor substrate, and

a fourth tap transmission gate between the second storage gate and the second vertical transmission gate and on the first surface of the semiconductor substrate,

wherein the first storage gate and the second storage gate extend in the thickness direction of the semiconductor substrate from the first surface of the semiconductor substrate to extend through at least a portion of the well region.

17. The image sensor of claim 16 , wherein the semiconductor substrate further includes a barrier impurity region on the first storage gate and isolated from direct contact with a sidewall and a bottom surface of the first storage gate, the barrier impurity region associated with a first conductivity type.

18. An image sensor, comprising:

a semiconductor substrate including a first surface and a second surface, the semiconductor substrate further include a demodulation region and a first floating diffusion region, the semiconductor substrate associated with a first conductivity type;

a first vertical transmission gate and a second vertical transmission gate isolated from direct contact with each other, the demodulation region between the first vertical transmission gate and the second vertical transmission gate, the first vertical transmission gate and the second vertical transmission gate each extending in a thickness direction of the semiconductor substrate from the first surface of the semiconductor substrate, the thickness direction being perpendicular to at least one of the first surface and the second surface;

a first storage gate between the first vertical transmission gate and the first floating diffusion region, the first storage gate on the first surface of the semiconductor substrate;

a first tap transmission gate between the first storage gate and the first floating diffusion region, the first tap transmission gate on the first surface of the semiconductor substrate; and

a storage diffusion region in an inner portion of the semiconductor substrate, the storage diffusion region on the first storage gate, the storage diffusion region associated with a second conductivity type, the second conductivity type different from the first conductivity type.

19. The image sensor of claim 18 , further comprising:

a barrier impurity region in the inner portion of the semiconductor substrate, the barrier impurity region on the first storage gate, the barrier impurity region associated with the first conductivity type, the barrier impurity region adjacent to the storage diffusion region.

20. The image sensor of claim 19 , wherein the barrier impurity region overlaps the first storage gate in the thickness direction of the semiconductor substrate.