Semiconductor device and manufacturing method thereof
A semiconductor device includes a substrate, a first semiconductor fin and a gate stack. The first semiconductor fin is over the substrate and includes a first germanium-containing layer and a second germanium-containing layer over the first germanium-containing layer. The first germanium-containing layer has a germanium atomic percentage higher than a germanium atomic percentage of the second germanium-containing layer. The gate stack is across the first semiconductor fin.
1. A semiconductor device, comprising:
a substrate;
a first semiconductor fin over the substrate and comprising a first germanium-containing layer and a second germanium-containing layer over the first germanium-containing layer, wherein the first germanium-containing layer has a germanium atomic percentage higher than a germanium atomic percentage of the second germanium-containing layer, and the first germanium-containing layer is asymmetric with respect to an axis of the first semiconductor fin; and
a gate stack across the first semiconductor fin.
2. The semiconductor device of claim 1 , wherein the first semiconductor fin further comprises a third germanium-containing layer under the first germanium-containing layer and having a germanium atomic percentage lower than the germanium atomic percentage of the first germanium-containing layer.
3. The semiconductor device of claim 2 , wherein a germanium atomic percentage difference between the first and second germanium-containing layers is greater than a germanium atomic percentage difference between the second and third germanium-containing layers.
4. The semiconductor device of claim 2 , wherein a germanium atomic percentage difference between the first and third germanium-containing layers is greater than a germanium atomic percentage difference between the second and third germanium-containing layers.
5. The semiconductor device of claim 2 , wherein the germanium atomic percentage of the second germanium-containing layer is substantially the same as the germanium atomic percentage of the third germanium-containing layer.
6. The semiconductor device of claim 2 , wherein an interface between the first and third germanium-containing layers is on a (111) plane.
7. The semiconductor device of claim 1 , wherein an interface between the first and second germanium-containing layers is on a (111) plane.
8. The semiconductor device of claim 1 , further comprising:
a second semiconductor fin over the substrate, wherein the second semiconductor fin has a top end in a position higher than a top end of an interface between the first and second germanium-containing layers.
9. The semiconductor device of claim 8 , further comprising:
a dielectric layer between the second semiconductor fin and the substrate.
10. The semiconductor device of claim 9 , wherein an interface between the dielectric layer and the second semiconductor fin is in a position lower than a bottom end of the interface between the first and second germanium-containing layers.
11. A semiconductor device, comprising:
a substrate;
a first semiconductor fin protruding above the substrate, the first semiconductor fin comprising a first germanium-containing layer and a second germanium-containing layer having a germanium atomic percentage lower than a germanium atomic percentage of the first germanium-containing layer; and
a p-type epitaxy region wrapping around three sides of the first semiconductor fin, the second germanium-containing layer being between the p-type epitaxy region and the first germanium-containing layer.
12. The semiconductor device of claim 11 , further comprising:
a second semiconductor fin protruding above the substrate and having a germanium atomic percentage lower than the germanium atomic percentage of the first germanium-containing layer of the first semiconductor fin.
13. The semiconductor device of claim 12 , wherein the germanium atomic percentage of the second semiconductor fin is substantially the same as the germanium atomic percentage of the second germanium-containing layer of the first semiconductor fin.
14. The semiconductor device of claim 12 , further comprising:
a third semiconductor fin protruding above the substrate and free of germanium.
15. The semiconductor device of claim 11 , wherein the p-type epitaxy region is interfaced with the first and second germanium-containing layers.
16. The semiconductor device of claim 11 , wherein the first semiconductor fin further comprises a third germanium-containing layer between the first germanium-containing layer and the substrate, and the third germanium-containing layer has a germanium atomic percentage lower than the germanium atomic percentage of the first germanium-containing layer.
17. The semiconductor device of claim 16 , wherein the germanium atomic percentage of the second germanium-containing layer is substantially the same as the germanium atomic percentage of the third germanium-containing layer.
18. A method, comprising:
etching a hybrid substrate to form a recess extending into the hybrid substrate, wherein the hybrid substrate comprises a first semiconductor layer having a first surface orientation, a dielectric layer over the first semiconductor layer, and a second semiconductor layer having a second surface orientation different from the first surface orientation, wherein after the etching, a top surface of the first semiconductor layer is exposed to the recess;
forming a spacer on a sidewall of the recess;
performing a first epitaxy process to grow a first germanium-containing layer from the exposed top surface of the first semiconductor layer;
performing a second epitaxy process to grow a second germanium-containing layer from the first germanium-containing layer, wherein a flow rate of a germanium-containing gas used in the second epitaxy process is less than a flow rate of a germanium-containing gas used in the first epitaxy process; and
patterning the first and second germanium-containing layers to form a fin.
19. The method of claim 18 , wherein the first epitaxy process is performed such that the first germanium-containing layer comprises a first portion grown from the first semiconductor layer and a second portion grown from a facet of the first portion, the facet is on a (111) plane, and the second portion has a germanium atomic percentage higher than a germanium atomic percentage of the first portion.
20. The method of claim 19 , wherein the second epitaxy process is performed such that at least a portion of the second germanium-containing layer is grown from the second portion.