Semiconductor structure and method
A method of manufacturing a semiconductor device and the semiconductor device are provided in which a plurality of layers with cobalt-zirconium-tantalum are formed over a semiconductor substrate, the plurality of layers are patterned, and multiple dielectric layers and conductive materials are deposited over the CZT material. Another layer of CZT material encapsulates the conductive material.
1. A method of manufacturing a semiconductor device, the method comprising:
depositing a plurality of CZT layers over a semiconductor substrate;
exposing a top surface of each of the plurality of CZT layers using a wet etching process;
forming an inductor coil over and electrically isolated from the CZT layers; and
forming another CZT layer over and electrically isolated from the inductor coil but in electrical connection with the plurality of CZT layers.
2. The method of claim 1 , wherein a width of the top surface of one of the plurality of CZT layers has a width of between about 0.25 μm and about 2 μm.
3. The method of claim 2 , wherein the top surfaces of each of the plurality of CZT layers collectively form a stair step pattern.
4. The method of claim 3 , wherein the stair step pattern is formed with a first angle of between about 5 degrees and 15 degrees.
5. The method of claim 1 , wherein the exposing the top surface leaves a tantalum residue along sidewalls of each of the plurality of CZT layers.
6. The method of claim 5 , further comprising removing the tantalum residue prior to the forming the inductor coil.
7. The method of claim 6 , wherein the removing the tantalum residue comprises performing a plasma treatment process.
8. A method of manufacturing a semiconductor device, the method comprising:
placing a masking layer over a stack of CZT layers over a semiconductor substrate;
recessing two or more of the stack of CZT layers from a sidewall of the masking layer, wherein each of the two or more of the stack of CZT layers are recessed a different distance;
removing residue after the recessing the two or more of the stack of CZT layers;
plating an inductor coil over the stack of CZT layers;
isolating the inductor coil with a dielectric material; and
depositing a final CZT layer over the inductor coil and in contact with the stack of CZT layers.
9. The method of claim 8 , wherein one of the two or more of the stack of CZT layers is recessed between about 5 μm and about 25 μm.
10. The method of claim 9 , wherein the one of the two or more of the stack of CZT layers has a width of between about 100 μm and about 245 μm after the recessing the two or more of the stack of CZT layers.
11. The method of claim 8 , wherein the residue comprises tantalum.
12. The method of claim 8 , wherein the inductor coil has a width of between about 10 μm and about 300 μam.
13. The method of claim 12 , wherein the inductor coil has a thickness of between 5 μm and about 14 μm.
14. The method of claim 8 , wherein a portion of the final CZT layer has a width through the dielectric material of between about 10 μm and about 30 μm.
15. A method of manufacturing a semiconductor device, the method comprising:
etching a first opening and a second opening through a dielectric layer to expose a first CZT layer, the first CZT layer being one of a plurality of CZT layers, each one of the plurality of CZT layers having a different width;
depositing a capping layer over an inductor coil, the inductor coil being located over the dielectric layer; and
after the depositing the capping layer, filling the first opening and the second opening with a second CZT layer.
16. The method of claim 15 , wherein the second CZT layer has a coverage rate of greater than about 75%.
17. The method of claim 15 , wherein the second CZT layer has a second average angle of between about 30 degrees and about 65 degrees as the second CZT layer extends at least partially through the capping layer.
18. The method of claim 15 , wherein the etching the first opening etches through a second dielectric layer, a third dielectric layer, and a fourth dielectric layer.
19. The method of claim 18 , wherein the second dielectric layer is an oxide, the third dielectric layer is a nitride, and the fourth dielectric layer is an oxide.
20. The method of claim 18 , wherein the second dielectric layer is a nitride, the third dielectric layer is an oxide, and the fourth dielectric layer is a nitride.