2T2R binary weight cell with high on/off ratio background
A weight cell and device are herein disclosed. The weight cell includes a first field effect transistor (FET) and a first resistive memory element connected to a drain of the first FET, and a second FET and a second resistive memory element connected to a drain of the second FET. The drain of the first FET is connected to a gate of the second FET and the drain of the second FET is connected to a gate of the first FET.
1. A weight cell, comprising:
a first field effect transistor (FET) and a first resistive memory element connected to a drain of the first FET; and
a second FET and a second resistive memory element connected to a drain of the second FET,
wherein the drain of the first FET is connected to a gate of the second FET and the drain of the second FET is connected to a gate of the first FET, and wherein a source of the first FET is connected to a first output line and a source of the second FET is connected to a second output line.
2. The weight cell of claim 1 , wherein the first FET and the second FET comprise n-type FETs.
3. The weight cell of claim 1 , wherein the first FET and the second FET comprise p-type FETs.
4. The weight cell of claim 1 , wherein the first resistive memory element and the second resistive memory element comprise magneto tunnel junctions (MTJs).
5. The weight cell of claim 1 , wherein the first resistive memory element and the second resistive memory element comprise resistive random access memory (RRAM) elements.
6. The weight cell of claim 1 , wherein the first resistive memory element and the second resistive memory element comprise ferroelectric random access memory (FeRAM) elements.
7. The weight cell of claim 1 , wherein the first resistive memory element and the second resistive memory element comprise pulse code modulation (PCM) memory elements.
8. The weight cell of claim 1 , wherein the first output line comprises a first external connection and the second output line comprises a second external connection.
9. The weight cell of claim 8 , further comprising a third external connection to a lead of the first resistive memory element and a fourth external connection to a lead of the second resistive memory element.
10. The weight cell of claim 1 , further comprising a first external connection to a lead of the first resistive memory element and a second external connection to a lead of the second resistive memory element.
11. The weight cell of claim 10 , wherein the first output line comprises a third external connection and the second output line comprises a fourth external connection.
12. The weight cell of claim 1 , wherein the weight cell produces a logical value based on a conductance of the first resistive memory element and a conductance of the second resistive memory element.
13. A device, comprising:
an array of weight cells, each weight cell including:
a first field effect transistor (FET) and a first resistive memory element connected to a drain of the first FET; and
a second FET and a second resistive memory element connected to a drain of the second FET, the drain of the first FET being connected to a gate of the second FET and the drain of the second FET being connected to a gate of the first FET; and
a processor configured to perform inference with the array of weight cells by:
setting inputs for a row of weight cells from among the array of weight cells according to a logical value of a corresponding neuron; and
reading outputs of a column of weight cells from among the array of weight cells.
14. The device of claim 13 , wherein the processor is further configured to perform inference by measuring a total current from the read outputs and dividing the total current by an output current.
15. The device of claim 13 , wherein the first resistive memory element and the second resistive memory element comprise magneto tunnel junctions (MTJs).
16. The device of claim 13 , wherein the first FETs and the second FETs comprise n-type FETs.
17. A device, comprising:
an array of weight cells, each weight cell including:
a first field effect transistor (FET) and a first resistive memory element connected to a drain of the first FET; and
a second FET and a second resistive memory element connected to a drain of the second FET, the drain of the first FET being connected to a gate of the second FET and the drain of the second FET being connected to a gate of the first FET; and
a processor configured to write to the resistive memory elements according to a direction of a current supplied to the resistive memory elements.
18. The device of claim 17 , wherein the processor is configured to write to the resistive memory elements by fixing voltages input to the weight cell to a write voltage when the direction of the current is down.
19. The device of claim 17 , wherein the processor is configured to write to the resistive memory elements by holding currents output by the weight cell to a write voltage when the direction of the current is up.
20. The device of claim 17 , wherein the first resistive memory element and the second resistive memory element comprise magneto tunnel junctions (MTJs).